IXYS IXDN414PI technical specifications, attributes, parameters and parts with similar specifications to IXYS IXDN414PI.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / Case8-DIP (0.300, 7.62mm)
- Number of Pins8
- Weight599.989307mg
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2004
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Max Power Dissipation833mW
- Voltage - Supply4.5V~35V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage18V
- Terminal Pitch2.54mm
- Reflow Temperature-Max (s)35
- Base Part NumberIXD*414
- Pin Count8
- Qualification StatusNot Qualified
- Operating Supply Voltage35V
- Nominal Supply Current3mA
- Output Current14A
- Input TypeNon-Inverting
- Rise Time27ns
- Fall Time (Typ)25 ns
- Rise / Fall Time (Typ)22ns 20ns
- Interface IC TypeBUFFER OR INVERTER BASED PERIPHERAL DRIVER
- Channel TypeSingle
- Number of Drivers1
- Turn On Time0.033 µs
- Output Peak Current Limit-Nom14A
- Driven ConfigurationLow-Side
- Gate TypeIGBT, N-Channel, P-Channel MOSFET
- Current - Peak Output (Source, Sink)14A 14A
- Logic Voltage - VIL, VIH0.8V 3.5V
- Turn Off Time0.034 µs
- Height Seated (Max)4.57mm
- Length9.59mm
- Width7.62mm
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IXDN414PI Overview
The product has a weight of 599.989307mg and an operating temperature range of -55°C to 150°C TJ. It was published in 2004 and has a JESD-609 Code of e3. The part status is obsolete and the terminal finish is matte tin (Sn). The fall time (typical) is 25 ns and it is an interface IC type of BUFFER OR INVERTER BASED PERIPHERAL DRIVER. The turn off time is 0.034 µs and it has a length of 9.59mm.
IXDN414PI Features
Embedded in the Tube package
1 drivers
Employing a gate type of IGBT, N-Channel, P-Channel MOSFET
8 pins
Maximum power dissipation of 833mW
IXDN414PI Applications
There are a lot of IXYS IXDN414PI gate drivers applications.
Dual-Battery Systems
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
Automotive Applications
High power buffers
Pulse transformer drivers
Isolated Supplies for controller area network (CAN),
Topologies
DC-DC Converters
Solar inverters
Active filtering
The product has a weight of 599.989307mg and an operating temperature range of -55°C to 150°C TJ. It was published in 2004 and has a JESD-609 Code of e3. The part status is obsolete and the terminal finish is matte tin (Sn). The fall time (typical) is 25 ns and it is an interface IC type of BUFFER OR INVERTER BASED PERIPHERAL DRIVER. The turn off time is 0.034 µs and it has a length of 9.59mm.
IXDN414PI Features
Embedded in the Tube package
1 drivers
Employing a gate type of IGBT, N-Channel, P-Channel MOSFET
8 pins
Maximum power dissipation of 833mW
IXDN414PI Applications
There are a lot of IXYS IXDN414PI gate drivers applications.
Dual-Battery Systems
Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
Automotive Applications
High power buffers
Pulse transformer drivers
Isolated Supplies for controller area network (CAN),
Topologies
DC-DC Converters
Solar inverters
Active filtering
IXDN414PI More Descriptions
IC DRIVER MOSF/IGBT 14A 8-DIP
IC GATE DRVR LOW-SIDE 8DIP
new, original packaged
Power Integrated Ics
Contact for details
IC GATE DRVR LOW-SIDE 8DIP
new, original packaged
Power Integrated Ics
Contact for details
The three parts on the right have similar specifications to IXDN414PI.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Power DissipationVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberPin CountQualification StatusOperating Supply VoltageNominal Supply CurrentOutput CurrentInput TypeRise TimeFall Time (Typ)Rise / Fall Time (Typ)Interface IC TypeChannel TypeNumber of DriversTurn On TimeOutput Peak Current Limit-NomDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)Logic Voltage - VIL, VIHTurn Off TimeHeight Seated (Max)LengthWidthRoHS StatusLead FreeTechnologyTerminal FormMax Output CurrentTurn On Delay TimeTurn-Off Delay TimeBuilt-in ProtectionsSubcategoryPower SuppliesHigh Side DriverPropagation DelayView Compare
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IXDN414PIThrough HoleThrough Hole8-DIP (0.300, 7.62mm)8599.989307mg-55°C~150°C TJTube2004e3Obsolete1 (Unlimited)8EAR99Matte Tin (Sn)833mW4.5V~35VDUAL260118V2.54mm35IXD*4148Not Qualified35V3mA14ANon-Inverting27ns25 ns22ns 20nsBUFFER OR INVERTER BASED PERIPHERAL DRIVERSingle10.033 µs14ALow-SideIGBT, N-Channel, P-Channel MOSFET14A 14A0.8V 3.5V0.034 µs4.57mm9.59mm7.62mmRoHS CompliantLead Free-----------
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Surface MountSurface Mount16-SOIC (0.295, 7.50mm Width)16550.009098mg-55°C~150°C TJTube2004-Obsolete1 (Unlimited)16EAR99--4.5V~35VDUALNOT SPECIFIED218V-NOT SPECIFIEDIXD*40416Not Qualified-3mA4ANon-Inverting18ns17 ns16ns 13nsBUFFER OR INVERTER BASED PERIPHERAL DRIVERIndependent20.06 μs4ALow-SideIGBT, N-Channel, P-Channel MOSFET4A 4A0.8V 2.5V0.059 μs-10.3mm7.5mmRoHS CompliantContains LeadMOSGULL WING4A40 ns39 nsOVER CURRENT----
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Surface MountSurface Mount6-VDFN Exposed Pad6--55°C~150°C TJBulk2007-Obsolete1 (Unlimited)6EAR99--4.5V~30VDUALNOT SPECIFIED118V-NOT SPECIFIEDIXD*5096Not Qualified-75mA-Non-Inverting45ns40 ns25ns 23nsBUFFER OR INVERTER BASED MOSFET DRIVERSingle10.055 µs9ALow-SideIGBT, N-Channel, P-Channel MOSFET9A 9A0.8V 2.4V0.04 µs0.95mm5mm3.99mmRoHS Compliant-CMOSNO LEAD----MOSFET Drivers4.5/30VNO-
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Through HoleThrough Hole8-DIP (0.300, 7.62mm)8599.989307mg-55°C~150°C TJTube2004e3Obsolete1 (Unlimited)8EAR99Matte Tin (Sn)-4.5V~35VDUAL260118V2.54mm35IXD*4098Not Qualified-3mA9ANon-Inverting15ns15 ns10ns 10nsBUFFER OR INVERTER BASED MOSFET DRIVERSingle10.04 µs9ALow-SideIGBT, N-Channel, P-Channel MOSFET9A 9A0.8V 3.5V0.036 µs4.57mm9.59mm7.62mmRoHS CompliantLead Free--9A40 ps----NO40 ns
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