HD1750FX

STMicroelectronics HD1750FX

Part Number:
HD1750FX
Manufacturer:
STMicroelectronics
Ventron No:
2466736-HD1750FX
Description:
TRANS NPN 800V 24A ISOWATT218
ECAD Model:
Datasheet:
HD1750FX

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Specifications
STMicroelectronics HD1750FX technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics HD1750FX.
  • Lifecycle Status
    NRND (Last Updated: 7 months ago)
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    ISOWATT218FX
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • JESD-609 Code
    e3
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    800V
  • Max Power Dissipation
    75W
  • Current Rating
    24A
  • Base Part Number
    HD1750
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    75W
  • Case Connection
    ISOLATED
  • Transistor Application
    AMPLIFIER
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    800V
  • Max Collector Current
    24A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    6.5 @ 12A 5V
  • Current - Collector Cutoff (Max)
    200μA
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 3A, 12A
  • Collector Emitter Breakdown Voltage
    800V
  • Collector Emitter Saturation Voltage
    3V
  • Emitter Base Voltage (VEBO)
    10V
  • hFE Min
    30
  • Height
    26.7mm
  • Length
    15.7mm
  • Width
    5.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
HD1750FX Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 6.5 @ 12A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 3V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 3A, 12A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is 24A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 24A volts.

HD1750FX Features
the DC current gain for this device is 6.5 @ 12A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 3A, 12A
the emitter base voltage is kept at 10V
the current rating of this device is 24A


HD1750FX Applications
There are a lot of STMicroelectronics
HD1750FX applications of single BJT transistors.


Inverter
Interface
Driver
Muting
HD1750FX More Descriptions
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Bipolar Transistors - BJT NPN High Voltage 800Vceo Max.
Transistor NPN 800V 24A ISOWATT218FX
TRANSISTOR, BJT, NPN, 800V, 24A; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 800V; Transition Frequency ft: -; Power Dissipation Pd: 75W; DC Collector Current: 24A; DC Current Gain hFE: 6.5hFE; Transistor Cas
High Voltage Power Transistor, Npn, 800V, 24A, Isowatt218Fx; Transistor Polarity:Npn; Collector Emitter Voltage Max:800V; Continuous Collector Current:24A; Power Dissipation:75W; Transistor Mounting:Through Hole; No. Of Pins:3Pins Rohs Compliant: Yes |Stmicroelectronics HD1750FX
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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