Infineon Technologies IRS2106SPBF
- Part Number:
- IRS2106SPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 4547781-IRS2106SPBF
- Description:
- IC DRIVER HIGH/LOW SIDE 8-SOIC
- Datasheet:
- IRS2106SPBF
Infineon Technologies IRS2106SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRS2106SPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published1996
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)2 (1 Year)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryMOSFET Drivers
- Max Power Dissipation625mW
- TechnologyCMOS
- Voltage - Supply10V~20V
- Terminal PositionDUAL
- Terminal FormGULL WING
- Number of Functions1
- Supply Voltage15V
- Base Part NumberIRS2106SPBF
- Number of Outputs2
- Output Voltage620V
- Max Output Current600mA
- Power Supplies15V
- Nominal Supply Current180μA
- Power Dissipation625mW
- Output Current290mA
- Max Supply Current180μA
- Propagation Delay300 ns
- Input TypeNon-Inverting
- Turn On Delay Time30 ns
- Rise Time220ns
- Fall Time (Typ)80 ns
- Turn-Off Delay Time30 ns
- Release Time200 ns
- Rise / Fall Time (Typ)100ns 35ns
- Interface IC TypeBUFFER OR INVERTER BASED PERIPHERAL DRIVER
- Channel TypeIndependent
- Turn On Time0.3 μs
- Driven ConfigurationHigh-Side or Low-Side
- Gate TypeIGBT, N-Channel MOSFET
- Current - Peak Output (Source, Sink)290mA 600mA
- Logic Voltage - VIL, VIH0.8V 2.5V
- Built-in ProtectionsTRANSIENT; UNDER VOLTAGE
- High Side Voltage - Max (Bootstrap)600V
- Height1.4986mm
- Length4.9784mm
- Width3.9878mm
- Radiation HardeningNo
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRS2106SPBF Overview
A higher degree of flexibility is achieved by adopting its 8-SOIC (0.154, 3.90mm Width) package.A packaging method of Tube is used.Gate drivers is mounted in the way of Surface Mount.Using a 10V~20V supply voltage, gate drivers is capable of demonstrating Gate driverss superiorGate driversy.Gate drivers is designed wGate driversh a gate type of IGBT, N-Channel MOSFET.-40°C~150°C TJ is the allowed temperature range for this device.The input type is Non-Inverting.Mosfet driver is based on 8 terminations.Numerous related parts are available for its base part number IRS2106SPBF.Surface Mount is the way it takes to mount the device.As a result, it is configured with 8 pins when it is designed.With a supply voltage of 15V, it is designed to operate.As its interface IC, BUFFER OR INVERTER BASED PERIPHERAL DRIVER is being employed.There is an output current limit of 600mA for this device.Within this subcategory of MOSFET Drivers, there are several useful electronic components.Max (Bootstrap) can be as high as 600V.Mosfet driver has been integrated wMosfet driverh a total of 2 outputs for Mosfet drivers basis.Mosfet gate drivers can deliver a current of 290mA.625mW dissipates maximum power without overheating, showing its maximum capability to transfer and conduct power loss.To increase stability, keep the supply current at 180μA.With its power supplies of 15V, it solves the problems of power supply for a variety of applications.As a result, a voltage of 620V is produced.
IRS2106SPBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 625mW
IRS2106SPBF Applications
There are a lot of Infineon Technologies IRS2106SPBF gate drivers applications.
Line drivers
Active Clamp Flyback or Forward and Synchronous Rectifier
High frequency line drivers
White Goods - Air Conditioner, Washing Machine,
RGB applications
Pulse transformer drivers
48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
Motor controllers
High power buffers
Uninterruptible Power Supplies (UPS)
A higher degree of flexibility is achieved by adopting its 8-SOIC (0.154, 3.90mm Width) package.A packaging method of Tube is used.Gate drivers is mounted in the way of Surface Mount.Using a 10V~20V supply voltage, gate drivers is capable of demonstrating Gate driverss superiorGate driversy.Gate drivers is designed wGate driversh a gate type of IGBT, N-Channel MOSFET.-40°C~150°C TJ is the allowed temperature range for this device.The input type is Non-Inverting.Mosfet driver is based on 8 terminations.Numerous related parts are available for its base part number IRS2106SPBF.Surface Mount is the way it takes to mount the device.As a result, it is configured with 8 pins when it is designed.With a supply voltage of 15V, it is designed to operate.As its interface IC, BUFFER OR INVERTER BASED PERIPHERAL DRIVER is being employed.There is an output current limit of 600mA for this device.Within this subcategory of MOSFET Drivers, there are several useful electronic components.Max (Bootstrap) can be as high as 600V.Mosfet driver has been integrated wMosfet driverh a total of 2 outputs for Mosfet drivers basis.Mosfet gate drivers can deliver a current of 290mA.625mW dissipates maximum power without overheating, showing its maximum capability to transfer and conduct power loss.To increase stability, keep the supply current at 180μA.With its power supplies of 15V, it solves the problems of power supply for a variety of applications.As a result, a voltage of 620V is produced.
IRS2106SPBF Features
Embedded in the Tube package
Employing a gate type of IGBT, N-Channel MOSFET
8 pins
High-side voltage - Max (Bootstrap) of 600V
Maximum power dissipation of 625mW
IRS2106SPBF Applications
There are a lot of Infineon Technologies IRS2106SPBF gate drivers applications.
Line drivers
Active Clamp Flyback or Forward and Synchronous Rectifier
High frequency line drivers
White Goods - Air Conditioner, Washing Machine,
RGB applications
Pulse transformer drivers
48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
Motor controllers
High power buffers
Uninterruptible Power Supplies (UPS)
IRS2106SPBF More Descriptions
600 V high-side and low-side gate driver IC, SOIC 8N, RoHSInfineon SCT
IRS2106 Series 600 V 290 mA 20 V Supply DualHigh And Low Side Driver - SOIC-8
Power MOSFET and IGBT Driver, Hi/Lo Side, 600V, 8-pin SOIC, Tube - Rail/Tube
High and Low Side Driver, SoftTurn-On, Noninverting Inputs, All High Voltage Pins on One Side, Separate Logic and Power Ground in a 8-Lead package
Bridge Driver IC Operating temperature: -40... 125 °C Output voltage: 10...20 V Power supply: 10...20 V Input: logic input Package: SO-8 Sink output current: 0.6 A Source output current: 0.29 A
No. of Channels:2Channels; Driver Configuration:High Side and Low Side; Power Switch Type:IGBT, MOSFET; No. of Pins:8Pins; Driver Case Style:SOIC; Input Type:Non-Inverting; Source Current:290mA; Sink Current:600mA; Input Delay:220ns RoHS Compliant: Yes
IC, DRIVER, HIGH/LOW SIDE, SOIC8; Device Type:MOSFET; Module Configuration:High Side / Low Side; Peak Output Current:600mA; Input Delay:220ns; Output Delay:200ns; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-40°C to 125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2106; No. of Outputs:2; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:290mA; Output Current Max:0.6A; Output Sink Current Min:600mA; Output Source Current Min:290mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:SOIC; Power Dissipation Pd:0.625W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD
600 V High and Low Side Driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP. | Summary of Features: Floating gate driver designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout for both channels; 3.3 V, 5 V, and 15 V logic input compatible; Matched propagation delay for both channels; Logic and power ground /- 5 V offset; Lower di/dt gate driver for better noise immunity; Outputs in phase with inputs
IRS2106 Series 600 V 290 mA 20 V Supply DualHigh And Low Side Driver - SOIC-8
Power MOSFET and IGBT Driver, Hi/Lo Side, 600V, 8-pin SOIC, Tube - Rail/Tube
High and Low Side Driver, SoftTurn-On, Noninverting Inputs, All High Voltage Pins on One Side, Separate Logic and Power Ground in a 8-Lead package
Bridge Driver IC Operating temperature: -40... 125 °C Output voltage: 10...20 V Power supply: 10...20 V Input: logic input Package: SO-8 Sink output current: 0.6 A Source output current: 0.29 A
No. of Channels:2Channels; Driver Configuration:High Side and Low Side; Power Switch Type:IGBT, MOSFET; No. of Pins:8Pins; Driver Case Style:SOIC; Input Type:Non-Inverting; Source Current:290mA; Sink Current:600mA; Input Delay:220ns RoHS Compliant: Yes
IC, DRIVER, HIGH/LOW SIDE, SOIC8; Device Type:MOSFET; Module Configuration:High Side / Low Side; Peak Output Current:600mA; Input Delay:220ns; Output Delay:200ns; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-40°C to 125°C; SVHC:No SVHC (19-Dec-2011); Base Number:2106; No. of Outputs:2; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:290mA; Output Current Max:0.6A; Output Sink Current Min:600mA; Output Source Current Min:290mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:SOIC; Power Dissipation Pd:0.625W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD
600 V High and Low Side Driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP. | Summary of Features: Floating gate driver designed for bootstrap operation; Fully operational to 600 V; Tolerant to negative transient voltage, dV/dt immune; Gate drive supply range from 10 V to 20 V; Undervoltage lockout for both channels; 3.3 V, 5 V, and 15 V logic input compatible; Matched propagation delay for both channels; Logic and power ground /- 5 V offset; Lower di/dt gate driver for better noise immunity; Outputs in phase with inputs
The three parts on the right have similar specifications to IRS2106SPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTechnologyVoltage - SupplyTerminal PositionTerminal FormNumber of FunctionsSupply VoltageBase Part NumberNumber of OutputsOutput VoltageMax Output CurrentPower SuppliesNominal Supply CurrentPower DissipationOutput CurrentMax Supply CurrentPropagation DelayInput TypeTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeRelease TimeRise / Fall Time (Typ)Interface IC TypeChannel TypeTurn On TimeDriven ConfigurationGate TypeCurrent - Peak Output (Source, Sink)Logic Voltage - VIL, VIHBuilt-in ProtectionsHigh Side Voltage - Max (Bootstrap)HeightLengthWidthRadiation HardeningREACH SVHCRoHS StatusLead FreeInput Offset Voltage (Vos)Peak Reflow Temperature (Cel)Reflow Temperature-Max (s)Qualification StatusNumber of DriversOutput Current Flow DirectionSeriesView Compare
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IRS2106SPBF12 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-40°C~150°C TJTube1996e3Active2 (1 Year)8EAR99Matte Tin (Sn)MOSFET Drivers625mWCMOS10V~20VDUALGULL WING115VIRS2106SPBF2620V600mA15V180μA625mW290mA180μA300 nsNon-Inverting30 ns220ns80 ns30 ns200 ns100ns 35nsBUFFER OR INVERTER BASED PERIPHERAL DRIVERIndependent0.3 μsHigh-Side or Low-SideIGBT, N-Channel MOSFET290mA 600mA0.8V 2.5VTRANSIENT; UNDER VOLTAGE600V1.4986mm4.9784mm3.9878mmNoNo SVHCROHS3 CompliantLead Free--------
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12 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-40°C~150°C TJTube1996e3Active2 (1 Year)8EAR99Matte Tin (Sn)MOSFET Drivers625mWCMOS10V~20VDUALGULL WING115VIRS2011SPBF2220V1A15V300μA625mW1A300μA80 nsInverting20 ns40ns35 ns20 ns60 ns25ns 15nsBUFFER OR INVERTER BASED PERIPHERAL DRIVERIndependent-Half-BridgeN-Channel MOSFET1A 1A0.8V 2.7VTRANSIENT; UNDER VOLTAGE-1.4986mm4.9784mm3.9878mmNoNo SVHCROHS3 CompliantLead Free200V------
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-Surface MountSurface Mount14-SOIC (0.154, 3.90mm Width)14-40°C~150°C TJTube1996e3Obsolete2 (1 Year)14EAR99Tin (Sn)Peripheral Drivers1WCMOS10V~20VDUALGULL WING-14VIRS210614SPBF-20V600mA-120μA1W--230 nsNon-Inverting230 ns100ns35 ns230 ns-100ns 35nsBUFFER OR INVERTER BASED PERIPHERAL DRIVERIndependent-Half-BridgeIGBT, N-Channel MOSFET290mA 600mA0.8V 2.5V-600V1.5mm8.74mm3.99mm-No SVHCRoHS CompliantLead Free-26030Not Qualified2SOURCE SINK-
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18 WeeksSurface MountSurface MountSOT-23-66-40°C~125°C TJTape & Reel (TR)1996-Active1 (Unlimited)-EAR99--828mW-10V~18V-----1-240mA------Non-Inverting-85ns40 ns--85ns 40nsBUFFER OR INVERTER BASED MOSFET DRIVERSingle-High-SideN-Channel MOSFET160mA 240mA0.8V 2.2V-200V1.3mm2.9mm1.6mm--ROHS3 CompliantLead Free-NOT SPECIFIEDNOT SPECIFIED---µHVIC™
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