IR IRF1405Spbf
- Part Number:
- IRF1405Spbf
- Manufacturer:
- IR
- Ventron No:
- 6002821-IRF1405Spbf
- Description:
- ORIGINAL IN STOCK
- Datasheet:
- IRF1405(S,L)PbF
We can supply IRF1405Spbf, use the request quote form to request IRF1405Spbf pirce, Datasheet PDF and lead time.ventronchip.com is a professional electronic components distributor. With 3 Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IRF1405Spbf.The price and lead time for IRF1405Spbf depending on the quantity required, availability and warehouse location.
IRF1405Spbf More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 4.6Milliohms;ID 131A;D2Pak;PD 200W;VGS /-2
Trans MOSFET N-CH Si 55V 131A 3-Pin(2 Tab) D2PAK Tube / MOSFET N-CH 55V 131A D2PAK
Single N-Channel 55 V 5.3 mOhm 170 nC HEXFET® Power Mosfet - D2PAK
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
N Channel Mosfet, 55V, 131A, D2-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:131A; On Resistance Rds(On):0.0053Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
MOSFET, N, 55V, 131A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:131A; Resistance, Rds On:0.0053ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Case Style, Alternate:D2-PAK; Current, Idm Pulse:680A; Power Dissipation:200W; Power, Pd:200W; Resistance, Rds on @ Vgs = 10V:0.0053ohm; Thermal Resistance, Junction to Case A:0.75°C/W; Voltage, Vds:55V; Voltage, Vds Max:55V; Voltage, Vgs th Max:4V
Trans MOSFET N-CH Si 55V 131A 3-Pin(2 Tab) D2PAK Tube / MOSFET N-CH 55V 131A D2PAK
Single N-Channel 55 V 5.3 mOhm 170 nC HEXFET® Power Mosfet - D2PAK
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
N Channel Mosfet, 55V, 131A, D2-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:131A; On Resistance Rds(On):0.0053Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
MOSFET, N, 55V, 131A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:131A; Resistance, Rds On:0.0053ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Case Style, Alternate:D2-PAK; Current, Idm Pulse:680A; Power Dissipation:200W; Power, Pd:200W; Resistance, Rds on @ Vgs = 10V:0.0053ohm; Thermal Resistance, Junction to Case A:0.75°C/W; Voltage, Vds:55V; Voltage, Vds Max:55V; Voltage, Vgs th Max:4V
The three parts on the right have similar specifications to IRF1405Spbf.
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ImagePart NumberManufacturerVgs(th) (Max) @ Id:Vgs (Max):Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Other Names:Operating Temperature:Mounting Type:Moisture Sensitivity Level (MSL):Lead Free Status / RoHS Status:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drive Voltage (Max Rds On, Min Rds On):Drain to Source Voltage (Vdss):Detailed Description:Current - Continuous Drain (Id) @ 25°C:View Compare
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IRF1405SpbfIR-----------------------
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IR4V @ 100µA±20VMOSFET (Metal Oxide)D2PAKHEXFET®8.5 mOhm @ 51A, 10V140W (Tc)Tape & Reel (TR)TO-263-3, D²Pak (2 Leads Tab), TO-263ABIRF1010EZSTRLPTR
SP001561470-55°C ~ 175°C (TJ)Surface Mount1 (Unlimited)Lead free / RoHS Compliant2810pF @ 25V86nC @ 10VN-Channel-10V60VN-Channel 60V 75A (Tc) 140W (Tc) Surface Mount D2PAK75A (Tc) -
IR4V @ 250µA±20VMOSFET (Metal Oxide)D2PAKHEXFET®36 mOhm @ 22A, 10V3.8W (Ta), 160W (Tc)TubeTO-263-3, D²Pak (2 Leads Tab), TO-263AB*IRF1310NSPBF
SP001561414-55°C ~ 175°C (TJ)Surface Mount1 (Unlimited)Lead free / RoHS Compliant1900pF @ 25V110nC @ 10VN-Channel-10V100VN-Channel 100V 42A (Tc) 3.8W (Ta), 160W (Tc) Surface Mount D2PAK42A (Tc) -
IR4V @ 250µA±20VMOSFET (Metal Oxide)D2PAKHEXFET®1.65 mOhm @ 195A, 10V300W (Tc)TubeTO-263-3, D²Pak (2 Leads Tab), TO-263ABSP001571208-55°C ~ 175°C (TJ)Surface Mount1 (Unlimited)Lead free / RoHS Compliant7590pF @ 24V240nC @ 10VN-Channel-10V24VN-Channel 24V 195A (Tc) 300W (Tc) Surface Mount D2PAK195A (Tc)
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