IXYS IXGN60N60C2D1
- Part Number:
- IXGN60N60C2D1
- Manufacturer:
- IXYS
- Ventron No:
- 3072029-IXGN60N60C2D1
- Description:
- IGBT 600V 75A SOT-227B
- ECAD Model:
-
- Datasheet:
- IXGN60N60C2D1
IXYS IXGN60N60C2D1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGN60N60C2D1.
- MountChassis Mount, Screw
- Mounting TypeChassis Mount
- Package / CaseSOT-227-4, miniBLOC
- Number of Pins4
- Weight38.000013g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- SeriesHiPerFAST™
- Published2004
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- Terminal FinishNickel (Ni)
- Additional FeatureLOW CONDUCTION LOSS, UL RECOGNIZED
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation480W
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- Base Part NumberIXG*60N60
- Pin Count4
- Number of Elements1
- ConfigurationSingle
- Case ConnectionISOLATED
- Turn On Delay Time18 ns
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- InputStandard
- Turn-Off Delay Time95 ns
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current100A
- Current - Collector Cutoff (Max)650μA
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2.5V
- Input Capacitance4.75nF
- Turn On Time43 ns
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 50A
- Continuous Collector Current75A
- Turn Off Time-Nom (toff)210 ns
- IGBT TypePT
- NTC ThermistorNo
- Gate-Emitter Voltage-Max20V
- Input Capacitance (Cies) @ Vce4.75nF @ 25V
- Height9.6mm
- Length38.2mm
- Width25.07mm
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IXGN60N60C2D1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet IXGN60N60C2D1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGN60N60C2D1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet IXGN60N60C2D1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGN60N60C2D1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGN60N60C2D1 More Descriptions
IGBT 600V 75A SOT-227B
IXYS Power Transistor Module
HiPerFASTTM IGBTs with Diode
IGBT MOD 600V 75A 480W SOT227B
Contact for details
IXYS Power Transistor Module
HiPerFASTTM IGBTs with Diode
IGBT MOD 600V 75A 480W SOT227B
Contact for details
The three parts on the right have similar specifications to IXGN60N60C2D1.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperatureSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureSubcategoryMax Power DissipationTerminal PositionTerminal FormBase Part NumberPin CountNumber of ElementsConfigurationCase ConnectionTurn On Delay TimeTransistor ApplicationPolarity/Channel TypeInputTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentCurrent - Collector Cutoff (Max)Collector Emitter Breakdown VoltageCollector Emitter Saturation VoltageInput CapacitanceTurn On TimeVce(on) (Max) @ Vge, IcContinuous Collector CurrentTurn Off Time-Nom (toff)IGBT TypeNTC ThermistorGate-Emitter Voltage-MaxInput Capacitance (Cies) @ VceHeightLengthWidthRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max)Factory Lead TimePower DissipationPower - MaxView Compare
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IXGN60N60C2D1Chassis Mount, ScrewChassis MountSOT-227-4, miniBLOC438.000013gSILICON-55°C~150°C TJHiPerFAST™2004yesObsolete1 (Unlimited)4Nickel (Ni)LOW CONDUCTION LOSS, UL RECOGNIZEDInsulated Gate BIP Transistors480WUPPERUNSPECIFIEDIXG*60N6041SingleISOLATED18 nsPOWER CONTROLN-CHANNELStandard95 ns600V100A650μA600V2.5V4.75nF43 ns2.5V @ 15V, 50A75A210 nsPTNo20V4.75nF @ 25V9.6mm38.2mm25.07mmRoHS CompliantLead Free----- -
Chassis MountChassis MountSOT-227-4, miniBLOC-------Obsolete1 (Unlimited)----------Single----Standard--160A-1.2kV-------No-----RoHS Compliant-1200V---
-
Chassis Mount, ScrewChassis MountSOT-227-4, miniBLOC4-SILICON-55°C~150°C TJGenX3™2008yesActive1 (Unlimited)4Nickel (Ni)UL RECOGNIZED, LOW CONDUCTION LOSS-360WUPPERUNSPECIFIEDIXG*72N6041SingleISOLATED-POWER CONTROLN-CHANNELStandard-600V160A75μA600V1.35V6.6nF61 ns1.35V @ 15V, 60A-885 nsPTNo-6.6nF @ 25V---ROHS3 CompliantLead Free-30 Weeks360W-
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Chassis Mount, ScrewChassis MountSOT-227-4, miniBLOC438.000013gSILICON-55°C~150°C TJ-2004yesObsolete1 (Unlimited)4Nickel (Ni)UL RECOGNIZED-625WUPPERSOLDER LUG-41SingleISOLATED-POWER CONTROLN-CHANNELStandard-600V160A650μA600V1.35V--1.35V @ 15V, 80A---No-----RoHS Compliant----625W
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