IR IRF1310NSPBF

Part Number:: IRF1310NSPBF

Manufacturer:: IR

Ventron No:: 6274820-IRF1310NSPBF

Description:

ECAD Model:

Datasheet:: IRF1310NSPBF

Specifications

IR IRF1310NSPBF technical specifications, attributes, parameters and parts with similar specifications to IR IRF1310NSPBF.

Vgs(th) (Max) @ Id:
4V @ 250µA
Vgs (Max):
±20V
Technology:
MOSFET (Metal Oxide)
Supplier Device Package:
D2PAK
Series:
HEXFET®
Rds On (Max) @ Id, Vgs:
36 mOhm @ 22A, 10V
Power Dissipation (Max):
3.8W (Ta), 160W (Tc)
Packaging:
Tube
Package / Case:
TO-263-3, D²Pak (2 Leads Tab), TO-263AB
Other Names:
*IRF1310NSPBF
SP001561414
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:
1900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
110nC @ 10V
FET Type:
N-Channel
FET Feature:
-
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
100V
Detailed Description:
N-Channel 100V 42A (Tc) 3.8W (Ta), 160W (Tc) Surface Mount D2PAK
Current - Continuous Drain (Id) @ 25°C:
42A (Tc)

Description

Images are for reference only.See Product Specifications for product details.If you are interested to buy IRF1310NSPBF.

IRF1310NSPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;D2Pak;PD 160W;VGS /-20V
Single N-Channel 100 V 0.036 Ohm 110 nC HEXFET® Power Mosfet - D2PAK
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 3.8 W
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 1.0uF 35volts *Derate Voltage/Temp
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:42A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes
MOSFET, N, 100V, 42A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:42A; Resistance, Rds On:0.036ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:140A; Power Dissipation:160W; Power Dissipation on 1 Sq. PCB:3.8W; Power, Pd:160W; SMD Marking:IRF1310NS; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.95°C/W; Voltage, Vds:100V; Voltage, Vds Max:100V; Voltage, Vgs th Max:4V

Product Comparison

The three parts on the right have similar specifications to IRF1310NSPBF.

Image

Part Number

Manufacturer

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Other Names:

Operating Temperature:

Mounting Type:

Moisture Sensitivity Level (MSL):

Lead Free Status / RoHS Status:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Detailed Description:

Current - Continuous Drain (Id) @ 25°C:

View Compare
IRF1310NSPBF

IR

4V @ 250µA

±20V

MOSFET (Metal Oxide)

D2PAK

HEXFET®

36 mOhm @ 22A, 10V

3.8W (Ta), 160W (Tc)

Tube

TO-263-3, D²Pak (2 Leads Tab), TO-263AB

*IRF1310NSPBF
SP001561414

-55°C ~ 175°C (TJ)

Surface Mount

1 (Unlimited)

Lead free / RoHS Compliant

1900pF @ 25V

110nC @ 10V

N-Channel

-

10V

100V

N-Channel 100V 42A (Tc) 3.8W (Ta), 160W (Tc) Surface Mount D2PAK

42A (Tc)

-
IRF1010EZSTRLP

IR

4V @ 100µA

±20V

MOSFET (Metal Oxide)

D2PAK

HEXFET®

8.5 mOhm @ 51A, 10V

140W (Tc)

Tape & Reel (TR)

TO-263-3, D²Pak (2 Leads Tab), TO-263AB

IRF1010EZSTRLPTR
SP001561470

-55°C ~ 175°C (TJ)

Surface Mount

1 (Unlimited)

Lead free / RoHS Compliant

2810pF @ 25V

86nC @ 10V

N-Channel

-

10V

60V

N-Channel 60V 75A (Tc) 140W (Tc) Surface Mount D2PAK

75A (Tc)

IRF1310NSPBF vs IRF1010EZSTRLP
IRF1324SPBF

IR

4V @ 250µA

±20V

MOSFET (Metal Oxide)

D2PAK

HEXFET®

1.65 mOhm @ 195A, 10V

300W (Tc)

Tube

TO-263-3, D²Pak (2 Leads Tab), TO-263AB

SP001571208

-55°C ~ 175°C (TJ)

Surface Mount

1 (Unlimited)

Lead free / RoHS Compliant

7590pF @ 24V

240nC @ 10V

N-Channel

-

10V

24V

N-Channel 24V 195A (Tc) 300W (Tc) Surface Mount D2PAK

195A (Tc)

IRF1310NSPBF vs IRF1324SPBF
IRF1018ESTRLPBF

IR

4V @ 100µA

±20V

MOSFET (Metal Oxide)

D2PAK

HEXFET®

8.4 mOhm @ 47A, 10V

110W (Tc)

Tape & Reel (TR)

TO-263-3, D²Pak (2 Leads Tab), TO-263AB

IRF1018ESTRLPBFTR
SP001564496

-55°C ~ 175°C (TJ)

Surface Mount

1 (Unlimited)

Lead free / RoHS Compliant

2290pF @ 50V

69nC @ 10V

N-Channel

-

10V

60V

N-Channel 60V 79A (Tc) 110W (Tc) Surface Mount D2PAK

79A (Tc)

IRF1310NSPBF vs IRF1018ESTRLPBF