IR IRF1018ESTRLPBF

Part Number:: IRF1018ESTRLPBF

Manufacturer:: IR

Ventron No:: 6201597-IRF1018ESTRLPBF

Description:

ECAD Model:

Datasheet:: IRF1018ESTRLPBF

Specifications

IR IRF1018ESTRLPBF technical specifications, attributes, parameters and parts with similar specifications to IR IRF1018ESTRLPBF.

Vgs(th) (Max) @ Id:
4V @ 100µA
Vgs (Max):
±20V
Technology:
MOSFET (Metal Oxide)
Supplier Device Package:
D2PAK
Series:
HEXFET®
Rds On (Max) @ Id, Vgs:
8.4 mOhm @ 47A, 10V
Power Dissipation (Max):
110W (Tc)
Packaging:
Tape & Reel (TR)
Package / Case:
TO-263-3, D²Pak (2 Leads Tab), TO-263AB
Other Names:
IRF1018ESTRLPBFTR
SP001564496
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:
2290pF @ 50V
Gate Charge (Qg) (Max) @ Vgs:
69nC @ 10V
FET Type:
N-Channel
FET Feature:
-
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
60V
Detailed Description:
N-Channel 60V 79A (Tc) 110W (Tc) Surface Mount D2PAK
Current - Continuous Drain (Id) @ 25°C:
79A (Tc)

Description

part#IRF1018ESTRLPBF, Manufacturer: is available at ventronchip.com, see description of IRF1018ESTRLPBF as below .use the request quote form to request IRF1018ESTRLPBF price and lead time.Every pieces of Electronic Components you buy from ventronchip.com is warranty and quality guaranted.we are an independent distributor of electronic components with extensive inventory in stock.The price and lead time for IRF1018ESTRLPBF depending on the quantity required, availability and warehouse location.

IRF1018ESTRLPBF More Descriptions

Single N-Channel 60 V 8.4 mOhm 69 nC HEXFET® Power Mosfet - D2PAK
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET N-CH 60V 79A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
MOSFET, N-CH, 60V, 79A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 79A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0071ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 79 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 8.4 / Gate-Source Voltage V = 20 / Fall Time ns = 46 / Rise Time ns = 35 / Turn-OFF Delay Time ns = 55 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110

Product Comparison

The three parts on the right have similar specifications to IRF1018ESTRLPBF.

Image

Part Number

Manufacturer

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Other Names:

Operating Temperature:

Mounting Type:

Moisture Sensitivity Level (MSL):

Lead Free Status / RoHS Status:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Detailed Description:

Current - Continuous Drain (Id) @ 25°C:

View Compare
IRF1018ESTRLPBF

IR

4V @ 100µA

±20V

MOSFET (Metal Oxide)

D2PAK

HEXFET®

8.4 mOhm @ 47A, 10V

110W (Tc)

Tape & Reel (TR)

TO-263-3, D²Pak (2 Leads Tab), TO-263AB

IRF1018ESTRLPBFTR
SP001564496

-55°C ~ 175°C (TJ)

Surface Mount

1 (Unlimited)

Lead free / RoHS Compliant

2290pF @ 50V

69nC @ 10V

N-Channel

-

10V

60V

N-Channel 60V 79A (Tc) 110W (Tc) Surface Mount D2PAK

79A (Tc)

-
IRF1010Z

IR

4V @ 250µA

±20V

MOSFET (Metal Oxide)

TO-220AB

HEXFET®

7.5 mOhm @ 75A, 10V

140W (Tc)

Tube

TO-220-3

*IRF1010Z

-55°C ~ 175°C (TJ)

Through Hole

1 (Unlimited)

Contains lead / RoHS non-compliant

2840pF @ 25V

95nC @ 10V

N-Channel

-

10V

55V

N-Channel 55V 75A (Tc) 140W (Tc) Through Hole TO-220AB

75A (Tc)

IRF1018ESTRLPBF vs IRF1010Z
IRF1010EZSTRLP

IR

4V @ 100µA

±20V

MOSFET (Metal Oxide)

D2PAK

HEXFET®

8.5 mOhm @ 51A, 10V

140W (Tc)

Tape & Reel (TR)

TO-263-3, D²Pak (2 Leads Tab), TO-263AB

IRF1010EZSTRLPTR
SP001561470

-55°C ~ 175°C (TJ)

Surface Mount

1 (Unlimited)

Lead free / RoHS Compliant

2810pF @ 25V

86nC @ 10V

N-Channel

-

10V

60V

N-Channel 60V 75A (Tc) 140W (Tc) Surface Mount D2PAK

75A (Tc)

IRF1018ESTRLPBF vs IRF1010EZSTRLP
IRF1310NSPBF

IR

4V @ 250µA

±20V

MOSFET (Metal Oxide)

D2PAK

HEXFET®

36 mOhm @ 22A, 10V

3.8W (Ta), 160W (Tc)

Tube

TO-263-3, D²Pak (2 Leads Tab), TO-263AB

*IRF1310NSPBF
SP001561414

-55°C ~ 175°C (TJ)

Surface Mount

1 (Unlimited)

Lead free / RoHS Compliant

1900pF @ 25V

110nC @ 10V

N-Channel

-

10V

100V

N-Channel 100V 42A (Tc) 3.8W (Ta), 160W (Tc) Surface Mount D2PAK

42A (Tc)

IRF1018ESTRLPBF vs IRF1310NSPBF