Infineon Technologies IRF7503TRPBF

Name: IRF7503TRPBF
Brand: Infineon Technologies
SKU: 2473324-IRF7503TRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF7503TRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2473324-IRF7503TRPBF

Description:: MOSFET 2N-CH 30V 2.4A MICRO8

ECAD Model:

Datasheet:: IRF7503TRPBF

Specifications

Infineon Technologies IRF7503TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7503TRPBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
1997
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
135mOhm
Additional Feature
ULTRA LOW RESISTANCE
Voltage - Rated DC
30V
Max Power Dissipation
1.25W
Terminal Form
GULL WING
Current Rating
2.4A
Base Part Number
IRF7503PBF
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.25W
Turn On Delay Time
4.7 ns
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
135m Ω @ 1.7A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
210pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
12nC @ 10V
Rise Time
10ns
Fall Time (Typ)
5.3 ns
Turn-Off Delay Time
12 ns
Continuous Drain Current (ID)
2.4A
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
14A
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
1 V
Height
860μm
Length
3mm
Width
3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF7503TRPBF Description
International Rectifier's Fifth Generation HEXFETs employ cutting-edge processing methods to produce extraordinarily low on-resistance per silicon area. This benefit gives the designer a highly effective and dependable device for usage in a range of applications, together with the quick switching speed and ruggedized device design that HEXFET Power MOSFETs are widely known for. The new Micro8 package offers the smallest footprint of any SOIC design, with a footprint area that is half that of the traditional SO-8. Since printed circuit board space is at a premium in these applications, the Micro8 is the perfect device. The Micro8 will readily fit into extremely small application contexts like portable electronics and PCMCIA cards thanks to its tiny profile (1.1mm).

IRF7503TRPBF Features
? Technology Generation No Logic
? Lowest On-Resistance Ever
? MOSFETs with two N-channels.
? Small SOIC Packages
? Small Profile (1.1mm)
? Available on reel-to-reel tape
? Quick Switching
? Lead-Free

IRF7503TRPBF Applications
Switching applications

IRF7503TRPBF More Descriptions

Benefits: RoHS Compliant; Fast Switching; Low Profile (less than 1.1mm); Dual N-Channel MOSFET
Dual N-Channel 30 V 0.222 Ohm 12 nC HEXFET® Power Mosfet - MICRO-8
30V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package, MICRO8, RoHSInfineon SCT
DUAL N CHANNEL MOSFET, 30V, MICRO8; Tran; DUAL N CHANNEL MOSFET, 30V, MICRO8; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:2.4A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.135ohm; Rds(on) Test Voltage Vgs:10V
Dual N Channel Mosfet, 30V, Micro8, Full Reel; Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:2.4A; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes |Infineon IRF7503TRPBF.
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 2.4 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 135 / Gate-Source Voltage V = 20 / Fall Time ns = 5.3 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 4.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = Micro8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.25

Certification