Infineon Technologies IRF7311TRPBF
- Part Number:
- IRF7311TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2847575-IRF7311TRPBF
- Description:
- MOSFET 2N-CH 20V 6.6A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF7311TRPBF
Infineon Technologies IRF7311TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7311TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2004
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance29mOhm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureAVALANCHE RATED, ULTRA LOW RESISTANCE
- Voltage - Rated DC20V
- Max Power Dissipation2W
- Terminal FormGULL WING
- Current Rating6.6A
- Base Part NumberIRF7311PBF
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Turn On Delay Time8.1 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs29m Ω @ 6A, 4.5V
- Vgs(th) (Max) @ Id700mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds900pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs27nC @ 4.5V
- Rise Time17ns
- Fall Time (Typ)31 ns
- Turn-Off Delay Time38 ns
- Continuous Drain Current (ID)6.6A
- Threshold Voltage700mV
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage20V
- Avalanche Energy Rating (Eas)100 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Recovery Time77 ns
- FET FeatureLogic Level Gate
- Height1.4986mm
- Length4.9784mm
- Width3.9878mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF7311TRPBF Description
International Rectifier's fifth generation HEXFET uses advanced technology to achieve the advantage of extremely low on-resistance per silicon area. Coupled with the well-known fast switching speed and rugged device design of HEXFET Power MOSFET, designers are provided with extremely efficient and reliable devices that can be used in a variety of applications. The SO-8 has been modified through a custom lead frame to enhance thermal characteristics and multi-chip capabilities, making it an ideal choice for a variety of power applications.With these improvements multiple devices that can be used to significantly reduce circuit board space. The package is designed for gas phase infrared or wave soldering technology. IRF7311TRPBF Features
Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free IRF7311TRPBF Applications
designers are provided with extremely efficient and reliable devices that can be used in a variety of applications.
International Rectifier's fifth generation HEXFET uses advanced technology to achieve the advantage of extremely low on-resistance per silicon area. Coupled with the well-known fast switching speed and rugged device design of HEXFET Power MOSFET, designers are provided with extremely efficient and reliable devices that can be used in a variety of applications. The SO-8 has been modified through a custom lead frame to enhance thermal characteristics and multi-chip capabilities, making it an ideal choice for a variety of power applications.With these improvements multiple devices that can be used to significantly reduce circuit board space. The package is designed for gas phase infrared or wave soldering technology. IRF7311TRPBF Features
Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free IRF7311TRPBF Applications
designers are provided with extremely efficient and reliable devices that can be used in a variety of applications.
IRF7311TRPBF More Descriptions
MOSFET, Power;Dual N-Ch;VDSS 20V;RDS(ON) 0.023Ohm;ID 6.6A;SO-8;PD 2W;VGS /-12V
Transistor MOSFET Array Dual N-CH 20V 6.6A 8-Pin SOIC T/R - Tape and Reel
Dual N-Channel 20 V 0.029 Ohm 27 nC HEXFET® Power Mosfet - SOIC-8
Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:6.6A; Package/Case:8-SOIC; Power Dissipation, Pd:2W; Drain Source On Resistance @ 2.7V:46mohm; Drain Source On Resistance @ 4.5V:29mohm ;RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 6.6 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 29 / Gate-Source Voltage V = 12 / Fall Time ns = 31 / Rise Time ns = 17 / Turn-OFF Delay Time ns = 38 / Turn-ON Delay Time ns = 8.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2
Transistor MOSFET Array Dual N-CH 20V 6.6A 8-Pin SOIC T/R - Tape and Reel
Dual N-Channel 20 V 0.029 Ohm 27 nC HEXFET® Power Mosfet - SOIC-8
Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:6.6A; Package/Case:8-SOIC; Power Dissipation, Pd:2W; Drain Source On Resistance @ 2.7V:46mohm; Drain Source On Resistance @ 4.5V:29mohm ;RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 6.6 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 29 / Gate-Source Voltage V = 12 / Fall Time ns = 31 / Rise Time ns = 17 / Turn-OFF Delay Time ns = 38 / Turn-ON Delay Time ns = 8.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2
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