ISSI, Integrated Silicon Solution Inc IS43DR86400C-25DBL-TR
- Part Number:
- IS43DR86400C-25DBL-TR
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 3234021-IS43DR86400C-25DBL-TR
- Description:
- IC SDRAM 512MBIT 400MHZ 60BGA
- Datasheet:
- IS43/46DR(86400C,16320C)
ISSI, Integrated Silicon Solution Inc IS43DR86400C-25DBL-TR technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43DR86400C-25DBL-TR.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case60-TFBGA
- Number of Pins60
- Operating Temperature0°C~70°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologySDRAM - DDR2
- Voltage - Supply1.7V~1.9V
- Memory Size512Mb 64M x 8
- Memory TypeVolatile
- Max Supply Current135mA
- Clock Frequency400MHz
- Access Time400ps
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width8b
- Write Cycle Time - Word, Page15ns
- RoHS StatusROHS3 Compliant
IS43DR86400C-25DBL-TR Overview
The package or case of this particular product is a 60-TFBGA, which refers to the type of casing used to protect the internal components. It has a total of 60 pins, which are used for connecting the device to other electronic components. The packaging method used for this product is Tape & Reel (TR), which ensures efficient and safe transportation. With a Moisture Sensitivity Level (MSL) of 3 (168 Hours), this product can withstand exposure to moisture for up to 168 hours without any damage. It is a volatile memory type, meaning it requires a power source to retain its data. The maximum supply current for this product is 135mA, and the memory format is DRAM, which stands for Dynamic Random Access Memory. It has a parallel memory interface and a data bus width of 8b, allowing for high-speed data transfer. Additionally, this product is ROHS3 compliant, meaning it is in line with the latest environmental regulations.
IS43DR86400C-25DBL-TR Features
Package / Case: 60-TFBGA
60 Pins
IS43DR86400C-25DBL-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43DR86400C-25DBL-TR Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
The package or case of this particular product is a 60-TFBGA, which refers to the type of casing used to protect the internal components. It has a total of 60 pins, which are used for connecting the device to other electronic components. The packaging method used for this product is Tape & Reel (TR), which ensures efficient and safe transportation. With a Moisture Sensitivity Level (MSL) of 3 (168 Hours), this product can withstand exposure to moisture for up to 168 hours without any damage. It is a volatile memory type, meaning it requires a power source to retain its data. The maximum supply current for this product is 135mA, and the memory format is DRAM, which stands for Dynamic Random Access Memory. It has a parallel memory interface and a data bus width of 8b, allowing for high-speed data transfer. Additionally, this product is ROHS3 compliant, meaning it is in line with the latest environmental regulations.
IS43DR86400C-25DBL-TR Features
Package / Case: 60-TFBGA
60 Pins
IS43DR86400C-25DBL-TR Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43DR86400C-25DBL-TR Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
IS43DR86400C-25DBL-TR More Descriptions
DRAM Chip DDR2 SDRAM 512M-Bit 64M x 8 1.8V 60-Pin TWBGA T/R
IC DRAM 512MBIT PARALLEL 60TWBGA
DRAM 512M, 1.8V, 400Mhz 64Mx8 DDR2
512M, 1.8V, Ddr2, 64Mx8, 400Mhz @ Cl5, 60 Ball Bga (8Mm X 10.5Mm) Rohs, T&r |Integrated Silicon Solution (Issi) IS43DR86400C-25DBL-TR
IC DRAM 512MBIT PARALLEL 60TWBGA
DRAM 512M, 1.8V, 400Mhz 64Mx8 DDR2
512M, 1.8V, Ddr2, 64Mx8, 400Mhz @ Cl5, 60 Ball Bga (8Mm X 10.5Mm) Rohs, T&r |Integrated Silicon Solution (Issi) IS43DR86400C-25DBL-TR
The three parts on the right have similar specifications to IS43DR86400C-25DBL-TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeMax Supply CurrentClock FrequencyAccess TimeMemory FormatMemory InterfaceData Bus WidthWrite Cycle Time - Word, PageRoHS StatusSurface MountNumber of TerminationsAdditional FeatureTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Number of PortsOperating ModeSupply Current-MaxOrganizationOutput CharacteristicsMemory WidthStandby Current-MaxMemory DensityI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthLengthHeight Seated (Max)WidthView Compare
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IS43DR86400C-25DBL-TR8 WeeksSurface Mount60-TFBGA600°C~70°C TATape & Reel (TR)Active3 (168 Hours)SDRAM - DDR21.7V~1.9V512Mb 64M x 8Volatile135mA400MHz400psDRAMParallel8b15nsROHS3 Compliant---------------------------
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14 WeeksSurface Mount90-LFBGA900°C~70°C TATrayActive3 (168 Hours)SDRAM - Mobile LPDDR1.7V~1.95V64Mb 2M x 32Volatile-166MHz5.5nsDRAMParallel-15nsROHS3 CompliantYES90AUTO/SELF REFRESHBOTTOM11.8V0.8mmNot Qualified1.95V1.8V1.7V1SYNCHRONOUS0.22mA32MX323-STATE320.00002A1073741824 bitCOMMON8192248162481613mm1.45mm8mm
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8 WeeksSurface Mount60-TFBGA--40°C~85°C TATape & Reel (TR)Active3 (168 Hours)SDRAM - DDR21.7V~1.9V2Gb 256M x 8Volatile-333MHz450psDRAMParallel-15nsROHS3 Compliant--------------------------
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8 WeeksSurface Mount84-TFBGA--40°C~85°C TATape & Reel (TR)Active3 (168 Hours)SDRAM - DDR21.7V~1.9V2Gb 128M x 16Volatile-400MHz400nsDRAMParallel-15nsROHS3 Compliant--------------------------
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