Infineon Technologies IRF7301TRPBF

IRF7301TRPBF         Description    The fifth generation HEXFET of the International Rectifier Company adopts advanced technology to achieve the lowest possible on-resistance per silicon area. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient device for use in a variety of applications. SO-8 has been improved through a customized framework to enhance thermal characteristics and multi-chip capabilities, making it an ideal choice for a variety of power applications. With these improvements, a variety of devices can be used in applications that significantly reduce circuit board space. The package is designed for gas phase, infrared or wave soldering technology. In a typical PCB installation application, it is possible to consume more than 0.8W.
IRF7301TRPBF       Features
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape&Reel  Dynamic dv/dt Rating Fast Switching  Lead-Free    IRF7301TRPBF       Applications provides designers with an extremely efficient device for use in a variety of applications.