Infineon Technologies IRF7307TRPBF
- Part Number:
- IRF7307TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2847597-IRF7307TRPBF
- Description:
- MOSFET N/P-CH 20V 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF7307TRPBF
Infineon Technologies IRF7307TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7307TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published1997
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance50mOhm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureULTRA LOW RESISTANCE
- Max Power Dissipation2W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating5.2A
- Base Part NumberIRF7307PBF
- Number of Elements2
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- FET TypeN and P-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs50m Ω @ 2.6A, 4.5V
- Vgs(th) (Max) @ Id700mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds660pF @ 15V
- Current - Continuous Drain (Id) @ 25°C5.2A 4.3A
- Gate Charge (Qg) (Max) @ Vgs20nC @ 4.5V
- Rise Time26ns
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Fall Time (Typ)33 ns
- Turn-Off Delay Time51 ns
- Continuous Drain Current (ID)5.2A
- Threshold Voltage700mV
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage20V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Nominal Vgs700 mV
- Height1.4986mm
- Length4.9784mm
- Width3.9878mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF7307TRPBF Description
The fifth generation HEXFET of International Rectifier Company uses advanced processing technology to achieve the area with the lowest on-resistance. Combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, it provides designers with an extremely efficient device that can be used in a variety of applications.SO-8 has been modified through a customized framework to enhance thermal characteristics and multi-chip capabilities,making it ideal for a variety of power applications.With these improvements.multiple devices for applications where board space is significantly reduced. The package is designed for gaseous red light or ripple, so it can achieve a power consumption of more than 0.8W in typical printed circuit board placement applications.
IRF7307TRPBF Features
Generation VTechnology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching Lead-Free IRF7307TRPBF Applications
it provides designers with an extremely efficient device that can be used in a variety of applications.
The fifth generation HEXFET of International Rectifier Company uses advanced processing technology to achieve the area with the lowest on-resistance. Combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, it provides designers with an extremely efficient device that can be used in a variety of applications.SO-8 has been modified through a customized framework to enhance thermal characteristics and multi-chip capabilities,making it ideal for a variety of power applications.With these improvements.multiple devices for applications where board space is significantly reduced. The package is designed for gaseous red light or ripple, so it can achieve a power consumption of more than 0.8W in typical printed circuit board placement applications.
IRF7307TRPBF Features
Generation VTechnology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching Lead-Free IRF7307TRPBF Applications
it provides designers with an extremely efficient device that can be used in a variety of applications.
IRF7307TRPBF More Descriptions
Dual N/P-Channel 20 V 0.07/0.14 Ohm 20/22 nC HEXFET® Power Mosfet - SOIC-8
20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
DUAL N/P CHANNEL MOSFET, 20V, SOIC; Tran; DUAL N/P CHANNEL MOSFET, 20V, SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:5.2A; Continuous Drain Current Id, P Channel:-4.3A; Drain Source Voltage Vds, N Channel:20V
Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.2A; On Resistance Rds(On):0.05Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:8Pins Rohs Compliant: Yes
Transistor Polarity = N-Channel / Transistor Polarity = P-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 5.7 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 90 / Gate-Source Voltage V = 12 / Fall Time ns = 51 / Rise Time ns = 42 / Turn-OFF Delay Time ns = 51 / Turn-ON Delay Time ns = 9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2
20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
DUAL N/P CHANNEL MOSFET, 20V, SOIC; Tran; DUAL N/P CHANNEL MOSFET, 20V, SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:5.2A; Continuous Drain Current Id, P Channel:-4.3A; Drain Source Voltage Vds, N Channel:20V
Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.2A; On Resistance Rds(On):0.05Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:8Pins Rohs Compliant: Yes
Transistor Polarity = N-Channel / Transistor Polarity = P-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 5.7 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 90 / Gate-Source Voltage V = 12 / Fall Time ns = 51 / Rise Time ns = 42 / Turn-OFF Delay Time ns = 51 / Turn-ON Delay Time ns = 9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2
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