JANTX2N3421S

Microsemi Corporation JANTX2N3421S

Part Number:
JANTX2N3421S
Manufacturer:
Microsemi Corporation
Ventron No:
2466332-JANTX2N3421S
Description:
TRANS NPN 80V 3A TO39
ECAD Model:
Datasheet:
JANTX2N3421S

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Specifications
Microsemi Corporation JANTX2N3421S technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N3421S.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 4 weeks ago)
  • Factory Lead Time
    20 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AD, TO-39-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/393
  • Published
    2007
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    1W
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    2
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    1W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    3A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 1A 2V
  • Current - Collector Cutoff (Max)
    5μA
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 200mA, 2A
  • Collector Base Voltage (VCBO)
    125V
  • Emitter Base Voltage (VEBO)
    8V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANTX2N3421S Overview
In this device, the DC current gain is 40 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.With the emitter base voltage set at 8V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

JANTX2N3421S Features
the DC current gain for this device is 40 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 8V


JANTX2N3421S Applications
There are a lot of Microsemi Corporation
JANTX2N3421S applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N3421S More Descriptions
Trans GP BJT NPN 80V 3A 1000mW 3-Pin TO-39 Bag
Power Bjt To-39 Rohs Compliant: Yes |Microchip JANTX2N3421S
NPN MEDIUM POWER SILICON TRANSISTOR TO-39
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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