IRF1324S

IR IRF1324S

Part Number:
IRF1324S
Manufacturer:
IR
Ventron No:
6330841-IRF1324S
Description:
ECAD Model:
Datasheet:
IRF1324S

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Specifications
IR IRF1324S technical specifications, attributes, parameters and parts with similar specifications to IR IRF1324S.
  • Surface Mount
    YES
  • Number of Terminals
    2
  • Transistor Element Material
    SILICON
  • ECCN Code
    EAR99
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Operating Temperature (Max)
    175°C
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    N-CHANNEL
  • JEDEC-95 Code
    TO-263AB
  • Drain Current-Max (Abs) (ID)
    195A
  • Drain-source On Resistance-Max
    0.0165Ohm
  • Pulsed Drain Current-Max (IDM)
    1420A
  • DS Breakdown Voltage-Min
    24V
  • Avalanche Energy Rating (Eas)
    270 mJ
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
Description
IRF1324S Overview
This product is manufactured by IR and belongs to the category of Housingless Welding Diode. The images we provide are for reference only, for detailed product information please see specification sheet IRF1324S or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRF1324S. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
Product Comparison
The three parts on the right have similar specifications to IRF1324S.
  • Image
    Part Number
    Manufacturer
    Surface Mount
    Number of Terminals
    Transistor Element Material
    ECCN Code
    Terminal Position
    Terminal Form
    Pin Count
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Polarity/Channel Type
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    FET Technology
    Vgs(th) (Max) @ Id:
    Vgs (Max):
    Technology:
    Supplier Device Package:
    Series:
    Rds On (Max) @ Id, Vgs:
    Power Dissipation (Max):
    Packaging:
    Package / Case:
    Other Names:
    Operating Temperature:
    Mounting Type:
    Moisture Sensitivity Level (MSL):
    Lead Free Status / RoHS Status:
    Input Capacitance (Ciss) (Max) @ Vds:
    Gate Charge (Qg) (Max) @ Vgs:
    FET Type:
    FET Feature:
    Drive Voltage (Max Rds On, Min Rds On):
    Drain to Source Voltage (Vdss):
    Detailed Description:
    Current - Continuous Drain (Id) @ 25°C:
    View Compare
  • IRF1324S
    IRF1324S
    IR
    YES
    2
    SILICON
    EAR99
    SINGLE
    GULL WING
    3
    R-PSSO-G2
    Not Qualified
    175°C
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    N-CHANNEL
    TO-263AB
    195A
    0.0165Ohm
    1420A
    24V
    270 mJ
    METAL-OXIDE SEMICONDUCTOR
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF1310NSPBF
    IR
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4V @ 250µA
    ±20V
    MOSFET (Metal Oxide)
    D2PAK
    HEXFET®
    36 mOhm @ 22A, 10V
    3.8W (Ta), 160W (Tc)
    Tube
    TO-263-3, D²Pak (2 Leads Tab), TO-263AB
    *IRF1310NSPBF
    SP001561414
    -55°C ~ 175°C (TJ)
    Surface Mount
    1 (Unlimited)
    Lead free / RoHS Compliant
    1900pF @ 25V
    110nC @ 10V
    N-Channel
    -
    10V
    100V
    N-Channel 100V 42A (Tc) 3.8W (Ta), 160W (Tc) Surface Mount D2PAK
    42A (Tc)
  • IRF1324SPBF
    IR
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4V @ 250µA
    ±20V
    MOSFET (Metal Oxide)
    D2PAK
    HEXFET®
    1.65 mOhm @ 195A, 10V
    300W (Tc)
    Tube
    TO-263-3, D²Pak (2 Leads Tab), TO-263AB
    SP001571208
    -55°C ~ 175°C (TJ)
    Surface Mount
    1 (Unlimited)
    Lead free / RoHS Compliant
    7590pF @ 24V
    240nC @ 10V
    N-Channel
    -
    10V
    24V
    N-Channel 24V 195A (Tc) 300W (Tc) Surface Mount D2PAK
    195A (Tc)
  • IRF1018ESTRLPBF
    IR
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4V @ 100µA
    ±20V
    MOSFET (Metal Oxide)
    D2PAK
    HEXFET®
    8.4 mOhm @ 47A, 10V
    110W (Tc)
    Tape & Reel (TR)
    TO-263-3, D²Pak (2 Leads Tab), TO-263AB
    IRF1018ESTRLPBFTR
    SP001564496
    -55°C ~ 175°C (TJ)
    Surface Mount
    1 (Unlimited)
    Lead free / RoHS Compliant
    2290pF @ 50V
    69nC @ 10V
    N-Channel
    -
    10V
    60V
    N-Channel 60V 79A (Tc) 110W (Tc) Surface Mount D2PAK
    79A (Tc)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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