IR IRF1324SPBF
- Part Number:
- IRF1324SPBF
- Manufacturer:
- IR
- Ventron No:
- 6262420-IRF1324SPBF
- Description:
- Datasheet:
- IRF1324(L,S)PBF
IR IRF1324SPBF technical specifications, attributes, parameters and parts with similar specifications to IR IRF1324SPBF.
- Vgs(th) (Max) @ Id:4V @ 250µA
- Vgs (Max):±20V
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:D2PAK
- Series:HEXFET®
- Rds On (Max) @ Id, Vgs:1.65 mOhm @ 195A, 10V
- Power Dissipation (Max):300W (Tc)
- Packaging:Tube
- Package / Case:TO-263-3, D²Pak (2 Leads Tab), TO-263AB
- Other Names:SP001571208
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Lead Free Status / RoHS Status:Lead free / RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds:7590pF @ 24V
- Gate Charge (Qg) (Max) @ Vgs:240nC @ 10V
- FET Type:N-Channel
- FET Feature:-
- Drive Voltage (Max Rds On, Min Rds On):10V
- Drain to Source Voltage (Vdss):24V
- Detailed Description:N-Channel 24V 195A (Tc) 300W (Tc) Surface Mount D2PAK
- Current - Continuous Drain (Id) @ 25°C:195A (Tc)
part No. IRF1324SPBF Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.
IRF1324SPBF More Descriptions
MOSFET Operating temperature: -55... 175 °C Housing type: D2PAK Polarity: N Power dissipation: 300 W
24V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package
Trans MOSFET N-CH Si 24V 340A 3-Pin(2 Tab) D2PAK
Power Field-Effect Transistor, 195A I(D), 24V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH 24V 195A D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:24V; On Resistance Rds(on):1.65mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:340A; Package / Case:D2-PAK; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:24V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
24V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package
Trans MOSFET N-CH Si 24V 340A 3-Pin(2 Tab) D2PAK
Power Field-Effect Transistor, 195A I(D), 24V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH 24V 195A D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:24V; On Resistance Rds(on):1.65mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:340A; Package / Case:D2-PAK; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:24V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
The three parts on the right have similar specifications to IRF1324SPBF.
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ImagePart NumberManufacturerVgs(th) (Max) @ Id:Vgs (Max):Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Other Names:Operating Temperature:Mounting Type:Moisture Sensitivity Level (MSL):Lead Free Status / RoHS Status:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drive Voltage (Max Rds On, Min Rds On):Drain to Source Voltage (Vdss):Detailed Description:Current - Continuous Drain (Id) @ 25°C:View Compare
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IRF1324SPBFIR4V @ 250µA±20VMOSFET (Metal Oxide)D2PAKHEXFET®1.65 mOhm @ 195A, 10V300W (Tc)TubeTO-263-3, D²Pak (2 Leads Tab), TO-263ABSP001571208-55°C ~ 175°C (TJ)Surface Mount1 (Unlimited)Lead free / RoHS Compliant7590pF @ 24V240nC @ 10VN-Channel-10V24VN-Channel 24V 195A (Tc) 300W (Tc) Surface Mount D2PAK195A (Tc)-
-
IR4V @ 100µA±20VMOSFET (Metal Oxide)D2PAKHEXFET®8.5 mOhm @ 51A, 10V140W (Tc)Tape & Reel (TR)TO-263-3, D²Pak (2 Leads Tab), TO-263ABIRF1010EZSTRLPTR
SP001561470-55°C ~ 175°C (TJ)Surface Mount1 (Unlimited)Lead free / RoHS Compliant2810pF @ 25V86nC @ 10VN-Channel-10V60VN-Channel 60V 75A (Tc) 140W (Tc) Surface Mount D2PAK75A (Tc) -
IR4V @ 250µA±20VMOSFET (Metal Oxide)D2PAKHEXFET®36 mOhm @ 22A, 10V3.8W (Ta), 160W (Tc)TubeTO-263-3, D²Pak (2 Leads Tab), TO-263AB*IRF1310NSPBF
SP001561414-55°C ~ 175°C (TJ)Surface Mount1 (Unlimited)Lead free / RoHS Compliant1900pF @ 25V110nC @ 10VN-Channel-10V100VN-Channel 100V 42A (Tc) 3.8W (Ta), 160W (Tc) Surface Mount D2PAK42A (Tc) -
IR4V @ 100µA±20VMOSFET (Metal Oxide)D2PAKHEXFET®8.4 mOhm @ 47A, 10V110W (Tc)Tape & Reel (TR)TO-263-3, D²Pak (2 Leads Tab), TO-263ABIRF1018ESTRLPBFTR
SP001564496-55°C ~ 175°C (TJ)Surface Mount1 (Unlimited)Lead free / RoHS Compliant2290pF @ 50V69nC @ 10VN-Channel-10V60VN-Channel 60V 79A (Tc) 110W (Tc) Surface Mount D2PAK79A (Tc)
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