Infineon Technologies IRF7304TRPBF
- Part Number:
- IRF7304TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2473799-IRF7304TRPBF
- Description:
- MOSFET 2P-CH 20V 4.3A 8-SOIC
- Datasheet:
- IRF7304TRPBF
Infineon Technologies IRF7304TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7304TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published1997
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- Resistance90mOhm
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Power Rating2W
- Voltage - Rated DC-20V
- Max Power Dissipation2W
- Terminal FormGULL WING
- Current Rating-4.3A
- Base Part NumberIRF7304PBF
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Turn On Delay Time8.4 ns
- FET Type2 P-Channel (Dual)
- Rds On (Max) @ Id, Vgs90m Ω @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id700mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds610pF @ 15V
- Current - Continuous Drain (Id) @ 25°C4.3A
- Gate Charge (Qg) (Max) @ Vgs22nC @ 4.5V
- Rise Time26ns
- Drain to Source Voltage (Vdss)20V
- Fall Time (Typ)33 ns
- Turn-Off Delay Time51 ns
- Continuous Drain Current (ID)-4.3A
- Threshold Voltage-700mV
- Gate to Source Voltage (Vgs)12V
- Drain Current-Max (Abs) (ID)3.6A
- Drain to Source Breakdown Voltage-20V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Recovery Time84 ns
- FET FeatureLogic Level Gate
- Nominal Vgs-700 mV
- Height1.4986mm
- Length4.9784mm
- Width3.9878mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead, Lead Free
IRF7304TRPBF Description
The fifth generation HEXFET of the International Rectifier Company adopts advanced processing technology to achieve the lowest possible switch. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient device that can be used in a variety of applications.
The SO-8 has been modified through a custom lead frame to enhance its thermal characteristics and multi-chip capabilities, making it an ideal choice for a variety of power applications. Multiple devices can be used in one application, greatly reducing the circuit board space. The package is designed for the vapor phase. Infrared wave soldering technology. In typical printed circuit board installation applications, it is possible to consume more than 0.8W.
IRF7304TRPBF Features
Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching Lead-Free IRF7304TRPBF Applications
HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient device that can be used in a variety of applications.
Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape &Reel Dynamic dv/dt Rating Fast Switching Lead-Free IRF7304TRPBF Applications
HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient device that can be used in a variety of applications.
IRF7304TRPBF More Descriptions
Transistor MOSFET Array Dual P-CH 20V 4.7A 8-Pin SOIC T/RAvnet Japan
MOSFET 2P-CH 20V 4.3A 8-SOIC / Trans MOSFET P-CH Si 20V 4.3A 8-Pin SOIC T/R
Dual P-Channel 20 V 0.14 Ohm 22 nC HEXFET® Power Mosfet - SOIC-8
DUAL P CHANNEL MOSFET, -20V, 4.7A; Trans; Transistor Polarity:P Channel; Continuous Drain Current Id,
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.09Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700Mv Rohs Compliant: Yes
Transistor Polarity = P-Channel / Configuration = Dual / Continuous Drain Current (Id) A = -4.7 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 90 / Gate-Source Voltage V = 12 / Fall Time ns = 33 / Rise Time ns = 26 / Turn-OFF Delay Time ns = 51 / Turn-ON Delay Time ns = 8.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2
MOSFET 2P-CH 20V 4.3A 8-SOIC / Trans MOSFET P-CH Si 20V 4.3A 8-Pin SOIC T/R
Dual P-Channel 20 V 0.14 Ohm 22 nC HEXFET® Power Mosfet - SOIC-8
DUAL P CHANNEL MOSFET, -20V, 4.7A; Trans; Transistor Polarity:P Channel; Continuous Drain Current Id,
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.09Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700Mv Rohs Compliant: Yes
Transistor Polarity = P-Channel / Configuration = Dual / Continuous Drain Current (Id) A = -4.7 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 90 / Gate-Source Voltage V = 12 / Fall Time ns = 33 / Rise Time ns = 26 / Turn-OFF Delay Time ns = 51 / Turn-ON Delay Time ns = 8.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
19 September 2023
Comparison Between 2N3055 vs TIP3055
Ⅰ. Overview of 2N3055Ⅱ. Overview of TIP3055Ⅲ. Pin diagram comparisonⅣ. Technical parametersⅤ. Comparison of current amplification factorsⅥ. Package comparisonⅦ. Symbol of 2N3055 and TIP3055Ⅷ. Application scenarios comparisonⅨ. Can... -
19 September 2023
STM32F303CCT6 Microcontroller: Footprint, Equivalent and Advantages
Ⅰ. What is STM32F303CCT6?Ⅱ. 3D Model and footprint of STM32F303CCT6Ⅲ. Technical parametersⅣ. Features of STM32F303CCT6Ⅴ. Package and packaging of STM32F303CCT6Ⅵ. Typical and maximum current consumptionⅦ. Advantages of STM32F303CCT6... -
20 September 2023
ATMEGA8-16PU Microcontroller: Symbol, Equivalent and Electrical Characteristics
Ⅰ. Overview of ATMEGA8-16PUⅡ. Symbol, Footprint and Pin Configuration of ATMEGA8-16PUⅢ. Technical parametersⅣ. Electrical characteristics of ATMEGA8-16PUⅤ. What is the difference between ATMEGA8-16PU and ATMEGA8-16PI?Ⅵ. I/O Memory of... -
20 September 2023
The Pinout, Advantages, and Electrical Characteristics of AO4466
Ⅰ. What is AO4466?Ⅱ. Symbol, Pinout and Footprint of AO4466Ⅲ. Technical parametersⅣ. What are the advantages of AO4466?Ⅴ. Application fields of AO4466Ⅵ. Typical electrical characteristicsⅦ. How to detect...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.