IRF1010Z

IR IRF1010Z

Part Number:
IRF1010Z
Manufacturer:
IR
Ventron No:
6304072-IRF1010Z
Description:
ECAD Model:
Datasheet:
IRF1010Z

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Specifications
IR IRF1010Z technical specifications, attributes, parameters and parts with similar specifications to IR IRF1010Z.
  • Vgs(th) (Max) @ Id:
    4V @ 250µA
  • Vgs (Max):
    ±20V
  • Technology:
    MOSFET (Metal Oxide)
  • Supplier Device Package:
    TO-220AB
  • Series:
    HEXFET®
  • Rds On (Max) @ Id, Vgs:
    7.5 mOhm @ 75A, 10V
  • Power Dissipation (Max):
    140W (Tc)
  • Packaging:
    Tube
  • Package / Case:
    TO-220-3
  • Other Names:
    *IRF1010Z
  • Operating Temperature:
    -55°C ~ 175°C (TJ)
  • Mounting Type:
    Through Hole
  • Moisture Sensitivity Level (MSL):
    1 (Unlimited)
  • Lead Free Status / RoHS Status:
    Contains lead / RoHS non-compliant
  • Input Capacitance (Ciss) (Max) @ Vds:
    2840pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs:
    95nC @ 10V
  • FET Type:
    N-Channel
  • FET Feature:
    -
  • Drive Voltage (Max Rds On, Min Rds On):
    10V
  • Drain to Source Voltage (Vdss):
    55V
  • Detailed Description:
    N-Channel 55V 75A (Tc) 140W (Tc) Through Hole TO-220AB
  • Current - Continuous Drain (Id) @ 25°C:
    75A (Tc)
Description
part No. IRF1010Z Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.
Product Comparison
The three parts on the right have similar specifications to IRF1010Z.
  • Image
    Part Number
    Manufacturer
    Vgs(th) (Max) @ Id:
    Vgs (Max):
    Technology:
    Supplier Device Package:
    Series:
    Rds On (Max) @ Id, Vgs:
    Power Dissipation (Max):
    Packaging:
    Package / Case:
    Other Names:
    Operating Temperature:
    Mounting Type:
    Moisture Sensitivity Level (MSL):
    Lead Free Status / RoHS Status:
    Input Capacitance (Ciss) (Max) @ Vds:
    Gate Charge (Qg) (Max) @ Vgs:
    FET Type:
    FET Feature:
    Drive Voltage (Max Rds On, Min Rds On):
    Drain to Source Voltage (Vdss):
    Detailed Description:
    Current - Continuous Drain (Id) @ 25°C:
    View Compare
  • IRF1010Z
    IRF1010Z
    IR
    4V @ 250µA
    ±20V
    MOSFET (Metal Oxide)
    TO-220AB
    HEXFET®
    7.5 mOhm @ 75A, 10V
    140W (Tc)
    Tube
    TO-220-3
    *IRF1010Z
    -55°C ~ 175°C (TJ)
    Through Hole
    1 (Unlimited)
    Contains lead / RoHS non-compliant
    2840pF @ 25V
    95nC @ 10V
    N-Channel
    -
    10V
    55V
    N-Channel 55V 75A (Tc) 140W (Tc) Through Hole TO-220AB
    75A (Tc)
    -
  • IRF1010EZSTRLP
    IR
    4V @ 100µA
    ±20V
    MOSFET (Metal Oxide)
    D2PAK
    HEXFET®
    8.5 mOhm @ 51A, 10V
    140W (Tc)
    Tape & Reel (TR)
    TO-263-3, D²Pak (2 Leads Tab), TO-263AB
    IRF1010EZSTRLPTR
    SP001561470
    -55°C ~ 175°C (TJ)
    Surface Mount
    1 (Unlimited)
    Lead free / RoHS Compliant
    2810pF @ 25V
    86nC @ 10V
    N-Channel
    -
    10V
    60V
    N-Channel 60V 75A (Tc) 140W (Tc) Surface Mount D2PAK
    75A (Tc)
  • IRF1310NSPBF
    IR
    4V @ 250µA
    ±20V
    MOSFET (Metal Oxide)
    D2PAK
    HEXFET®
    36 mOhm @ 22A, 10V
    3.8W (Ta), 160W (Tc)
    Tube
    TO-263-3, D²Pak (2 Leads Tab), TO-263AB
    *IRF1310NSPBF
    SP001561414
    -55°C ~ 175°C (TJ)
    Surface Mount
    1 (Unlimited)
    Lead free / RoHS Compliant
    1900pF @ 25V
    110nC @ 10V
    N-Channel
    -
    10V
    100V
    N-Channel 100V 42A (Tc) 3.8W (Ta), 160W (Tc) Surface Mount D2PAK
    42A (Tc)
  • IRF1324SPBF
    IR
    4V @ 250µA
    ±20V
    MOSFET (Metal Oxide)
    D2PAK
    HEXFET®
    1.65 mOhm @ 195A, 10V
    300W (Tc)
    Tube
    TO-263-3, D²Pak (2 Leads Tab), TO-263AB
    SP001571208
    -55°C ~ 175°C (TJ)
    Surface Mount
    1 (Unlimited)
    Lead free / RoHS Compliant
    7590pF @ 24V
    240nC @ 10V
    N-Channel
    -
    10V
    24V
    N-Channel 24V 195A (Tc) 300W (Tc) Surface Mount D2PAK
    195A (Tc)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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