Infineon Technologies IRF9952PBF
- Part Number:
- IRF9952PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2475351-IRF9952PBF
- Description:
- MOSFET N/P-CH 30V 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF9952PBF
Infineon Technologies IRF9952PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF9952PBF.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2004
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance100mOhm
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- SubcategoryOther Transistors
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating3.5A
- Base Part NumberIRF9952PBF
- Number of Elements2
- Row Spacing6.3 mm
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- FET TypeN and P-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs100m Ω @ 2.2A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds190pF @ 15V
- Current - Continuous Drain (Id) @ 25°C3.5A 2.3A
- Gate Charge (Qg) (Max) @ Vgs14nC @ 10V
- Rise Time14ns
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Fall Time (Typ)6.9 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)3.5A
- Threshold Voltage1V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)16A
- Avalanche Energy Rating (Eas)44 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Nominal Vgs1 V
- Height1.4986mm
- Length4.9784mm
- Width4.05mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF9952PBF Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet IRF9952PBF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRF9952PBF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet IRF9952PBF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRF9952PBF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IRF9952PBF More Descriptions
Trans MOSFET N/P-CH 30V 3.5A/2.3A 8-Pin SOIC Tube
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.5A; On Resistance, Rds(on):100mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; Cont Current Id N Channel 2:3.5A; Cont Current Id P Channel:2.3A; Current Id Max:3.5A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; On State Resistance N Channel Max:100mohm; On State Resistance P Channel Max:250mohm; Package / Case:SOIC; Pin Configuration:b; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation P Channel 2:2W; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:16A; Pulse Current Idm N Channel 2:16A; Pulse Current Idm P Channel:10A; Row Pitch:6.3mm; SMD Marking:F9952
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.5A; On Resistance, Rds(on):100mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; Cont Current Id N Channel 2:3.5A; Cont Current Id P Channel:2.3A; Current Id Max:3.5A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; On State Resistance N Channel Max:100mohm; On State Resistance P Channel Max:250mohm; Package / Case:SOIC; Pin Configuration:b; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation P Channel 2:2W; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:16A; Pulse Current Idm N Channel 2:16A; Pulse Current Idm P Channel:10A; Row Pitch:6.3mm; SMD Marking:F9952
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