Infineon Technologies IRF7314PBF
- Part Number:
- IRF7314PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2474582-IRF7314PBF
- Description:
- MOSFET 2P-CH 20V 5.3A 8-SOIC
- Datasheet:
- IRF7314PBF
Infineon Technologies IRF7314PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7314PBF.
- Factory Lead Time39 Weeks
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published1997
- JESD-609 Codee3
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- SubcategoryOther Transistors
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberIRF7314PBF
- JESD-30 CodeR-PDSO-G8
- Qualification StatusNot Qualified
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Power - Max2W
- FET Type2 P-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs58m Ω @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id700mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds780pF @ 15V
- Current - Continuous Drain (Id) @ 25°C5.3A
- Gate Charge (Qg) (Max) @ Vgs29nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- JEDEC-95 CodeMS-012AA
- Drain Current-Max (Abs) (ID)5.3A
- Drain-source On Resistance-Max0.058Ohm
- Pulsed Drain Current-Max (IDM)21A
- DS Breakdown Voltage-Min20V
- Avalanche Energy Rating (Eas)150 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs)1.4W
- FET FeatureLogic Level Gate
- RoHS StatusROHS3 Compliant
IRF7314PBF Description
The Infineon Technologies IRF7314PBF is a 20V Dual P- Channel HEXFET Power MOSFET in a SO-8 package from International Rectifier that utilizes advanced processing techniques to achieve the extremely low on-resistance.
IRF7314PBF Features
Generation V Technology
Ultra-Low On-Resistance
Dual P-Channel MOSFET
Surface Mount
Fully Avalanche Rated
Lead-Free
IRF7314PBF Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
Uninterruptible power supply
The Infineon Technologies IRF7314PBF is a 20V Dual P- Channel HEXFET Power MOSFET in a SO-8 package from International Rectifier that utilizes advanced processing techniques to achieve the extremely low on-resistance.
IRF7314PBF Features
Generation V Technology
Ultra-Low On-Resistance
Dual P-Channel MOSFET
Surface Mount
Fully Avalanche Rated
Lead-Free
IRF7314PBF Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
Uninterruptible power supply
IRF7314PBF More Descriptions
Transistor MOSFET Array Dual P-CH 20V 5.3A 8-Pin SOIC Tube
Dual P-Channel 20 V 0.058 Ohm 19 nC HEXFET® Power Mosfet - SOIC-8
MOSFET, DUAL, PP, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):53mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:1.4W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-5.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:1.4W; Power Dissipation Pd:1.4W; Pulse Current Idm:23A; Row Pitch:6.3mm; SMD Marking:F7314; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-700mV; Voltage Vgs Rds on Measurement:-4.5V
Dual P-Channel 20 V 0.058 Ohm 19 nC HEXFET® Power Mosfet - SOIC-8
MOSFET, DUAL, PP, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):53mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:1.4W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-5.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:1.4W; Power Dissipation Pd:1.4W; Pulse Current Idm:23A; Row Pitch:6.3mm; SMD Marking:F7314; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-700mV; Voltage Vgs Rds on Measurement:-4.5V
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