IR IRF1010EL

Part Number:: IRF1010EL

Manufacturer:: IR

Ventron No:: 6095443-IRF1010EL

Description:

ECAD Model:

Datasheet:: IRF1010EL

Specifications

IR IRF1010EL technical specifications, attributes, parameters and parts with similar specifications to IR IRF1010EL.

Vgs(th) (Max) @ Id:
4V @ 250µA
Vgs (Max):
±20V
Technology:
MOSFET (Metal Oxide)
Supplier Device Package:
TO-262
Series:
HEXFET®
Rds On (Max) @ Id, Vgs:
12 mOhm @ 50A, 10V
Power Dissipation (Max):
200W (Tc)
Packaging:
Tube
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Other Names:
*IRF1010EL
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Lead Free Status / RoHS Status:
Contains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds:
3210pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
130nC @ 10V
FET Type:
N-Channel
FET Feature:
-
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
60V
Detailed Description:
N-Channel 60V 84A (Tc) 200W (Tc) Through Hole TO-262
Current - Continuous Drain (Id) @ 25°C:
84A (Tc)

Description

We can supply IRF1010EL, use the request quote form to request IRF1010EL pirce, Datasheet PDF and lead time.ventronchip.com is a professional electronic components distributor. With 3 Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IRF1010EL.The price and lead time for IRF1010EL depending on the quantity required, availability and warehouse location.

IRF1010EL More Descriptions

MOSFET, 60V, 83A, 12 mOhm, 86.6 nC Qg, TO-262
MOSFET N-CH 60V 84A TO-262

Product Comparison

The three parts on the right have similar specifications to IRF1010EL.

Image

Part Number

Manufacturer

Vgs(th) (Max) @ Id:

Vgs (Max):

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Other Names:

Operating Temperature:

Mounting Type:

Moisture Sensitivity Level (MSL):

Lead Free Status / RoHS Status:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drive Voltage (Max Rds On, Min Rds On):

Drain to Source Voltage (Vdss):

Detailed Description:

Current - Continuous Drain (Id) @ 25°C:

View Compare
IRF1010EL

IR

4V @ 250µA

±20V

MOSFET (Metal Oxide)

TO-262

HEXFET®

12 mOhm @ 50A, 10V

200W (Tc)

Tube

TO-262-3 Long Leads, I²Pak, TO-262AA

*IRF1010EL

-55°C ~ 175°C (TJ)

Through Hole

1 (Unlimited)

Contains lead / RoHS non-compliant

3210pF @ 25V

130nC @ 10V

N-Channel

-

10V

60V

N-Channel 60V 84A (Tc) 200W (Tc) Through Hole TO-262

84A (Tc)

-
IRF1010EZSTRLP

IR

4V @ 100µA

±20V

MOSFET (Metal Oxide)

D2PAK

HEXFET®

8.5 mOhm @ 51A, 10V

140W (Tc)

Tape & Reel (TR)

TO-263-3, D²Pak (2 Leads Tab), TO-263AB

IRF1010EZSTRLPTR
SP001561470

-55°C ~ 175°C (TJ)

Surface Mount

1 (Unlimited)

Lead free / RoHS Compliant

2810pF @ 25V

86nC @ 10V

N-Channel

-

10V

60V

N-Channel 60V 75A (Tc) 140W (Tc) Surface Mount D2PAK

75A (Tc)

IRF1010EL vs IRF1010EZSTRLP
IRF1310NSPBF

IR

4V @ 250µA

±20V

MOSFET (Metal Oxide)

D2PAK

HEXFET®

36 mOhm @ 22A, 10V

3.8W (Ta), 160W (Tc)

Tube

TO-263-3, D²Pak (2 Leads Tab), TO-263AB

*IRF1310NSPBF
SP001561414

-55°C ~ 175°C (TJ)

Surface Mount

1 (Unlimited)

Lead free / RoHS Compliant

1900pF @ 25V

110nC @ 10V

N-Channel

-

10V

100V

N-Channel 100V 42A (Tc) 3.8W (Ta), 160W (Tc) Surface Mount D2PAK

42A (Tc)

IRF1010EL vs IRF1310NSPBF
IRF1324SPBF

IR

4V @ 250µA

±20V

MOSFET (Metal Oxide)

D2PAK

HEXFET®

1.65 mOhm @ 195A, 10V

300W (Tc)

Tube

TO-263-3, D²Pak (2 Leads Tab), TO-263AB

SP001571208

-55°C ~ 175°C (TJ)

Surface Mount

1 (Unlimited)

Lead free / RoHS Compliant

7590pF @ 24V

240nC @ 10V

N-Channel

-

10V

24V

N-Channel 24V 195A (Tc) 300W (Tc) Surface Mount D2PAK

195A (Tc)

IRF1010EL vs IRF1324SPBF