Microsemi Corporation JANTX2N2222A

JANTX2N2222A Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.This product comes in a TO-218 device package from the supplier.Device displays Collector Emitter Breakdown (50V maximal voltage).Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.

JANTX2N2222A Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-218


JANTX2N2222A Applications
There are a lot of Microsemi Corporation
JANTX2N2222A applications of single BJT transistors.


Inverter
Interface
Driver
Muting