JANS2N2907A

Microsemi Corporation JANS2N2907A

Part Number:
JANS2N2907A
Manufacturer:
Microsemi Corporation
Ventron No:
2464814-JANS2N2907A
Description:
TRANS PNP 60V 0.6A TO18
ECAD Model:
Datasheet:
MIL-PRF-19500/291Y w/Amendment 1 Specification

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Specifications
Microsemi Corporation JANS2N2907A technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANS2N2907A.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 3 weeks ago)
  • Factory Lead Time
    33 Weeks
  • Contact Plating
    Lead, Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-206AA, TO-18-3 Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~200°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/291
  • Published
    2007
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • HTS Code
    8541.21.00.95
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    400mW
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Pin Count
    3
  • Reference Standard
    MIL-19500/291
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Case Connection
    COLLECTOR
  • Power - Max
    500mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    600mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA 10V
  • Current - Collector Cutoff (Max)
    50nA
  • Vce Saturation (Max) @ Ib, Ic
    1.6V @ 50mA, 500mA
  • Transition Frequency
    200MHz
  • Collector Base Voltage (VCBO)
    60V
  • Turn On Time-Max (ton)
    45ns
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
JANS2N2907A Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.6V @ 50mA, 500mA.As a result, the part has a transition frequency of 200MHz.In extreme cases, the collector current can be as low as 600mA volts.

JANS2N2907A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
a transition frequency of 200MHz


JANS2N2907A Applications
There are a lot of Microsemi Corporation
JANS2N2907A applications of single BJT transistors.


Inverter
Interface
Driver
Muting
JANS2N2907A More Descriptions
Trans GP BJT PNP 60V 600mA 3-Pin TO-18 Tray
Small-Signal BJT _ TO-18
TRANS PNP 60V 0.6A TO206AA
TRANS PNP 60V 0.6A TO18
OEMs, CMs ONLY (NO BROKERS)
JANS2N2907A --
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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