Infineon Technologies IRF7910TRPBF
- Part Number:
- IRF7910TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3069665-IRF7910TRPBF
- Description:
- MOSFET 2N-CH 12V 10A 8SOIC
- ECAD Model:
-
- Datasheet:
- IRF7910TRPBF
Infineon Technologies IRF7910TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7910TRPBF.
- Factory Lead Time12 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- Resistance15MOhm
- Max Power Dissipation2W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberIRF7910PBF
- Number of Elements2
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Turn On Delay Time9.4 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs15m Ω @ 8A, 4.5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1730pF @ 6V
- Gate Charge (Qg) (Max) @ Vgs26nC @ 4.5V
- Rise Time22ns
- Fall Time (Typ)6.3 ns
- Turn-Off Delay Time16 ns
- Continuous Drain Current (ID)10A
- JEDEC-95 CodeMS-012AA
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage12V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Height1.4986mm
- Length4.9784mm
- Width3.9878mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF7910TRPBF Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet IRF7910TRPBF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRF7910TRPBF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet IRF7910TRPBF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRF7910TRPBF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IRF7910TRPBF More Descriptions
MOSFET, Power;Dual N-Ch;VDSS 12V;RDS(ON) 11.5 Milliohms;ID 10A;SO-8;PD 2W;-55deg
Single N-Channel 12 V 15 mOhm 17 nC HEXFET® Power Mosfet - SOIC-8
Transistor MOSFET Array Dual N-CH 12V 10A 8-Pin SOIC T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:12V; Continuous Drain Current, Id:10A; On Resistance, Rds(on):15mohm; Rds(on) Test Voltage, Vgs:4.5V; Leaded Process Compatible:Yes RoHS Compliant: Yes
Single N-Channel 12 V 15 mOhm 17 nC HEXFET® Power Mosfet - SOIC-8
Transistor MOSFET Array Dual N-CH 12V 10A 8-Pin SOIC T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:12V; Continuous Drain Current, Id:10A; On Resistance, Rds(on):15mohm; Rds(on) Test Voltage, Vgs:4.5V; Leaded Process Compatible:Yes RoHS Compliant: Yes
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