IPD50R950CE

Infineon Technologies IPD50R950CE

Part Number:
IPD50R950CE
Manufacturer:
Infineon Technologies
Ventron No:
2854173-IPD50R950CE
Description:
MOSFET N-CH 500V 4.3A PG-TO252
ECAD Model:
Datasheet:
IPD50R950CE

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Specifications
Infineon Technologies IPD50R950CE technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPD50R950CE.
  • Package / Case
    PG-TO252-3
  • Packaging
    Tape & Reel (TR)
  • RoHS Status
    RoHS Compliant
Description
IPD50R950CE Overview
This product is manufactured by Infineon Technologies and belongs to the category of obsolete (EOL) components. The images we provide are for reference only, for detailed product information please see specification sheet IPD50R950CE or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPD50R950CE. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
Product Comparison
The three parts on the right have similar specifications to IPD50R950CE.
  • Image
    Part Number
    Manufacturer
    Package / Case
    Packaging
    RoHS Status
    Mounting Type
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Reference Standard
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Factory Lead Time
    Mount
    Pbfree Code
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Element Configuration
    Power Dissipation
    Transistor Application
    Halogen Free
    Rise Time
    Polarity/Channel Type
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain to Source Breakdown Voltage
    FET Technology
    Drain to Source Resistance
    Lead Free
    View Compare
  • IPD50R950CE
    IPD50R950CE
    PG-TO252-3
    Tape & Reel (TR)
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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    -
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    -
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    -
    -
    -
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    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPD50N06S214ATMA1
    TO-252-3, DPak (2 Leads Tab), SC-63
    Tape & Reel (TR)
    ROHS3 Compliant
    Surface Mount
    YES
    SILICON
    -55°C~175°C TJ
    OptiMOS™
    2008
    Discontinued
    1 (Unlimited)
    2
    EAR99
    ULTRA-LOW RESISTANCE
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    AEC-Q101
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    136W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    14.4m Ω @ 32A, 10V
    4V @ 80μA
    1485pF @ 25V
    50A Tc
    52nC @ 10V
    55V
    10V
    ±20V
    50A
    0.0144Ohm
    200A
    55V
    240 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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    -
  • IPD50R800CEAUMA1
    DPAK
    Tape & Reel (TR)
    ROHS3 Compliant
    -
    -
    -
    -
    -
    2008
    Active
    3 (168 Hours)
    2
    EAR99
    -
    -
    -
    GULL WING
    -
    R-PSSO-G2
    1
    -
    -
    ENHANCEMENT MODE
    DRAIN
    -
    -
    -
    -
    -
    -
    500V
    -
    -
    -
    -
    -
    -
    83 mJ
    18 Weeks
    Surface Mount
    yes
    150°C
    -55°C
    40W
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    Single
    40W
    SWITCHING
    Halogen Free
    5.5ns
    N-CHANNEL
    15.9 ns
    26 ns
    5A
    TO-252
    20V
    500V
    550V
    METAL-OXIDE SEMICONDUCTOR
    800mOhm
    Contains Lead
  • IPD50R380CEATMA1
    TO-252-3, DPak (2 Leads Tab), SC-63
    Tape & Reel (TR)
    -
    Surface Mount
    -
    -
    -55°C~150°C TJ
    CoolMOS™ CE
    2013
    Obsolete
    3 (168 Hours)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    98W Tc
    -
    -
    N-Channel
    380m Ω @ 3.2A, 13V
    3.5V @ 260μA
    584pF @ 100V
    9.9A Tc
    24.8nC @ 10V
    500V
    13V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
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Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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