ISSI, Integrated Silicon Solution Inc IS61DDP2B21M18A-400M3L

Name: IS61DDP2B21M18A-400M3L
Brand: ISSI, Integrated Silicon Solution Inc
SKU: 3237027-IS61DDP2B21M18A-400M3L
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IS61DDP2B21M18A-400M3L

Manufacturer:: ISSI, Integrated Silicon Solution Inc

Ventron No:: 3237027-IS61DDP2B21M18A-400M3L

Description:: IC SDRAM 18MBIT 400MHZ 165BGA

ECAD Model:

Datasheet:: IS61DDP2B21M18A-400M3L

Specifications

ISSI, Integrated Silicon Solution Inc IS61DDP2B21M18A-400M3L technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS61DDP2B21M18A-400M3L.

Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
165-LBGA
Surface Mount
YES
Number of Pins
165
Operating Temperature
0°C~70°C TA
Packaging
Tray
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
165
ECCN Code
3A991.B.2.A
HTS Code
8542.32.00.41
Technology
SRAM - Synchronous, DDR IIP
Voltage - Supply
1.71V~1.89V
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Number of Functions
1
Supply Voltage
1.8V
Terminal Pitch
1mm
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
165
Supply Voltage-Max (Vsup)
1.89V
Supply Voltage-Min (Vsup)
1.71V
Memory Size
18Mb 1M x 18
Memory Type
Volatile
Clock Frequency
400MHz
Memory Format
SRAM
Memory Interface
Parallel
Organization
1MX18
Memory Width
18
Memory Density
18874368 bit
Access Time (Max)
0.45 ns
Height Seated (Max)
1.4mm
Length
17mm
Width
15mm
RoHS Status
ROHS3 Compliant

Description

IS61DDP2B21M18A-400M3L Overview
The SRAM - Synchronous, DDR IIP technology has gained popularity in the market due to its high-speed operation and low power consumption. The active part status of the component with 165 pins and 165 terminations makes it a reliable choice for various electronic applications. The terminal position at the bottom and pitch of 1mm further adds to its versatility and ease of use. With a supply voltage-min of 1.71V, this 18Mb 1M x 18 volatile memory is perfect for high-performance devices. Its organization of 1MX18 allows for efficient data storage and retrieval, making it a preferred option for memory-intensive systems.

IS61DDP2B21M18A-400M3L Features
Package / Case: 165-LBGA
165 Pins

IS61DDP2B21M18A-400M3L Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS61DDP2B21M18A-400M3L Memory applications.

supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card

IS61DDP2B21M18A-400M3L More Descriptions

SRAM - Synchronous, DDR IIP Memory IC 18Mb (1M x 18) Parallel 400 MHz 165-LFBGA (15x17)
SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin LFBGA
1.71V~1.89V 18Mbit FBGA-165(15x17) SRAM ROHS
IC SRAM 18MBIT PARALLEL 165LFBGA
SRAM 18Mb 400Mhz 1Mx18 DDR IIP Sync SRAM
18Mb, Ddr Iip (Burst Of 2) Cio, Sync Sram, 1M X 18, 2.0 Read Latency, 165 Ball Fbga (15X17 Mm), Rohs |Integrated Silicon Solution (Issi) IS61DDP2B21M18A-400M3L

Product Comparison

The three parts on the right have similar specifications to IS61DDP2B21M18A-400M3L.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

HTS Code

Technology

Voltage - Supply

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Time@Peak Reflow Temperature-Max (s)

Pin Count

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Memory Size

Memory Type

Clock Frequency

Memory Format

Memory Interface

Organization

Memory Width

Memory Density

Access Time (Max)

Height Seated (Max)

Length

Width

RoHS Status

Additional Feature

Reach Compliance Code

JESD-30 Code

Access Time

View Compare
IS61DDP2B21M18A-400M3L

ISSI, Integrated Silicon Solution Inc

12 Weeks

Surface Mount

165-LBGA

YES

165

0°C~70°C TA

Tray

Active

3 (168 Hours)

165

3A991.B.2.A

8542.32.00.41

SRAM - Synchronous, DDR IIP

1.71V~1.89V

BOTTOM

NOT SPECIFIED

1

1.8V

1mm

NOT SPECIFIED

165

1.89V

1.71V

18Mb 1M x 18

Volatile

400MHz

SRAM

Parallel

1MX18

18

18874368 bit

0.45 ns

1.4mm

17mm

15mm

ROHS3 Compliant

-

-

-

-

-
IS61DDB24M18A-250M3L

ISSI, Integrated Silicon Solution Inc

12 Weeks

Surface Mount

165-LBGA

YES

165

0°C~70°C TA

Tray

Active

3 (168 Hours)

165

3A991.B.2.A

8542.32.00.41

SRAM - Synchronous, DDR II

1.71V~1.89V

BOTTOM

NOT SPECIFIED

1

1.8V

1mm

NOT SPECIFIED

165

1.89V

1.71V

72Mb 4M x 18

Volatile

250MHz

SRAM

Parallel

4MX18

18

75497472 bit

0.45 ns

1.4mm

17mm

15mm

ROHS3 Compliant

PIPELINED ARCHITECTURE

-

-

-

IS61DDP2B21M18A-400M3L vs IS61DDB24M18A-250M3L
IS61DDB24M18A-300M3L

ISSI, Integrated Silicon Solution Inc

12 Weeks

Surface Mount

165-LBGA

YES

165

0°C~70°C TA

Tray

Active

3 (168 Hours)

165

3A991.B.2.A

8542.32.00.41

SRAM - Synchronous, DDR II

1.71V~1.89V

BOTTOM

NOT SPECIFIED

1

1.8V

1mm

NOT SPECIFIED

165

1.89V

1.71V

72Mb 4M x 18

Volatile

300MHz

SRAM

Parallel

4MX18

18

75497472 bit

0.45 ns

1.4mm

17mm

15mm

ROHS3 Compliant

PIPELINED ARCHITECTURE

-

-

-

IS61DDP2B21M18A-400M3L vs IS61DDB24M18A-300M3L
IS61DDB44M18A-300M3I

ISSI, Integrated Silicon Solution Inc

-

Surface Mount

165-LBGA

YES

-

-40°C~85°C TA

Tray

Last Time Buy

3 (168 Hours)

165

3A991.B.2.A

8542.32.00.41

SRAM - Synchronous, DDR II

1.71V~1.89V

BOTTOM

-

1

1.8V

1mm

-

165

1.89V

1.71V

72Mb 4M x 18

Volatile

300MHz

SRAM

Parallel

4MX18

18

75497472 bit

-

1.4mm

17mm

15mm

-

PIPELINED ARCHITECTURE

compliant

R-PBGA-B165

1.48ns

IS61DDP2B21M18A-400M3L vs IS61DDB44M18A-300M3I