Microsemi Corporation JANTX2N2222AUB
- Part Number:
- JANTX2N2222AUB
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466792-JANTX2N2222AUB
- Description:
- TRANS NPN 50V 0.8A
- ECAD Model:
-
Microsemi Corporation JANTX2N2222AUB technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N2222AUB.
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-SMD, No Lead
- Number of Pins3
- Supplier Device PackageUB
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/255
- Published1996
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature200°C
- Min Operating Temperature-65°C
- Max Power Dissipation500mW
- Number of Elements1
- PolarityNPN
- Power Dissipation500mW
- Power - Max500mW
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)50nA
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage50V
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)800mA
- Collector Base Voltage (VCBO)75V
- Emitter Base Voltage (VEBO)6V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
JANTX2N2222AUB Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Supplier device package UB comes with the product.The device exhibits a collector-emitter breakdown at 50V.Maximum collector currents can be below 800mA volts.
JANTX2N2222AUB Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of UB
JANTX2N2222AUB Applications
There are a lot of Microsemi Corporation
JANTX2N2222AUB applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Supplier device package UB comes with the product.The device exhibits a collector-emitter breakdown at 50V.Maximum collector currents can be below 800mA volts.
JANTX2N2222AUB Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of UB
JANTX2N2222AUB Applications
There are a lot of Microsemi Corporation
JANTX2N2222AUB applications of single BJT transistors.
Inverter
Interface
Driver
Muting
JANTX2N2222AUB More Descriptions
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
JANTX Series 50 V 800 mA 500 mW SMT NPN Switching Transistor - UB-3
Trans GP BJT NPN 50V 0.8A 500mW 4-Pin Case UB Waffle
JANTX Series 50 V 800 mA 500 mW SMT NPN Switching Transistor - UB-3
Trans GP BJT NPN 50V 0.8A 500mW 4-Pin Case UB Waffle
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