IXYS IXDN509SIA
- Part Number:
- IXDN509SIA
- Manufacturer:
- IXYS
- Ventron No:
- 3736608-IXDN509SIA
- Description:
- IC GATE DRIVER SGL 9A 8-SOIC
- Datasheet:
- IXDN509SIA
IXYS IXDN509SIA technical specifications, attributes, parameters and parts with similar specifications to IXYS IXDN509SIA.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Weight449.991981mg
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2007
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- SubcategoryMOSFET Drivers
- TechnologyCMOS
- Voltage - Supply4.5V~30V
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage18V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberIXD*509
- Pin Count8
- JESD-30 CodeR-PDSO-G8
- Qualification StatusNot Qualified
- Max Output Current9A
- Power Supplies4.5/30V
- Nominal Supply Current75mA
- Input TypeNon-Inverting
- Rise Time45ns
- Fall Time (Typ)40 ns
- Rise / Fall Time (Typ)25ns 23ns
- Interface IC TypeBUFFER OR INVERTER BASED MOSFET DRIVER
- Channel TypeSingle
- Number of Drivers1
- Turn On Time0.055 μs
- Output Peak Current Limit-Nom9A
- Driven ConfigurationLow-Side
- Gate TypeIGBT, N-Channel, P-Channel MOSFET
- Current - Peak Output (Source, Sink)9A 9A
- High Side DriverNO
- Logic Voltage - VIL, VIH0.8V 2.4V
- Turn Off Time0.04 μs
- Length4.9mm
- Width3.9mm
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IXDN509SIA Overview
The packaging for this electronic component is a tube, making it easy to store and transport. However, it is important to note that the part status is now obsolete, meaning it is no longer in production. The terminal position is dual, allowing for two connections to be made to the device. The JESD-30 code for this component is R-PDSO-G8, indicating its size and shape. It requires power supplies of 4.5/30V and has a turn on time of 0.055 μs. The output peak current limit-nom is 9A, making it suitable for a variety of applications. Its driven configuration is low-side, and it uses IGBT, N-channel, and P-channel MOSFETs. With a length of 4.9mm, this component is compact and versatile.
IXDN509SIA Features
Embedded in the Tube package
1 drivers
Employing a gate type of IGBT, N-Channel, P-Channel MOSFET
IXDN509SIA Applications
There are a lot of IXYS IXDN509SIA gate drivers applications.
Video amplifiers
Active Clamp Flyback or Forward and Synchronous Rectifier
Industrial Power Supplies
Industrial Motor Inverter - Power Tools, Robotics
Uninterruptible Power Supplies (UPS)
Multicolor LED/laser displays
Portable Navigation Devices
A/D drivers
Smart Phones
Dual-Battery Systems
The packaging for this electronic component is a tube, making it easy to store and transport. However, it is important to note that the part status is now obsolete, meaning it is no longer in production. The terminal position is dual, allowing for two connections to be made to the device. The JESD-30 code for this component is R-PDSO-G8, indicating its size and shape. It requires power supplies of 4.5/30V and has a turn on time of 0.055 μs. The output peak current limit-nom is 9A, making it suitable for a variety of applications. Its driven configuration is low-side, and it uses IGBT, N-channel, and P-channel MOSFETs. With a length of 4.9mm, this component is compact and versatile.
IXDN509SIA Features
Embedded in the Tube package
1 drivers
Employing a gate type of IGBT, N-Channel, P-Channel MOSFET
IXDN509SIA Applications
There are a lot of IXYS IXDN509SIA gate drivers applications.
Video amplifiers
Active Clamp Flyback or Forward and Synchronous Rectifier
Industrial Power Supplies
Industrial Motor Inverter - Power Tools, Robotics
Uninterruptible Power Supplies (UPS)
Multicolor LED/laser displays
Portable Navigation Devices
A/D drivers
Smart Phones
Dual-Battery Systems
IXDN509SIA More Descriptions
IC GATE DRIVER SGL 9A 8-SOIC
IC GATE DRVR LOW-SIDE 8SOIC
OEMs, CMs ONLY (NO BROKERS)
IC GATE DRVR LOW-SIDE 8SOIC
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to IXDN509SIA.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryTechnologyVoltage - SupplyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageReflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusMax Output CurrentPower SuppliesNominal Supply CurrentInput TypeRise TimeFall Time (Typ)Rise / Fall Time (Typ)Interface IC TypeChannel TypeNumber of DriversTurn On TimeOutput Peak Current Limit-NomDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)High Side DriverLogic Voltage - VIL, VIHTurn Off TimeLengthWidthRoHS StatusLead FreeJESD-609 CodeTerminal FinishMax Power DissipationOperating Supply VoltageOutput CurrentNumber of PinsHeight Seated (Max)Terminal PitchView Compare
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IXDN509SIASurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)449.991981mg-55°C~150°C TJTube2007Obsolete1 (Unlimited)8EAR99MOSFET DriversCMOS4.5V~30VDUALGULL WINGNOT SPECIFIED118VNOT SPECIFIEDIXD*5098R-PDSO-G8Not Qualified9A4.5/30V75mANon-Inverting45ns40 ns25ns 23nsBUFFER OR INVERTER BASED MOSFET DRIVERSingle10.055 μs9ALow-SideIGBT, N-Channel, P-Channel MOSFET9A 9ANO0.8V 2.4V0.04 μs4.9mm3.9mmRoHS CompliantLead Free---------
-
Through HoleThrough HoleTO-220-52.299997g-55°C~150°C TJTube2004Obsolete1 (Unlimited)5EAR99--4.5V~35V--260118V35IXD*4143R-PSFM-T5Not Qualified--3mANon-Inverting27ns25 ns22ns 20nsBUFFER OR INVERTER BASED PERIPHERAL DRIVERSingle10.033 µs14ALow-SideIGBT, N-Channel, P-Channel MOSFET14A 14A-0.8V 3.5V0.034 µs--RoHS Compliant-e3Matte Tin (Sn)2W35V14A---
-
Surface MountSurface Mount6-VDFN Exposed Pad--55°C~150°C TJBulk2007Obsolete1 (Unlimited)6EAR99MOSFET DriversCMOS4.5V~30VDUALNO LEADNOT SPECIFIED118VNOT SPECIFIEDIXD*5096-Not Qualified-4.5/30V75mANon-Inverting45ns40 ns25ns 23nsBUFFER OR INVERTER BASED MOSFET DRIVERSingle10.055 µs9ALow-SideIGBT, N-Channel, P-Channel MOSFET9A 9ANO0.8V 2.4V0.04 µs5mm3.99mmRoHS Compliant------60.95mm-
-
Through HoleThrough Hole8-DIP (0.300, 7.62mm)599.989307mg-55°C~150°C TJTube2004Obsolete1 (Unlimited)8EAR99--4.5V~35VDUAL-260118V35IXD*4148-Not Qualified--3mANon-Inverting27ns25 ns22ns 20nsBUFFER OR INVERTER BASED PERIPHERAL DRIVERSingle10.033 µs14ALow-SideIGBT, N-Channel, P-Channel MOSFET14A 14A-0.8V 3.5V0.034 µs9.59mm7.62mmRoHS CompliantLead Freee3Matte Tin (Sn)833mW35V14A84.57mm2.54mm
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