Infineon Technologies IRF7509TRPBF
- Part Number:
- IRF7509TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3069703-IRF7509TRPBF
- Description:
- MOSFET N/P-CH 30V 2.7A/2A MICRO8
- Datasheet:
- IRF7509TRPBF
Infineon Technologies IRF7509TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7509TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published1998
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- Resistance200mOhm
- Additional FeatureULTRA LOW RESISTANCE
- Max Power Dissipation1.25W
- Terminal FormGULL WING
- Current Rating2.7A
- Base Part NumberIRF7509PBF
- Number of Elements2
- Number of Channels2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.25W
- FET TypeN and P-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs110m Ω @ 1.7A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds210pF @ 25V
- Current - Continuous Drain (Id) @ 25°C2.7A 2A
- Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
- Rise Time12ns
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Fall Time (Typ)9.3 ns
- Turn-Off Delay Time19 ns
- Continuous Drain Current (ID)2.7A
- Threshold Voltage1V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Max Junction Temperature (Tj)150°C
- FET FeatureLogic Level Gate
- Nominal Vgs1 V
- Height1.11mm
- Length3.048mm
- Width3.048mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF7509TRPBF Description
The fifth generation HEXFET of International Rectifier Company adopts advanced technology to achieve extremely low on-resistance per silicon area. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient and reliable device for use in a variety of applications. The new Micro8 package covers only half the footprint of the standard SO-8, making it the smallest footprint available in the SOIC outline. This makes Micro8 an ideal device for applications with limited space on printed circuit boards. The ultra-thin shape of Micro8 (< 1.1 mm) makes it easy to adapt to extremely thin application environments, such as portable electronics and PCMCIA cards.
IRF7509TRPBF Features
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Lead-Free IRF7509TRPBF Applications
provides designers with an extremely efficient and reliable device for use in a variety of applications.
The fifth generation HEXFET of International Rectifier Company adopts advanced technology to achieve extremely low on-resistance per silicon area. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient and reliable device for use in a variety of applications. The new Micro8 package covers only half the footprint of the standard SO-8, making it the smallest footprint available in the SOIC outline. This makes Micro8 an ideal device for applications with limited space on printed circuit boards. The ultra-thin shape of Micro8 (< 1.1 mm) makes it easy to adapt to extremely thin application environments, such as portable electronics and PCMCIA cards.
IRF7509TRPBF Features
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching Lead-Free IRF7509TRPBF Applications
provides designers with an extremely efficient and reliable device for use in a variety of applications.
IRF7509TRPBF More Descriptions
INFINEON SMD DUAL MOSFET N PFET ±30V 2,7A 20mΩ 150°C 8-TSSOP IRF7509TRPBF
30V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 8 package, MICRO8, RoHSInfineon SCT
MOSFET Array N-CH/P-CH 30V 2.7A/2A 8-Pin uSOIC T/R - Product that comes on tape, but is not reeled (
Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, NP; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.25W; Transistor Case Style:µSOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Cont Current Id N Channel:2.7A; Cont Current Id P Channel:2A; Current Id Max:2.7A; On State Resistance @ Vgs = 10V N Channel:900mohm; On State Resistance @ Vgs = 10V P Channel:170mohm; On State Resistance @ Vgs = 4.5V N Channel:140mohm; On State Resistance @ Vgs = 4.5V P Channel:300mohm; Package / Case:Micro8; Power Dissipation Pd:1.25W; Pulse Current Idm N Channel:21A; Pulse Current Idm P Channel:16A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds N Channel:10V; Voltage Vgs Rds P Channel:10V; Voltage Vgs Rds on Measurement:10V
Transistor Polarity = N-Channel / Transistor Polarity = P-Channel / Configuration = Dual / Drain-Source Voltage (Vds) V = 30 / Gate-Source Voltage V = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = Micro8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 240 / Power Dissipation (Pd) W = 1.25
30V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 8 package, MICRO8, RoHSInfineon SCT
MOSFET Array N-CH/P-CH 30V 2.7A/2A 8-Pin uSOIC T/R - Product that comes on tape, but is not reeled (
Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, NP; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.25W; Transistor Case Style:µSOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Cont Current Id N Channel:2.7A; Cont Current Id P Channel:2A; Current Id Max:2.7A; On State Resistance @ Vgs = 10V N Channel:900mohm; On State Resistance @ Vgs = 10V P Channel:170mohm; On State Resistance @ Vgs = 4.5V N Channel:140mohm; On State Resistance @ Vgs = 4.5V P Channel:300mohm; Package / Case:Micro8; Power Dissipation Pd:1.25W; Pulse Current Idm N Channel:21A; Pulse Current Idm P Channel:16A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds N Channel:10V; Voltage Vgs Rds P Channel:10V; Voltage Vgs Rds on Measurement:10V
Transistor Polarity = N-Channel / Transistor Polarity = P-Channel / Configuration = Dual / Drain-Source Voltage (Vds) V = 30 / Gate-Source Voltage V = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = Micro8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 240 / Power Dissipation (Pd) W = 1.25
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