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JANTX2N1711S

Microsemi Corporation JANTX2N1711S

Part Number:
JANTX2N1711S
Manufacturer:
Microsemi Corporation
Ventron No:
3585287-JANTX2N1711S
Description:
TRANS NPN 30V 0.5A TO-39
ECAD Model:
Datasheet:
JANTX2N1711S

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Specifications
Microsemi Corporation JANTX2N1711S technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N1711S.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AD, TO-39-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/225
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    800mW
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    3
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    800mW
  • Case Connection
    COLLECTOR
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    30V
  • Max Collector Current
    500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    10nA ICBO
  • JEDEC-95 Code
    TO-5
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 15mA, 150mA
  • Transition Frequency
    70MHz
  • Collector Base Voltage (VCBO)
    75V
  • Emitter Base Voltage (VEBO)
    7V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANTX2N1711S Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 15mA, 150mA.Keeping the emitter base voltage at 7V allows for a high level of efficiency.70MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.

JANTX2N1711S Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
the emitter base voltage is kept at 7V
a transition frequency of 70MHz


JANTX2N1711S Applications
There are a lot of Microsemi Corporation
JANTX2N1711S applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANTX2N1711S More Descriptions
Trans GP BJT NPN 30V 0.5A 800mW 3-Pin TO-5 Bag
Compliant Through Hole NPN TO-5 3 Production (Last Updated: 1 month ago) 800 mW
Power BJT _ TO-39
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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