Infineon Technologies IRF7304TR
- Part Number:
- IRF7304TR
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2475294-IRF7304TR
- Description:
- MOSFET 2P-CH 20V 4.3A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF7304
Infineon Technologies IRF7304TR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7304TR.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published1997
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G8
- Qualification StatusNot Qualified
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Power - Max2W
- FET Type2 P-Channel (Dual)
- Rds On (Max) @ Id, Vgs90m Ω @ 2.2A, 4.5V
- Vgs(th) (Max) @ Id700mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds610pF @ 15V
- Current - Continuous Drain (Id) @ 25°C4.3A
- Gate Charge (Qg) (Max) @ Vgs22nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- Drain Current-Max (Abs) (ID)3.6A
- Drain-source On Resistance-Max0.09Ohm
- DS Breakdown Voltage-Min20V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- RoHS StatusNon-RoHS Compliant
IRF7304TR Description
The fifth generation HEXFET of International Rectifier Company adopts advanced technology to achieve the lowest possible on-resistance per silicon area. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient device that can be used in a variety of applications. SO-8 has been improved by customizing lead frames to enhance thermal and multi-chip capabilities, making it ideal for a variety of power applications. With these improvements, multiple devices can be used in one application, greatly reducing circuit board space. The package is suitable for gas phase, infrared or wave soldering technology. In typical PCB placement applications, it is possible to consume more than 0.8W.
IRF7304TR Features
Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching IRF7304TR Applications device that can be used in a variety of applications
The fifth generation HEXFET of International Rectifier Company adopts advanced technology to achieve the lowest possible on-resistance per silicon area. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient device that can be used in a variety of applications. SO-8 has been improved by customizing lead frames to enhance thermal and multi-chip capabilities, making it ideal for a variety of power applications. With these improvements, multiple devices can be used in one application, greatly reducing circuit board space. The package is suitable for gas phase, infrared or wave soldering technology. In typical PCB placement applications, it is possible to consume more than 0.8W.
IRF7304TR Features
Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching IRF7304TR Applications device that can be used in a variety of applications
IRF7304TR More Descriptions
Trans MOSFET P-CH 20V 4.3A 8-Pin SOIC T/R
-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-4.3A; On Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:-4.5V; Leaded Process Compatible:No RoHS Compliant: No
-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
Power Field-Effect Transistor, 3.6A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
French Electronic Distributor since 1988
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-4.3A; On Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:-4.5V; Leaded Process Compatible:No RoHS Compliant: No
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