IXDN602SI

IXYS Integrated Circuits Division IXDN602SI

Part Number:
IXDN602SI
Manufacturer:
IXYS Integrated Circuits Division
Ventron No:
3838015-IXDN602SI
Description:
MOSFET N-CH 2A DUAL LO SIDE 8-SO
ECAD Model:
Datasheet:
IXDN602SI

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Specifications
IXYS Integrated Circuits Division IXDN602SI technical specifications, attributes, parameters and parts with similar specifications to IXYS Integrated Circuits Division IXDN602SI.
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width) Exposed Pad
  • Number of Pins
    8
  • Supplier Device Package
    8-SOIC-EP
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2004
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    125°C
  • Min Operating Temperature
    -40°C
  • Voltage - Supply
    4.5V~35V
  • Number of Outputs
    2
  • Max Output Current
    2A
  • Number of Channels
    2
  • Max Supply Voltage
    35V
  • Min Supply Voltage
    4.5V
  • Propagation Delay
    60 ns
  • Input Type
    Non-Inverting
  • Turn On Delay Time
    60 ns
  • Rise Time
    15ns
  • Fall Time (Typ)
    15 ns
  • Rise / Fall Time (Typ)
    7.5ns 6.5ns
  • Channel Type
    Independent
  • Number of Drivers
    2
  • Driven Configuration
    Low-Side
  • Gate Type
    IGBT, N-Channel, P-Channel MOSFET
  • Current - Peak Output (Source, Sink)
    2A 2A
  • Logic Voltage - VIL, VIH
    0.8V 3V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IXDN602SI Overview
The Mount is a Surface Mount, meaning it is designed to be mounted directly onto a surface. Its Part Status is Active, indicating that it is currently in production and available for purchase. The Max Operating Temperature is 125°C, meaning it can withstand high temperatures without malfunctioning. The Turn On Delay Time is 60 ns, indicating the time it takes for the device to turn on after receiving a signal. Its Fall Time (Typ) is 15 ns and its Rise / Fall Time (Typ) is 7.5ns 6.5ns, both of which refer to the speed at which the device can switch between on and off states. The Number of Drivers is 2, meaning it can control two separate outputs. Its Gate Type is IGBT, N-Channel, P-Channel MOSFET, indicating the type of transistors used in the device. The Current - Peak Output (Source, Sink) is 2A 2A, meaning it can handle a maximum output current of 2A for both sourcing and sinking. Finally, the Logic Voltage - VIL, VIH is 0.8V 3V, indicating the voltage levels for the device's input signals.

IXDN602SI Features
Embedded in the Tube package
2 drivers
Employing a gate type of IGBT, N-Channel, P-Channel MOSFET
8 pins

IXDN602SI Applications
There are a lot of IXYS Integrated Circuits Division IXDN602SI gate drivers applications.

High-speed communications
Solar inverters
Broadcast equipment
Isolated Supplies for Motor Control
Portable computers
Welding
Commercial and agricultural vehicles (CAV)
Portable Media Players
Commercial air-conditioning (CAC)
High current laser/LED systems
IXDN602SI More Descriptions
IXDN Series 35 V 2 A 2.5 Ohm Low-Side Ultrafast MOSFET Drivers - SOIC-8
Dual Hi Spd Non-Invrtng Drvr 2A Exp Pad/Tube |Littelfuse IXDN602SI
IC GATE DRVR LOW-SIDE 8SOIC
MOSFET DR DUAL UF 2A SOIC8
2-AMP DUAL LS U-FST DR 8-LD T
Product Comparison
The three parts on the right have similar specifications to IXDN602SI.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Supply
    Number of Outputs
    Max Output Current
    Number of Channels
    Max Supply Voltage
    Min Supply Voltage
    Propagation Delay
    Input Type
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Rise / Fall Time (Typ)
    Channel Type
    Number of Drivers
    Driven Configuration
    Gate Type
    Current - Peak Output (Source, Sink)
    Logic Voltage - VIL, VIH
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Number of Terminations
    ECCN Code
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Power Supplies
    Nominal Supply Current
    Interface IC Type
    Turn On Time
    Output Peak Current Limit-Nom
    High Side Driver
    Turn Off Time
    Height Seated (Max)
    Length
    Width
    Weight
    JESD-609 Code
    Terminal Finish
    Terminal Pitch
    Output Current
    View Compare
  • IXDN602SI
    IXDN602SI
    8 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width) Exposed Pad
    8
    8-SOIC-EP
    -55°C~150°C TJ
    Tube
    2004
    Active
    1 (Unlimited)
    125°C
    -40°C
    4.5V~35V
    2
    2A
    2
    35V
    4.5V
    60 ns
    Non-Inverting
    60 ns
    15ns
    15 ns
    7.5ns 6.5ns
    Independent
    2
    Low-Side
    IGBT, N-Channel, P-Channel MOSFET
    2A 2A
    0.8V 3V
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXDN509D1T/R
    -
    -
    Surface Mount
    6-VDFN Exposed Pad
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2007
    Obsolete
    1 (Unlimited)
    -
    -
    4.5V~30V
    -
    -
    -
    -
    -
    -
    Non-Inverting
    -
    45ns
    40 ns
    25ns 23ns
    Single
    1
    Low-Side
    IGBT, N-Channel, P-Channel MOSFET
    9A 9A
    0.8V 2.4V
    -
    RoHS Compliant
    -
    YES
    6
    EAR99
    MOSFET Drivers
    CMOS
    DUAL
    NO LEAD
    NOT SPECIFIED
    1
    18V
    NOT SPECIFIED
    IXD*509
    6
    R-PDSO-N6
    Not Qualified
    4.5/30V
    75mA
    BUFFER OR INVERTER BASED MOSFET DRIVER
    0.055 µs
    9A
    NO
    0.04 µs
    0.95mm
    5mm
    3.99mm
    -
    -
    -
    -
    -
  • IXDN509SIA
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -55°C~150°C TJ
    Tube
    2007
    Obsolete
    1 (Unlimited)
    -
    -
    4.5V~30V
    -
    9A
    -
    -
    -
    -
    Non-Inverting
    -
    45ns
    40 ns
    25ns 23ns
    Single
    1
    Low-Side
    IGBT, N-Channel, P-Channel MOSFET
    9A 9A
    0.8V 2.4V
    -
    RoHS Compliant
    Lead Free
    -
    8
    EAR99
    MOSFET Drivers
    CMOS
    DUAL
    GULL WING
    NOT SPECIFIED
    1
    18V
    NOT SPECIFIED
    IXD*509
    8
    R-PDSO-G8
    Not Qualified
    4.5/30V
    75mA
    BUFFER OR INVERTER BASED MOSFET DRIVER
    0.055 μs
    9A
    NO
    0.04 μs
    -
    4.9mm
    3.9mm
    449.991981mg
    -
    -
    -
    -
  • IXDN409PI
    -
    Through Hole
    Through Hole
    8-DIP (0.300, 7.62mm)
    8
    -
    -55°C~150°C TJ
    Tube
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    4.5V~35V
    -
    9A
    -
    -
    -
    40 ns
    Non-Inverting
    40 ps
    15ns
    15 ns
    10ns 10ns
    Single
    1
    Low-Side
    IGBT, N-Channel, P-Channel MOSFET
    9A 9A
    0.8V 3.5V
    -
    RoHS Compliant
    Lead Free
    -
    8
    EAR99
    -
    -
    DUAL
    -
    260
    1
    18V
    35
    IXD*409
    8
    -
    Not Qualified
    -
    3mA
    BUFFER OR INVERTER BASED MOSFET DRIVER
    0.04 µs
    9A
    NO
    0.036 µs
    4.57mm
    9.59mm
    7.62mm
    599.989307mg
    e3
    Matte Tin (Sn)
    2.54mm
    9A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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