ISSI, Integrated Silicon Solution Inc IS43LR32800F-6BLI
- Part Number:
- IS43LR32800F-6BLI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3245240-IS43LR32800F-6BLI
- Description:
- IC SDRAM 256MBIT 166MHZ 90BGA
- Datasheet:
- IS43/46LR32800F
ISSI, Integrated Silicon Solution Inc IS43LR32800F-6BLI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43LR32800F-6BLI.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case90-TFBGA
- Number of Pins90
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations90
- Additional FeatureAUTO/SELF REFRESH
- TechnologySDRAM - Mobile LPDDR
- Voltage - Supply1.7V~1.95V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.8mm
- Qualification StatusNot Qualified
- Operating Supply Voltage1.8V
- Supply Voltage-Max (Vsup)1.95V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size256Mb 8M x 32
- Number of Ports1
- Nominal Supply Current110mA
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency166MHz
- Access Time5.5ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width32b
- Organization8MX32
- Output Characteristics3-STATE
- Memory Width32
- Write Cycle Time - Word, Page15ns
- Address Bus Width14b
- Density256 Mb
- Standby Current-Max0.00001A
- I/O TypeCOMMON
- Refresh Cycles4096
- Sequential Burst Length24816
- Interleaved Burst Length24816
- Height Seated (Max)1.2mm
- Length13mm
- RoHS StatusRoHS Compliant
IS43LR32800F-6BLI Overview
The product features a surface mount mounting type, providing ease of installation and reliability. The package/case is 90-TFBGA, ensuring compactness and durability. The packaging is in tray form, allowing for efficient storage and handling. With a maximum supply voltage of 1.95V, the product offers stable and efficient performance. The access time of 5.5ns ensures quick and efficient data retrieval. The memory format is DRAM, providing high-speed data storage capability. The product has a data bus width of 32b, allowing for efficient data transfer. The write cycle time for both word and page is 15ns, ensuring fast and accurate data writing. The address bus width is 14b, providing sufficient space for addressing memory locations. The sequential burst length of 24816 allows for efficient data transfer in a continuous manner.
IS43LR32800F-6BLI Features
Package / Case: 90-TFBGA
90 Pins
Operating Supply Voltage:1.8V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS43LR32800F-6BLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43LR32800F-6BLI Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
The product features a surface mount mounting type, providing ease of installation and reliability. The package/case is 90-TFBGA, ensuring compactness and durability. The packaging is in tray form, allowing for efficient storage and handling. With a maximum supply voltage of 1.95V, the product offers stable and efficient performance. The access time of 5.5ns ensures quick and efficient data retrieval. The memory format is DRAM, providing high-speed data storage capability. The product has a data bus width of 32b, allowing for efficient data transfer. The write cycle time for both word and page is 15ns, ensuring fast and accurate data writing. The address bus width is 14b, providing sufficient space for addressing memory locations. The sequential burst length of 24816 allows for efficient data transfer in a continuous manner.
IS43LR32800F-6BLI Features
Package / Case: 90-TFBGA
90 Pins
Operating Supply Voltage:1.8V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS43LR32800F-6BLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43LR32800F-6BLI Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
IS43LR32800F-6BLI More Descriptions
256M, 1.8V, Mobile DDR, 8Mx32, 166Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
DRAM Chip Mobile-DDR SDRAM 256Mbit 8Mx32 1.8V 90-Pin TFBGA
IC DRAM 256MBIT PARALLEL 90TFBGA
DRAM Chip Mobile-DDR SDRAM 256Mbit 8Mx32 1.8V 90-Pin TFBGA
IC DRAM 256MBIT PARALLEL 90TFBGA
The three parts on the right have similar specifications to IS43LR32800F-6BLI.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchQualification StatusOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsNominal Supply CurrentMemory TypeOperating ModeClock FrequencyAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthRoHS StatusFactory Lead TimeSurface MountPower SuppliesSupply Current-MaxMemory DensityWidthECCN CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeView Compare
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IS43LR32800F-6BLISurface MountSurface Mount90-TFBGA90-40°C~85°C TATrayObsolete3 (168 Hours)90AUTO/SELF REFRESHSDRAM - Mobile LPDDR1.7V~1.95VBOTTOM11.8V0.8mmNot Qualified1.8V1.95V1.7V256Mb 8M x 321110mAVolatileSYNCHRONOUS166MHz5.5nsDRAMParallel32b8MX323-STATE3215ns14b256 Mb0.00001ACOMMON409624816248161.2mm13mmRoHS Compliant-----------
-
-Surface Mount90-LFBGA900°C~70°C TATrayActive3 (168 Hours)90AUTO/SELF REFRESHSDRAM - Mobile LPDDR1.7V~1.95VBOTTOM11.8V0.8mmNot Qualified-1.95V1.7V64Mb 2M x 321-VolatileSYNCHRONOUS166MHz5.5nsDRAMParallel-32MX323-STATE3215ns--0.00002ACOMMON819224816248161.45mm13mmROHS3 Compliant14 WeeksYES1.8V0.22mA1073741824 bit8mm----
-
-Surface Mount60-TFBGA--40°C~85°C TATape & Reel (TR)Active3 (168 Hours)--SDRAM - DDR21.7V~1.9V--------2Gb 256M x 8--Volatile-333MHz450psDRAMParallel----15ns---------ROHS3 Compliant8 Weeks---------
-
-Surface Mount60-TFBGA--40°C~85°C TATrayActive3 (168 Hours)60PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESHSDRAM - DDR2.3V~2.7VBOTTOM12.5V1mm--2.7V2.3V512Mb 32M x 161-VolatileSYNCHRONOUS166MHz700psDRAMParallel-32MX16-1615ns-------1.2mm13mmROHS3 Compliant8 WeeksYES--536870912 bit8mmEAR99NOT SPECIFIEDNOT SPECIFIEDR-PBGA-B60
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