Diodes Incorporated FZT956TA
- Part Number:
- FZT956TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2463462-FZT956TA
- Description:
- TRANS PNP 200V 2A SOT-223
- Datasheet:
- FZT956TA
Diodes Incorporated FZT956TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FZT956TA.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-200V
- Max Power Dissipation3W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-2A
- Frequency110MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFZT956
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation3W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product110MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)200V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A 5V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic370mV @ 300mA, 3A
- Collector Emitter Breakdown Voltage200V
- Transition Frequency110MHz
- Collector Emitter Saturation Voltage-275mV
- Max Breakdown Voltage200V
- Collector Base Voltage (VCBO)220V
- Emitter Base Voltage (VEBO)-7V
- Continuous Collector Current-2A
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FZT956TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1A 5V.The collector emitter saturation voltage is -275mV, which allows for maximum design flexibility.When VCE saturation is 370mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -2A for high efficiency.Emitter base voltages of -7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -2A.In the part, the transition frequency is 110MHz.This device can take an input voltage of 200V volts before it breaks down.A maximum collector current of 2A volts can be achieved.
FZT956TA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -275mV
the vce saturation(Max) is 370mV @ 300mA, 3A
the emitter base voltage is kept at -7V
the current rating of this device is -2A
a transition frequency of 110MHz
FZT956TA Applications
There are a lot of Diodes Incorporated
FZT956TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1A 5V.The collector emitter saturation voltage is -275mV, which allows for maximum design flexibility.When VCE saturation is 370mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -2A for high efficiency.Emitter base voltages of -7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -2A.In the part, the transition frequency is 110MHz.This device can take an input voltage of 200V volts before it breaks down.A maximum collector current of 2A volts can be achieved.
FZT956TA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -275mV
the vce saturation(Max) is 370mV @ 300mA, 3A
the emitter base voltage is kept at -7V
the current rating of this device is -2A
a transition frequency of 110MHz
FZT956TA Applications
There are a lot of Diodes Incorporated
FZT956TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FZT956TA More Descriptions
Power Bipolar Transistor, 2A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
FZT956 Series PNP 2 A 200 V SMT Silicon High Performance Transistor - SOT-223
Trans GP BJT PNP 200V 2A 3000mW 4-Pin(3 Tab) SOT-223 T/R
Trans, Pnp, 200V, 2A, 150Deg C, 3W Rohs Compliant: Yes |Diodes Inc. FZT956TA
Bipolar Transistors - BJT PNP High Current
FZT956 Series PNP 2 A 200 V SMT Silicon High Performance Transistor - SOT-223
Trans GP BJT PNP 200V 2A 3000mW 4-Pin(3 Tab) SOT-223 T/R
Trans, Pnp, 200V, 2A, 150Deg C, 3W Rohs Compliant: Yes |Diodes Inc. FZT956TA
Bipolar Transistors - BJT PNP High Current
The three parts on the right have similar specifications to FZT956TA.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeHTS CodeJESD-30 CodeQualification StatusCurrent - Collector (Ic) (Max)Reach Compliance CodeConfigurationFactory Lead TimeView Compare
-
FZT956TASurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)Other Transistors-200V3WDUALGULL WING260-2A110MHz40FZT9561Single3WCOLLECTORSWITCHING110MHzPNPPNP200V2A100 @ 1A 5V50nA ICBO370mV @ 300mA, 3A200V110MHz-275mV200V220V-7V-2A1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free--------
-
Surface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3-Obsolete1 (Unlimited)4EAR99MATTE TIN--12V3WDUALGULL WING260-6A-40FZT9681Single-COLLECTORSWITCHING80MHzPNPPNP450mV6A300 @ 500mA 1V10nA ICBO450mV @ 250mA, 6A12V80MHz-360mV--15V-6V-6A1.65mm6.7mm3.7mmNo SVHC-RoHS CompliantLead Free8541.29.00.75R-PDSO-G4Not Qualified6A---
-
Surface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3-Obsolete1 (Unlimited)4EAR99MATTE TIN--400V3WDUALGULL WING260-500mA-40FZT9581--COLLECTORSWITCHING85MHzPNPPNP240mV500mA100 @ 500mA 10V50nA ICBO240mV @ 300mA, 1A400V85MHz---400V-6V-500mA---No SVHC-RoHS CompliantLead Free8541.29.00.75R-PDSO-G4Not Qualified500mAunknownSINGLE-
-
Surface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)--60V3WDUALGULL WING260-5A120MHz40FZT9511Single3WCOLLECTORSWITCHING120MHzPNPPNP60V5A100 @ 2A 1V50nA ICBO460mV @ 500mA, 5A60V120MHz-370mV-100V-7V-1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free------15 Weeks
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
21 December 2023
Exploring the PC817 Optocoupler: Working Principle, Package, Manufacturer and More
Ⅰ. What is PC817 optocoupler?Ⅱ. How PC817 optocoupler works?Ⅲ. Where can we use PC817 optocoupler?Ⅳ. PC817 optocoupler packageⅤ. How to measure the quality of PC817?Ⅵ. Manufacturer of PC817... -
22 December 2023
STM32F429IGT6 Microcontroller: Feature-Rich Embedded System Design
Ⅰ. What is STM32F429IGT6?Ⅱ. Application fields of STM32F429IGT6Ⅲ. Naming rules of STM32F429IGT6Ⅳ. Precautions for using STM32F429IGT6Ⅴ. STM32F429IGT6 characteristicsⅥ. Power supply diagram of STM32F429IGT6Ⅶ. Specifications of STM32F429IGT6Ⅷ. How to... -
22 December 2023
SS8050 NPN Epitaxial Silicon Transistor: Ideal for Small Power Amplification and Switching Applications
Ⅰ. Introduction of SS8050Ⅱ. Technical parameters of SS8050 transistorⅢ. NPN-type transistor and PNP-type transistorⅣ. How to use SS8050 transistor?Ⅴ. Electrical characteristics of SS8050 transistorⅥ. What is the difference... -
25 December 2023
N76E003AT20 Microcontroller: The Intelligent Engine of Embedded Systems
Ⅰ. What is N76E003AT20?Ⅱ. Characteristics of N76E003AT20 microcontrollerⅢ. N76E003AT20 dimension and packageⅣ. Operating modesⅤ. Who produces N76E003AT20 microcontroller?Ⅵ. N76E003AT20 microcontroller specificationsⅦ. What are the uses of N76E003AT20 microcontroller?Ⅷ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.