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IS43DR82560C-3DBLI

ISSI, Integrated Silicon Solution Inc IS43DR82560C-3DBLI

Part Number:
IS43DR82560C-3DBLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Ventron No:
3228763-IS43DR82560C-3DBLI
Description:
IC SDRAM 2GBIT 333MHZ 60BGA
ECAD Model:
Datasheet:
IS43DR82560C-3DBLI

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Specifications
ISSI, Integrated Silicon Solution Inc IS43DR82560C-3DBLI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS43DR82560C-3DBLI.
  • Factory Lead Time
    8 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    60-TFBGA
  • Surface Mount
    YES
  • Operating Temperature
    -40°C~85°C TA
  • Packaging
    Tray
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Number of Terminations
    60
  • ECCN Code
    EAR99
  • Additional Feature
    PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
  • Technology
    SDRAM - DDR2
  • Voltage - Supply
    1.7V~1.9V
  • Terminal Position
    BOTTOM
  • Number of Functions
    1
  • Supply Voltage
    1.8V
  • Terminal Pitch
    0.8mm
  • JESD-30 Code
    R-PBGA-B60
  • Qualification Status
    Not Qualified
  • Supply Voltage-Max (Vsup)
    1.9V
  • Power Supplies
    1.8V
  • Supply Voltage-Min (Vsup)
    1.7V
  • Memory Size
    2Gb 256M x 8
  • Number of Ports
    1
  • Memory Type
    Volatile
  • Operating Mode
    SYNCHRONOUS
  • Clock Frequency
    333MHz
  • Supply Current-Max
    0.455mA
  • Access Time
    450ps
  • Memory Format
    DRAM
  • Memory Interface
    Parallel
  • Organization
    256MX8
  • Output Characteristics
    3-STATE
  • Memory Width
    8
  • Write Cycle Time - Word, Page
    15ns
  • Standby Current-Max
    0.03A
  • Memory Density
    2147483648 bit
  • I/O Type
    COMMON
  • Refresh Cycles
    8192
  • Sequential Burst Length
    48
  • Interleaved Burst Length
    48
  • Height Seated (Max)
    1.2mm
  • Length
    10.5mm
  • Width
    8mm
  • RoHS Status
    ROHS3 Compliant
Description
IS43DR82560C-3DBLI Overview
This product features a Surface Mount mounting type and is currently in Active status. The terminal position is located at the bottom of the product. With a supply voltage of 1.8V and a maximum supply voltage of 1.9V, this product offers reliable and stable power supply. It has 1 port and utilizes DRAM memory format with an organization of 256MX8. The memory width is 8, providing ample storage capacity. Measuring at a length of 10.5mm, this product is compact and suitable for various applications. Overall, it is a high-quality and versatile product that meets the demands of modern technology.

IS43DR82560C-3DBLI Features
Package / Case: 60-TFBGA
Additional Feature:PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
I/O Type: COMMON


IS43DR82560C-3DBLI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS43DR82560C-3DBLI Memory applications.


personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
IS43DR82560C-3DBLI More Descriptions
2G, 1.8V, DDR2, 256MX8, 333MHZ @ CL5, 60 BALL BGA (8MMX10.5MM) ROHS, IT
DRAM Chip DDR2 SDRAM 2G-Bit 256Mx8 1.8V 60-Pin TWBGA
EAR99 Surface Mount Tray 256MX8 ic memory 333MHz 450ps 8mm 0.03A
DDR SDRAM, 256Mx8, 1.8V, 8K, BGA-60,RoHSISSI SCT
IC DRAM 2GBIT PARALLEL 60TWBGA
DRAM 2G 256Mx8 333MHz DDR2 1.8V
Product Comparison
The three parts on the right have similar specifications to IS43DR82560C-3DBLI.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Technology
    Voltage - Supply
    Terminal Position
    Number of Functions
    Supply Voltage
    Terminal Pitch
    JESD-30 Code
    Qualification Status
    Supply Voltage-Max (Vsup)
    Power Supplies
    Supply Voltage-Min (Vsup)
    Memory Size
    Number of Ports
    Memory Type
    Operating Mode
    Clock Frequency
    Supply Current-Max
    Access Time
    Memory Format
    Memory Interface
    Organization
    Output Characteristics
    Memory Width
    Write Cycle Time - Word, Page
    Standby Current-Max
    Memory Density
    I/O Type
    Refresh Cycles
    Sequential Burst Length
    Interleaved Burst Length
    Height Seated (Max)
    Length
    Width
    RoHS Status
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    View Compare
  • IS43DR82560C-3DBLI
    IS43DR82560C-3DBLI
    ISSI, Integrated Silicon Solution Inc
    8 Weeks
    Surface Mount
    60-TFBGA
    YES
    -40°C~85°C TA
    Tray
    Active
    3 (168 Hours)
    60
    EAR99
    PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
    SDRAM - DDR2
    1.7V~1.9V
    BOTTOM
    1
    1.8V
    0.8mm
    R-PBGA-B60
    Not Qualified
    1.9V
    1.8V
    1.7V
    2Gb 256M x 8
    1
    Volatile
    SYNCHRONOUS
    333MHz
    0.455mA
    450ps
    DRAM
    Parallel
    256MX8
    3-STATE
    8
    15ns
    0.03A
    2147483648 bit
    COMMON
    8192
    48
    48
    1.2mm
    10.5mm
    8mm
    ROHS3 Compliant
    -
    -
    -
  • IS43DR82560C-3DBLI-TR
    IS43DR82560C-3DBLI-TR
    ISSI, Integrated Silicon Solution Inc
    8 Weeks
    Surface Mount
    60-TFBGA
    -
    -40°C~85°C TA
    Tape & Reel (TR)
    Active
    3 (168 Hours)
    -
    -
    -
    SDRAM - DDR2
    1.7V~1.9V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    2Gb 256M x 8
    -
    Volatile
    -
    333MHz
    -
    450ps
    DRAM
    Parallel
    -
    -
    -
    15ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    IS43DR82560C-3DBLI vs IS43DR82560C-3DBLI-TR
  • IS43R16320F-5BLI
    IS43R16320F-5BLI
    ISSI, Integrated Silicon Solution Inc
    8 Weeks
    Surface Mount
    60-TFBGA
    YES
    -40°C~85°C TA
    Tray
    Active
    3 (168 Hours)
    60
    EAR99
    PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
    SDRAM - DDR
    2.3V~2.7V
    BOTTOM
    1
    2.5V
    1mm
    R-PBGA-B60
    -
    2.7V
    -
    2.3V
    512Mb 32M x 16
    1
    Volatile
    SYNCHRONOUS
    200MHz
    -
    700ps
    DRAM
    Parallel
    32MX16
    -
    16
    15ns
    -
    536870912 bit
    -
    -
    -
    -
    1.2mm
    13mm
    8mm
    ROHS3 Compliant
    NOT SPECIFIED
    NOT SPECIFIED
    IS43DR82560C-3DBLI vs IS43R16320F-5BLI
  • IS43R16320F-6BLI
    IS43R16320F-6BLI
    ISSI, Integrated Silicon Solution Inc
    8 Weeks
    Surface Mount
    60-TFBGA
    YES
    -40°C~85°C TA
    Tray
    Active
    3 (168 Hours)
    60
    EAR99
    PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
    SDRAM - DDR
    2.3V~2.7V
    BOTTOM
    1
    2.5V
    1mm
    R-PBGA-B60
    -
    2.7V
    -
    2.3V
    512Mb 32M x 16
    1
    Volatile
    SYNCHRONOUS
    166MHz
    -
    700ps
    DRAM
    Parallel
    32MX16
    -
    16
    15ns
    -
    536870912 bit
    -
    -
    -
    -
    1.2mm
    13mm
    8mm
    ROHS3 Compliant
    NOT SPECIFIED
    NOT SPECIFIED
    IS43DR82560C-3DBLI vs IS43R16320F-6BLI
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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