IRF7304TRPBF

Infineon Technologies IRF7304TRPBF

Part Number:
IRF7304TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2473799-IRF7304TRPBF
Description:
MOSFET 2P-CH 20V 4.3A 8-SOIC
ECAD Model:
Datasheet:
IRF7304TRPBF

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Specifications
Infineon Technologies IRF7304TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7304TRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    1997
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Resistance
    90mOhm
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Power Rating
    2W
  • Voltage - Rated DC
    -20V
  • Max Power Dissipation
    2W
  • Terminal Form
    GULL WING
  • Current Rating
    -4.3A
  • Base Part Number
    IRF7304PBF
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2W
  • Turn On Delay Time
    8.4 ns
  • FET Type
    2 P-Channel (Dual)
  • Rds On (Max) @ Id, Vgs
    90m Ω @ 2.2A, 4.5V
  • Vgs(th) (Max) @ Id
    700mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    610pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    4.3A
  • Gate Charge (Qg) (Max) @ Vgs
    22nC @ 4.5V
  • Rise Time
    26ns
  • Drain to Source Voltage (Vdss)
    20V
  • Fall Time (Typ)
    33 ns
  • Turn-Off Delay Time
    51 ns
  • Continuous Drain Current (ID)
    -4.3A
  • Threshold Voltage
    -700mV
  • Gate to Source Voltage (Vgs)
    12V
  • Drain Current-Max (Abs) (ID)
    3.6A
  • Drain to Source Breakdown Voltage
    -20V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Recovery Time
    84 ns
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    -700 mV
  • Height
    1.4986mm
  • Length
    4.9784mm
  • Width
    3.9878mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead, Lead Free
Description
IRF7304TRPBF            Description     The fifth generation HEXFET of the International Rectifier Company adopts advanced processing technology to achieve the lowest possible switch. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient device that can be used in a variety of applications. The SO-8 has been modified through a custom lead frame to enhance its thermal characteristics and multi-chip capabilities, making it an ideal choice for a variety of power applications. Multiple devices can be used in one application, greatly reducing the circuit board space. The package is designed for the vapor phase. Infrared wave soldering technology. In typical printed circuit board installation applications, it is possible to consume more than 0.8W.   IRF7304TRPBF              Features
Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching Lead-Free   IRF7304TRPBF               Applications
HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient device that can be used in a variety of applications.  



IRF7304TRPBF More Descriptions
Transistor MOSFET Array Dual P-CH 20V 4.7A 8-Pin SOIC T/RAvnet Japan
MOSFET 2P-CH 20V 4.3A 8-SOIC / Trans MOSFET P-CH Si 20V 4.3A 8-Pin SOIC T/R
Dual P-Channel 20 V 0.14 Ohm 22 nC HEXFET® Power Mosfet - SOIC-8
DUAL P CHANNEL MOSFET, -20V, 4.7A; Trans; Transistor Polarity:P Channel; Continuous Drain Current Id,
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.09Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700Mv Rohs Compliant: Yes
Transistor Polarity = P-Channel / Configuration = Dual / Continuous Drain Current (Id) A = -4.7 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 90 / Gate-Source Voltage V = 12 / Fall Time ns = 33 / Rise Time ns = 26 / Turn-OFF Delay Time ns = 51 / Turn-ON Delay Time ns = 8.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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