Infineon Technologies IRF7303PBF
- Part Number:
- IRF7303PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3585695-IRF7303PBF
- Description:
- MOSFET 2N-CH 30V 4.9A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF7303PBF
Infineon Technologies IRF7303PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7303PBF.
- Factory Lead Time22 Weeks
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published1997
- JESD-609 Codee3
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureLOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberIRF7303PBF
- JESD-30 CodeR-PDSO-G8
- Qualification StatusNot Qualified
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Power - Max2W
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs50m Ω @ 2.4A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds520pF @ 25V
- Current - Continuous Drain (Id) @ 25°C4.9A
- Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
- Drain to Source Voltage (Vdss)30V
- JEDEC-95 CodeMS-012AA
- Drain Current-Max (Abs) (ID)4.9A
- Drain-source On Resistance-Max0.05Ohm
- Pulsed Drain Current-Max (IDM)20A
- DS Breakdown Voltage-Min30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs)1.4W
- FET FeatureStandard
- RoHS StatusROHS3 Compliant
IRF7303PBF Description
The IRF7303PBF is a Dual P-Channel HEXFET Power MOSFET in a SO-8 package, coming from Fifth Generation HEXFETs from International Rectifier that utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
IRF7303PBF Features
Generation V Technology
Ultra-Low On-Resistance
Dual N-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
IRF7303PBF Applications
High-speed power switching
Hard switched and high-frequency circuits
The IRF7303PBF is a Dual P-Channel HEXFET Power MOSFET in a SO-8 package, coming from Fifth Generation HEXFETs from International Rectifier that utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
IRF7303PBF Features
Generation V Technology
Ultra-Low On-Resistance
Dual N-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
IRF7303PBF Applications
High-speed power switching
Hard switched and high-frequency circuits
IRF7303PBF More Descriptions
Transistor MOSFET Negative Channel 30 Volt 4.9A 8-Pin SOIC T/R
Dual N-Channel 30 V 0.08 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC Tube
Transistor NPN Mos IRF7303/IRF7303PBF INTERNATIONAL RECTIFIER RoHS V=30 SO8
Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:4.9A; On Resistance, Rds(on):50mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, DUAL, NN, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.9A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:20A; Row Pitch:6.3mm; SMD Marking:F7303; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V
Dual N-Channel 30 V 0.08 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC Tube
Transistor NPN Mos IRF7303/IRF7303PBF INTERNATIONAL RECTIFIER RoHS V=30 SO8
Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:4.9A; On Resistance, Rds(on):50mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, DUAL, NN, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.9A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:20A; Row Pitch:6.3mm; SMD Marking:F7303; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V
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