Infineon Technologies IRF7341PBF
- Part Number:
- IRF7341PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3585686-IRF7341PBF
- Description:
- MOSFET 2N-CH 55V 4.7A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF7341PBF
Infineon Technologies IRF7341PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7341PBF.
- Factory Lead Time22 Weeks
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2004
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Base Part NumberIRF7341PBF
- Power - Max2W
- FET Type2 N-Channel (Dual)
- Rds On (Max) @ Id, Vgs50m Ω @ 4.7A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds740pF @ 25V
- Current - Continuous Drain (Id) @ 25°C4.7A
- Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
- Drain to Source Voltage (Vdss)55V
- FET FeatureLogic Level Gate
- RoHS StatusROHS3 Compliant
IRF7341PBF Description
The Infineon Technologies IRF7341PBF is a 55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package from International Rectifier that utilizes advanced processing techniques to achieve the extremely low on-resistance.
IRF7341PBF Features
Generation V Technology
Ultra-Low On-Resistance
Dual N-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
IRF7341PBF Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
The Infineon Technologies IRF7341PBF is a 55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package from International Rectifier that utilizes advanced processing techniques to achieve the extremely low on-resistance.
IRF7341PBF Features
Generation V Technology
Ultra-Low On-Resistance
Dual N-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
IRF7341PBF Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
IRF7341PBF More Descriptions
Transistor: 2xN-MOSFET, unipolar, 55V, 4.7A, 0.05ohm, 2W, -55 150 deg.C, SMD, SO8
Dual N-Channel 55 V 0.065 Ohm 36 nC HEXFET® Power Mosfet - SOIC-8
Transistor MOSFET Array Dual N-CH 55V 4.7A 8-Pin SOIC Tube
Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:4.7A; On Resistance, Rds(on):50mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, DUAL, NN, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:4.7A; Drain Source Voltage Vds:55V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.7A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:38A; Row Pitch:6.3mm; SMD Marking:F7341; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V
Dual N-Channel 55 V 0.065 Ohm 36 nC HEXFET® Power Mosfet - SOIC-8
Transistor MOSFET Array Dual N-CH 55V 4.7A 8-Pin SOIC Tube
Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:4.7A; On Resistance, Rds(on):50mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, DUAL, NN, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:4.7A; Drain Source Voltage Vds:55V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.7A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:38A; Row Pitch:6.3mm; SMD Marking:F7341; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V
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