Infineon Technologies IRF7309PBF
- Part Number:
- IRF7309PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2474576-IRF7309PBF
- Description:
- MOSFET N/P-CH 30V 4A/3A 8SOIC
- ECAD Model:
-
- Datasheet:
- IRF7309PBF
Infineon Technologies IRF7309PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7309PBF.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2004
- JESD-609 Codee3
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureULTRA LOW RESISTANCE
- SubcategoryOther Transistors
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberIRF7309PBF
- JESD-30 CodeR-PDSO-G8
- Qualification StatusNot Qualified
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Power - Max1.4W
- FET TypeN and P-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs50m Ω @ 2.4A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds520pF @ 15V
- Current - Continuous Drain (Id) @ 25°C4A 3A
- Gate Charge (Qg) (Max) @ Vgs25nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- JEDEC-95 CodeMS-012AA
- Drain Current-Max (Abs) (ID)4A
- Drain-source On Resistance-Max0.05Ohm
- Pulsed Drain Current-Max (IDM)16A
- DS Breakdown Voltage-Min30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs)1.4W
- FET FeatureStandard
- RoHS StatusROHS3 Compliant
IRF7309PBF Description
The IRF7309PBF is a Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, coming from Fifth Generation HEXFETs from International Rectifier that utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
IRF7309PBF Features
Generation V Technology
Ultra-Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
IRF7309PBF Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
The IRF7309PBF is a Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, coming from Fifth Generation HEXFETs from International Rectifier that utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
IRF7309PBF Features
Generation V Technology
Ultra-Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
IRF7309PBF Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
IRF7309PBF More Descriptions
Dual N/P-Channel 30 V 0.05/0.1 Ohm 25/25 nC HEXFET® Power Mosfet - SOIC-8
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
MOSFET Operating temperature: -55...150 °C Housing type: SOIC-8 Polarity: N/P Variants: Enhancement mode Power dissipation: 1.4 W
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:4.7A; On Resistance, Rds(on):50mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.4W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Cont Current Id N Channel 2:4A; Cont Current Id P Channel:3A; Current Id Max:4.7A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; On State Resistance N Channel Max:50mohm; On State Resistance P Channel Max:100mohm; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation P Channel 2:1.4W; Power Dissipation Pd:1.4W; Power Dissipation Pd:1.4W; Pulse Current Idm:16A; Pulse Current Idm N Channel 2:16A; Pulse Current Idm P Channel:12A
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
MOSFET Operating temperature: -55...150 °C Housing type: SOIC-8 Polarity: N/P Variants: Enhancement mode Power dissipation: 1.4 W
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:4.7A; On Resistance, Rds(on):50mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:1.4W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Cont Current Id N Channel 2:4A; Cont Current Id P Channel:3A; Current Id Max:4.7A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; On State Resistance N Channel Max:50mohm; On State Resistance P Channel Max:100mohm; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation P Channel 2:1.4W; Power Dissipation Pd:1.4W; Power Dissipation Pd:1.4W; Pulse Current Idm:16A; Pulse Current Idm N Channel 2:16A; Pulse Current Idm P Channel:12A
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