Microsemi Corporation JANTX2N2906AUB
- Part Number:
- JANTX2N2906AUB
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3069102-JANTX2N2906AUB
- Description:
- TRANS PNP 60V 0.6A
Microsemi Corporation JANTX2N2906AUB technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N2906AUB.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time23 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-SMD, No Lead
- Number of Pins3
- Supplier Device PackageUB
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/291
- Published2007
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature200°C
- Min Operating Temperature-65°C
- Max Power Dissipation500mW
- Number of Elements1
- PolarityPNP
- Power Dissipation400mW
- Power - Max500mW
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 10V
- Current - Collector Cutoff (Max)50nA
- Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage60V
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)600mA
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
JANTX2N2906AUB Overview
In this device, the DC current gain is 40 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Product comes in the supplier's device package UB.There is a 60V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
JANTX2N2906AUB Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of UB
JANTX2N2906AUB Applications
There are a lot of Microsemi Corporation
JANTX2N2906AUB applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 40 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Product comes in the supplier's device package UB.There is a 60V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
JANTX2N2906AUB Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of UB
JANTX2N2906AUB Applications
There are a lot of Microsemi Corporation
JANTX2N2906AUB applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N2906AUB More Descriptions
Non-Compliant Surface Mount PNP Contains Lead SMD/SMT 3 Production (Last Updated: 2 months ago)
Trans GP BJT PNP 60V 0.6A 500mW 4-Pin Case UB Waffle
Small-Signal BJT _ UB
Trans GP BJT PNP 60V 0.6A 500mW 4-Pin Case UB Waffle
Small-Signal BJT _ UB
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