Infineon Technologies IRF7331
- Part Number:
- IRF7331
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2475303-IRF7331
- Description:
- MOSFET 2N-CH 20V 7A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF7331
Infineon Technologies IRF7331 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7331.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2007
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- Terminal FinishNOT SPECIFIED
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G8
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Power - Max2W
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs30m Ω @ 7A, 4.5V
- Vgs(th) (Max) @ Id1.2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1340pF @ 16V
- Current - Continuous Drain (Id) @ 25°C7A
- Gate Charge (Qg) (Max) @ Vgs20nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- JEDEC-95 CodeMS-012AA
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- RoHS StatusNon-RoHS Compliant
IRF7331 Description
These N-channel HEXFET power MOSFET from International Rectifier use advanced technology to achieve extremely low yellow resistance per silicon area, which provides designers with an extremely efficient device for battery and load management applications.SO-8 has been modified through customized frameworks or enhanced heat engine features and multi-chip capabilities, making it an ideal choice for a variety of power applications.With these improvements multiple devices that can be used to greatly reduce circuit board space. The package is designed for vapor phase infrared or wave soldering technology.
IRF7331 Features
Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free
IRF7331 Applications
making it an ideal choice for a variety of power applications
These N-channel HEXFET power MOSFET from International Rectifier use advanced technology to achieve extremely low yellow resistance per silicon area, which provides designers with an extremely efficient device for battery and load management applications.SO-8 has been modified through customized frameworks or enhanced heat engine features and multi-chip capabilities, making it an ideal choice for a variety of power applications.With these improvements multiple devices that can be used to greatly reduce circuit board space. The package is designed for vapor phase infrared or wave soldering technology.
IRF7331 Features
Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free
IRF7331 Applications
making it an ideal choice for a variety of power applications
IRF7331 More Descriptions
Trans MOSFET N-CH 20V 7A 8-Pin SOIC
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
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