Infineon Technologies IPD50R800CEAUMA1

IPD50R800CEAUMA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 83 mJ.This device's continuous drain current (ID) is 5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 550V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 26 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 800mOhm.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 500V, it can supply the maximum voltage from two sources.This transistor requires a 500V drain to source voltage (Vdss).

IPD50R800CEAUMA1 Features
the avalanche energy rating (Eas) is 83 mJ
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 26 ns
single MOSFETs transistor is 800mOhm
a 500V drain to source voltage (Vdss)


IPD50R800CEAUMA1 Applications
There are a lot of Infineon Technologies
IPD50R800CEAUMA1 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples