STMicroelectronics HD1750FX
- Part Number:
- HD1750FX
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2466736-HD1750FX
- Description:
- TRANS NPN 800V 24A ISOWATT218
- Datasheet:
- HD1750FX
STMicroelectronics HD1750FX technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics HD1750FX.
- Lifecycle StatusNRND (Last Updated: 7 months ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseISOWATT218FX
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC800V
- Max Power Dissipation75W
- Current Rating24A
- Base Part NumberHD1750
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation75W
- Case ConnectionISOLATED
- Transistor ApplicationAMPLIFIER
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)800V
- Max Collector Current24A
- DC Current Gain (hFE) (Min) @ Ic, Vce6.5 @ 12A 5V
- Current - Collector Cutoff (Max)200μA
- Vce Saturation (Max) @ Ib, Ic3V @ 3A, 12A
- Collector Emitter Breakdown Voltage800V
- Collector Emitter Saturation Voltage3V
- Emitter Base Voltage (VEBO)10V
- hFE Min30
- Height26.7mm
- Length15.7mm
- Width5.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
HD1750FX Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 6.5 @ 12A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 3V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 3A, 12A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is 24A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 24A volts.
HD1750FX Features
the DC current gain for this device is 6.5 @ 12A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 10V
the current rating of this device is 24A
HD1750FX Applications
There are a lot of STMicroelectronics
HD1750FX applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 6.5 @ 12A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 3V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 3A, 12A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is 24A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 24A volts.
HD1750FX Features
the DC current gain for this device is 6.5 @ 12A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 10V
the current rating of this device is 24A
HD1750FX Applications
There are a lot of STMicroelectronics
HD1750FX applications of single BJT transistors.
Inverter
Interface
Driver
Muting
HD1750FX More Descriptions
High voltage NPN power transistor for high definition and new super slim CRT displays
HD1750FX Series NPN 800 V 24 A High Voltage Power Transistor - ISOWATT-218FX
Trans GP BJT NPN 800V 24A 75000mW 3-Pin(3 Tab) ISOWATT218FX Tube
Power Bipolar Transistor, 24A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN High Voltage 800Vceo Max.
Transistor NPN 800V 24A ISOWATT218FX
TRANSISTOR, BJT, NPN, 800V, 24A; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 800V; Transition Frequency ft: -; Power Dissipation Pd: 75W; DC Collector Current: 24A; DC Current Gain hFE: 6.5hFE; Transistor Cas
High Voltage Power Transistor, Npn, 800V, 24A, Isowatt218Fx; Transistor Polarity:Npn; Collector Emitter Voltage Max:800V; Continuous Collector Current:24A; Power Dissipation:75W; Transistor Mounting:Through Hole; No. Of Pins:3Pins Rohs Compliant: Yes |Stmicroelectronics HD1750FX
HD1750FX Series NPN 800 V 24 A High Voltage Power Transistor - ISOWATT-218FX
Trans GP BJT NPN 800V 24A 75000mW 3-Pin(3 Tab) ISOWATT218FX Tube
Power Bipolar Transistor, 24A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN High Voltage 800Vceo Max.
Transistor NPN 800V 24A ISOWATT218FX
TRANSISTOR, BJT, NPN, 800V, 24A; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 800V; Transition Frequency ft: -; Power Dissipation Pd: 75W; DC Collector Current: 24A; DC Current Gain hFE: 6.5hFE; Transistor Cas
High Voltage Power Transistor, Npn, 800V, 24A, Isowatt218Fx; Transistor Polarity:Npn; Collector Emitter Voltage Max:800V; Continuous Collector Current:24A; Power Dissipation:75W; Transistor Mounting:Through Hole; No. Of Pins:3Pins Rohs Compliant: Yes |Stmicroelectronics HD1750FX
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