Microsemi Corporation JANTX2N3421S
- Part Number:
- JANTX2N3421S
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466332-JANTX2N3421S
- Description:
- TRANS NPN 80V 3A TO39
- Datasheet:
- JANTX2N3421S
Microsemi Corporation JANTX2N3421S technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N3421S.
- Lifecycle StatusIN PRODUCTION (Last Updated: 4 weeks ago)
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/393
- Published2007
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Max Power Dissipation1W
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Pin Count2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation1W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current3A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 1A 2V
- Current - Collector Cutoff (Max)5μA
- Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
- Collector Base Voltage (VCBO)125V
- Emitter Base Voltage (VEBO)8V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
JANTX2N3421S Overview
In this device, the DC current gain is 40 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.With the emitter base voltage set at 8V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
JANTX2N3421S Features
the DC current gain for this device is 40 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 8V
JANTX2N3421S Applications
There are a lot of Microsemi Corporation
JANTX2N3421S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 40 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.With the emitter base voltage set at 8V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
JANTX2N3421S Features
the DC current gain for this device is 40 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 8V
JANTX2N3421S Applications
There are a lot of Microsemi Corporation
JANTX2N3421S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N3421S More Descriptions
Trans GP BJT NPN 80V 3A 1000mW 3-Pin TO-39 Bag
Power Bjt To-39 Rohs Compliant: Yes |Microchip JANTX2N3421S
NPN MEDIUM POWER SILICON TRANSISTOR TO-39
Power Bjt To-39 Rohs Compliant: Yes |Microchip JANTX2N3421S
NPN MEDIUM POWER SILICON TRANSISTOR TO-39
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