JANTX2N2906AUB

Microsemi Corporation JANTX2N2906AUB

Part Number:
JANTX2N2906AUB
Manufacturer:
Microsemi Corporation
Ventron No:
3069102-JANTX2N2906AUB
Description:
TRANS PNP 60V 0.6A
ECAD Model:
Datasheet:
MIL-PRF-19500/291Y w/Amendment 1 Specification

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Specifications
Microsemi Corporation JANTX2N2906AUB technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N2906AUB.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    23 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    3-SMD, No Lead
  • Number of Pins
    3
  • Supplier Device Package
    UB
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/291
  • Published
    2007
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    200°C
  • Min Operating Temperature
    -65°C
  • Max Power Dissipation
    500mW
  • Number of Elements
    1
  • Polarity
    PNP
  • Power Dissipation
    400mW
  • Power - Max
    500mW
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    600mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    50nA
  • Vce Saturation (Max) @ Ib, Ic
    1.6V @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    60V
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Current - Collector (Ic) (Max)
    600mA
  • Collector Base Voltage (VCBO)
    60V
  • Emitter Base Voltage (VEBO)
    5V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
JANTX2N2906AUB Overview
In this device, the DC current gain is 40 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Product comes in the supplier's device package UB.There is a 60V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.

JANTX2N2906AUB Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of UB


JANTX2N2906AUB Applications
There are a lot of Microsemi Corporation
JANTX2N2906AUB applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N2906AUB More Descriptions
Non-Compliant Surface Mount PNP Contains Lead SMD/SMT 3 Production (Last Updated: 2 months ago)
Trans GP BJT PNP 60V 0.6A 500mW 4-Pin Case UB Waffle
Small-Signal BJT _ UB
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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