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IRF7530PBF

Infineon Technologies IRF7530PBF

Part Number:
IRF7530PBF
Manufacturer:
Infineon Technologies
Ventron No:
2475329-IRF7530PBF
Description:
MOSFET 2N-CH 20V 5.4A MICRO8
ECAD Model:
Datasheet:
IRF7530PBF

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Specifications
Infineon Technologies IRF7530PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7530PBF.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
  • Number of Pins
    8
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2004
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    20V
  • Max Power Dissipation
    1.3W
  • Terminal Form
    GULL WING
  • Current Rating
    5.4A
  • Base Part Number
    IRF7530PBF
  • Number of Elements
    2
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.3W
  • Turn On Delay Time
    8.5 ns
  • FET Type
    2 N-Channel (Dual)
  • Rds On (Max) @ Id, Vgs
    30m Ω @ 5.4A, 4.5V
  • Vgs(th) (Max) @ Id
    1.2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1310pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    26nC @ 4.5V
  • Rise Time
    11ns
  • Fall Time (Typ)
    16 ns
  • Turn-Off Delay Time
    36 ns
  • Continuous Drain Current (ID)
    5.4A
  • Gate to Source Voltage (Vgs)
    12V
  • Drain-source On Resistance-Max
    0.03Ohm
  • Drain to Source Breakdown Voltage
    20V
  • Pulsed Drain Current-Max (IDM)
    40A
  • Avalanche Energy Rating (Eas)
    33 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Standard
  • Height
    910μm
  • Length
    3.048mm
  • Width
    3.048mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF7530PBF Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet IRF7530PBF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRF7530PBF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IRF7530PBF More Descriptions
MOSFET, Power;Dual N-Ch;VDSS 20V;RDS(ON) 0.03Ohm;ID 5.4A;Micro8;PD 1.3W;gFS 13S
Benefits: RoHS Compliant; Fast Switching; Low Profile (less than 1.1mm); Dual N-Channel MOSFET
20V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package, MICRO8, RoHSInfineon SCT
MOSFET, DUAL, N, MICRO8; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:20V; Current, Id Cont:5.4A; Resistance, Rds On:0.03ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1.2V; Case Style:Micro8; Termination Type:SMD
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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