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IRF7503TR

Infineon Technologies IRF7503TR

Part Number:
IRF7503TR
Manufacturer:
Infineon Technologies
Ventron No:
2475260-IRF7503TR
Description:
MOSFET 2N-CH 30V 2.4A MICRO8
ECAD Model:
Datasheet:
IRF7503

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Specifications
Infineon Technologies IRF7503TR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7503TR.
  • Mounting Type
    Surface Mount
  • Package / Case
    8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Packaging
    Cut Tape (CT)
  • Series
    HEXFET®
  • Published
    1997
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IRF7503
  • JESD-30 Code
    R-PDSO-G8
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • Power - Max
    1.25W
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    135m Ω @ 1.7A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    210pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    2.4A
  • Gate Charge (Qg) (Max) @ Vgs
    12nC @ 10V
  • Drain to Source Voltage (Vdss)
    30V
  • Drain Current-Max (Abs) (ID)
    2.4A
  • Drain-source On Resistance-Max
    0.135Ohm
  • Pulsed Drain Current-Max (IDM)
    14A
  • DS Breakdown Voltage-Min
    30V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • RoHS Status
    Non-RoHS Compliant
Description
IRF7503TR Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet IRF7503TR or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRF7503TR. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IRF7503TR More Descriptions
30V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package
Power Field-Effect Transistor, 2.4A I(D), 30V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:2.4A; On Resistance, Rds(on):135mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:Micro8 ;RoHS Compliant: No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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