IRF7314PBF

Infineon Technologies IRF7314PBF

Part Number:
IRF7314PBF
Manufacturer:
Infineon Technologies
Ventron No:
2474582-IRF7314PBF
Description:
MOSFET 2P-CH 20V 5.3A 8-SOIC
ECAD Model:
Datasheet:
IRF7314PBF

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Specifications
Infineon Technologies IRF7314PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7314PBF.
  • Factory Lead Time
    39 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    1997
  • JESD-609 Code
    e3
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IRF7314PBF
  • JESD-30 Code
    R-PDSO-G8
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • Power - Max
    2W
  • FET Type
    2 P-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    58m Ω @ 2.9A, 4.5V
  • Vgs(th) (Max) @ Id
    700mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    780pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    5.3A
  • Gate Charge (Qg) (Max) @ Vgs
    29nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • JEDEC-95 Code
    MS-012AA
  • Drain Current-Max (Abs) (ID)
    5.3A
  • Drain-source On Resistance-Max
    0.058Ohm
  • Pulsed Drain Current-Max (IDM)
    21A
  • DS Breakdown Voltage-Min
    20V
  • Avalanche Energy Rating (Eas)
    150 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation-Max (Abs)
    1.4W
  • FET Feature
    Logic Level Gate
  • RoHS Status
    ROHS3 Compliant
Description
IRF7314PBF Description
The Infineon Technologies IRF7314PBF is a 20V Dual P- Channel HEXFET Power MOSFET in a SO-8 package from International Rectifier that utilizes advanced processing techniques to achieve the extremely low on-resistance.

IRF7314PBF Features
Generation V Technology
Ultra-Low On-Resistance
Dual P-Channel MOSFET
Surface Mount
Fully Avalanche Rated
Lead-Free

IRF7314PBF Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
Uninterruptible power supply
IRF7314PBF More Descriptions
Transistor MOSFET Array Dual P-CH 20V 5.3A 8-Pin SOIC Tube
Dual P-Channel 20 V 0.058 Ohm 19 nC HEXFET® Power Mosfet - SOIC-8
MOSFET, DUAL, PP, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):53mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:1.4W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-5.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:1.4W; Power Dissipation Pd:1.4W; Pulse Current Idm:23A; Row Pitch:6.3mm; SMD Marking:F7314; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-700mV; Voltage Vgs Rds on Measurement:-4.5V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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