IR IRF1404LPBF
- Part Number:
- IRF1404LPBF
- Manufacturer:
- IR
- Ventron No:
- 6166762-IRF1404LPBF
- Description:
- Datasheet:
- IRF1404LPBF
IR IRF1404LPBF technical specifications, attributes, parameters and parts with similar specifications to IR IRF1404LPBF.
- Vgs(th) (Max) @ Id:4V @ 250µA
- Vgs (Max):±20V
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:TO-262
- Series:HEXFET®
- Rds On (Max) @ Id, Vgs:4 mOhm @ 95A, 10V
- Power Dissipation (Max):3.8W (Ta), 200W (Tc)
- Packaging:Tube
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
- Other Names:*IRF1404LPBF
SP001576598 - Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Lead Free Status / RoHS Status:Lead free / RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds:7360pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:200nC @ 10V
- FET Type:N-Channel
- FET Feature:-
- Drive Voltage (Max Rds On, Min Rds On):10V
- Drain to Source Voltage (Vdss):40V
- Detailed Description:N-Channel 40V 162A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-262
- Current - Continuous Drain (Id) @ 25°C:162A (Tc)
part No. IRF1404LPBF Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.
IRF1404LPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.0035Ohm;ID 162A;TO-262;PD 200W;VGS /-20V
Single N-Channel 40 V 0.004 Ohm 160 nC HEXFET® Power Mosfet - TO-262
Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
N CHANNEL MOSFET, 40V, 162A, TO-262; Tra; N CHANNEL MOSFET, 40V, 162A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:162A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V
Single N-Channel 40 V 0.004 Ohm 160 nC HEXFET® Power Mosfet - TO-262
Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
N CHANNEL MOSFET, 40V, 162A, TO-262; Tra; N CHANNEL MOSFET, 40V, 162A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:162A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V
The three parts on the right have similar specifications to IRF1404LPBF.
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ImagePart NumberManufacturerVgs(th) (Max) @ Id:Vgs (Max):Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Other Names:Operating Temperature:Mounting Type:Moisture Sensitivity Level (MSL):Lead Free Status / RoHS Status:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drive Voltage (Max Rds On, Min Rds On):Drain to Source Voltage (Vdss):Detailed Description:Current - Continuous Drain (Id) @ 25°C:View Compare
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IRF1404LPBFIR4V @ 250µA±20VMOSFET (Metal Oxide)TO-262HEXFET®4 mOhm @ 95A, 10V3.8W (Ta), 200W (Tc)TubeTO-262-3 Long Leads, I²Pak, TO-262AA*IRF1404LPBF
SP001576598-55°C ~ 175°C (TJ)Through Hole1 (Unlimited)Lead free / RoHS Compliant7360pF @ 25V200nC @ 10VN-Channel-10V40VN-Channel 40V 162A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-262162A (Tc)- -
IR4V @ 100µA±20VMOSFET (Metal Oxide)D2PAKHEXFET®8.5 mOhm @ 51A, 10V140W (Tc)Tape & Reel (TR)TO-263-3, D²Pak (2 Leads Tab), TO-263ABIRF1010EZSTRLPTR
SP001561470-55°C ~ 175°C (TJ)Surface Mount1 (Unlimited)Lead free / RoHS Compliant2810pF @ 25V86nC @ 10VN-Channel-10V60VN-Channel 60V 75A (Tc) 140W (Tc) Surface Mount D2PAK75A (Tc) -
IR4V @ 250µA±20VMOSFET (Metal Oxide)D2PAKHEXFET®36 mOhm @ 22A, 10V3.8W (Ta), 160W (Tc)TubeTO-263-3, D²Pak (2 Leads Tab), TO-263AB*IRF1310NSPBF
SP001561414-55°C ~ 175°C (TJ)Surface Mount1 (Unlimited)Lead free / RoHS Compliant1900pF @ 25V110nC @ 10VN-Channel-10V100VN-Channel 100V 42A (Tc) 3.8W (Ta), 160W (Tc) Surface Mount D2PAK42A (Tc) -
IR4V @ 100µA±20VMOSFET (Metal Oxide)D2PAKHEXFET®8.4 mOhm @ 47A, 10V110W (Tc)Tape & Reel (TR)TO-263-3, D²Pak (2 Leads Tab), TO-263ABIRF1018ESTRLPBFTR
SP001564496-55°C ~ 175°C (TJ)Surface Mount1 (Unlimited)Lead free / RoHS Compliant2290pF @ 50V69nC @ 10VN-Channel-10V60VN-Channel 60V 79A (Tc) 110W (Tc) Surface Mount D2PAK79A (Tc)
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