Infineon Technologies IRF7907TRPBF

Name: IRF7907TRPBF
Brand: Infineon Technologies
SKU: 3069711-IRF7907TRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF7907TRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 3069711-IRF7907TRPBF

Description:: MOSFET 2N-CH 30V 9.1A/11A 8-SOIC

ECAD Model:

Datasheet:: IRF7907TRPBF

Specifications

Infineon Technologies IRF7907TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7907TRPBF.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2008
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Max Power Dissipation
2W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
IRF7907PBF
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
FET Type
2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs
16.4m Ω @ 9.1A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds
850pF @ 15V
Current - Continuous Drain (Id) @ 25°C
9.1A 11A
Gate Charge (Qg) (Max) @ Vgs
10nC @ 4.5V
Continuous Drain Current (ID)
11A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Avalanche Energy Rating (Eas)
15 mJ
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
1.4986mm
Length
4.9784mm
Width
3.9878mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF7907TRPBF Description These HEXFET power MOSFET are designed for automotive applications and are packaged in dual SO-8 packages that use the latest technology to achieve extremely low on-resistance per silicon area. Other features of these automotive certified HEXFET power MOSFET include 150 °C junction operating temperature, fast switching speed and improved repeated avalanche ratings. The combination of these advantages makes the design an extremely efficient and reliable device for automotive and a variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capabilities, making it an ideal choice for a variety of power applications. This dual surface mount SO-8 can greatly reduce circuit board space, and can also be used in magnetic tapes and reels. IRF7907TRPBF Features
· Advanced Planar Technology · Ultra Low On-Resistance · Logic Level Gate Drive · Dual N and P Channel MOSFET · Surface Mount · Available in Tape & Reel · 150°C Operating Temperature · Lead-Free, RoHS Compliant · Automotive Qualified IRF7907TRPBF Applications
The combination of these advantages makes the design an extremely efficient and reliable device for automotive and a variety of other applications.

IRF7907TRPBF More Descriptions

Transistor MOSFET Array Dual N-CH 30V 9.1A/11A 8-Pin SOIC T/R - Tape and Reel
Dual N-Channel 30 V 20.5/13.7 mOhm 10/21 nC HEXFET® Power Mosfet - SOIC-8
30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package, SO8, RoHSInfineon SCT
MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.8mohm; Rds(on) Test Voltage Vgs:10V; No. of Pins:8; Leaded Process Compatible:Yes; Package / Case:SO-8
Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET
Transistor Polarity = N-Channel / Configuration = Dual / Drain-Source Voltage (Vds) V = 30 / Gate-Source Voltage V = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2
MOSFET, DUAL N CH, 30V, 11A, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0098ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Certification