Infineon Technologies IRF7303TRPBF
- Part Number:
- IRF7303TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2473714-IRF7303TRPBF
- Description:
- MOSFET 2N-CH 30V 4.9A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF7303TRPBF
Infineon Technologies IRF7303TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7303TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published1997
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance50mOhm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureULTRA LOW RESISTANCE
- Voltage - Rated DC30V
- Max Power Dissipation2W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating4.9A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberIRF7303PBF
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Turn On Delay Time6.8 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs50m Ω @ 2.4A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds520pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
- Rise Time21ns
- Fall Time (Typ)7.7 ns
- Turn-Off Delay Time22 ns
- Continuous Drain Current (ID)4.9A
- Threshold Voltage1V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Recovery Time71 ns
- FET FeatureStandard
- Nominal Vgs1 V
- Height1.4986mm
- Length4.9784mm
- Width3.9878mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF7303TRPBF Description
The Fifth Generation HEXFETs from International Rectifier use cutting-edge processing techniques to create incredibly low on-resistance per silicon area. With the quick switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, the designer now has a highly effective and dependable device for use in a variety of applications. The new Micro8 package, with a footprint area that is half that of the conventional SO-8, delivers the smallest footprint of any SOIC design. The Micro8 is the ideal tool since in many applications printed circuit board space is at a premium. Thanks to its low profile, the Micro8 will easily fit into extremely small application contexts like portable devices and PCMCIA cards (1.1mm).
IRF7303TRPBF Features
? Technology of the Generation
? Extremely Low On Resistance
? Double-N-Channel MOSFET
? Very Tiny SOIC Package
? Low Profile (around 1.1mm)
? Sold on reel-to-reel tape
? Rapid Switching
? Lead-Free
IRF7303TRPBF Applications
Switching applications
The Fifth Generation HEXFETs from International Rectifier use cutting-edge processing techniques to create incredibly low on-resistance per silicon area. With the quick switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, the designer now has a highly effective and dependable device for use in a variety of applications. The new Micro8 package, with a footprint area that is half that of the conventional SO-8, delivers the smallest footprint of any SOIC design. The Micro8 is the ideal tool since in many applications printed circuit board space is at a premium. Thanks to its low profile, the Micro8 will easily fit into extremely small application contexts like portable devices and PCMCIA cards (1.1mm).
IRF7303TRPBF Features
? Technology of the Generation
? Extremely Low On Resistance
? Double-N-Channel MOSFET
? Very Tiny SOIC Package
? Low Profile (around 1.1mm)
? Sold on reel-to-reel tape
? Rapid Switching
? Lead-Free
IRF7303TRPBF Applications
Switching applications
IRF7303TRPBF More Descriptions
Transistor MOSFET Negative Channel 30 Volt 4.9A 8-Pin SOIC T/R
MOSFET, Power;Dual N-Ch;VDSS 30V;RDS(ON) 0.05Ohm;ID 4.9A;SO-8;PD 2W;VGS /-20V
Dual N-Channel 30V 0.08 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8
INFINEON SMD MOSFET NFET 30V 4,9A 0,05Ω 150°C SO-8 IRF7303TRPBF
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC T/R
Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:4.9A; Continuous Drain Current Id P Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes |Infineon IRF7303TRPBF.
MOSFET, NNCH, 30V, 4.9A, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (18-Jun-2012)
MOSFET, Power;Dual N-Ch;VDSS 30V;RDS(ON) 0.05Ohm;ID 4.9A;SO-8;PD 2W;VGS /-20V
Dual N-Channel 30V 0.08 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8
INFINEON SMD MOSFET NFET 30V 4,9A 0,05Ω 150°C SO-8 IRF7303TRPBF
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC T/R
Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:4.9A; Continuous Drain Current Id P Channel:-; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes |Infineon IRF7303TRPBF.
MOSFET, NNCH, 30V, 4.9A, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (18-Jun-2012)
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