Diodes Incorporated FZT955TA
- Part Number:
- FZT955TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2462779-FZT955TA
- Description:
- TRANS PNP 140V 4A SOT-223
- Datasheet:
- FZT955TA
Diodes Incorporated FZT955TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FZT955TA.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published1997
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-140V
- Max Power Dissipation3W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-4A
- Frequency110MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFZT955
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation3W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product110MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)140V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A 5V
- Current - Collector Cutoff (Max)50nA ICBO
- Vce Saturation (Max) @ Ib, Ic370mV @ 300mA, 3A
- Collector Emitter Breakdown Voltage140V
- Transition Frequency110MHz
- Collector Emitter Saturation Voltage-370mV
- Max Breakdown Voltage140V
- Collector Base Voltage (VCBO)180V
- Emitter Base Voltage (VEBO)6V
- Continuous Collector Current-4A
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FZT955TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1A 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -370mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 370mV @ 300mA, 3A.Single BJT transistor is recommended to keep the continuous collector voltage at -4A in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 110MHz.The breakdown input voltage is 140V volts.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
FZT955TA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -370mV
the vce saturation(Max) is 370mV @ 300mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is -4A
a transition frequency of 110MHz
FZT955TA Applications
There are a lot of Diodes Incorporated
FZT955TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1A 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -370mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 370mV @ 300mA, 3A.Single BJT transistor is recommended to keep the continuous collector voltage at -4A in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 110MHz.The breakdown input voltage is 140V volts.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
FZT955TA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -370mV
the vce saturation(Max) is 370mV @ 300mA, 3A
the emitter base voltage is kept at 6V
the current rating of this device is -4A
a transition frequency of 110MHz
FZT955TA Applications
There are a lot of Diodes Incorporated
FZT955TA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FZT955TA More Descriptions
Power Bipolar Transistor, 4A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
140V 3W 100@1A,5V 4A PNP SOT-223 Bipolar Transistors - BJT ROHS
FZT955 Series PNP 4 A 140 V SMT Silicon High Performance Transistor - SOT-223
Trans GP BJT PNP 140V 4A 3000mW 4-Pin(3 Tab) SOT-223 T/R
Trans, Pnp, 140V, 4A, 150Deg C, 3W Rohs Compliant: Yes |Diodes Inc. FZT955TA
140V 3W 100@1A,5V 4A PNP SOT-223 Bipolar Transistors - BJT ROHS
FZT955 Series PNP 4 A 140 V SMT Silicon High Performance Transistor - SOT-223
Trans GP BJT PNP 140V 4A 3000mW 4-Pin(3 Tab) SOT-223 T/R
Trans, Pnp, 140V, 4A, 150Deg C, 3W Rohs Compliant: Yes |Diodes Inc. FZT955TA
The three parts on the right have similar specifications to FZT955TA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeHTS CodeJESD-30 CodeQualification StatusCurrent - Collector (Ic) (Max)View Compare
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FZT955TA14 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJCut Tape (CT)1997e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)Other Transistors-140V3WDUALGULL WING260-4A110MHz40FZT9551Single3WCOLLECTORSWITCHING110MHzPNPPNP140V4A100 @ 1A 5V50nA ICBO370mV @ 300mA, 3A140V110MHz-370mV140V180V6V-4A1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free-----
-
-Surface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3-Obsolete1 (Unlimited)4EAR99MATTE TIN--12V3WDUALGULL WING260-6A-40FZT9681Single-COLLECTORSWITCHING80MHzPNPPNP450mV6A300 @ 500mA 1V10nA ICBO450mV @ 250mA, 6A12V80MHz-360mV--15V-6V-6A1.65mm6.7mm3.7mmNo SVHC-RoHS CompliantLead Free8541.29.00.75R-PDSO-G4Not Qualified6A
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15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJCut Tape (CT)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)Other Transistors-12V3WDUALGULL WING260-6A80MHz40FZT9681Single3WCOLLECTORSWITCHING80MHzPNPPNP12V6A300 @ 500mA 1V10nA ICBO450mV @ 250mA, 6A12V80MHz-360mV12V15V-6V-6A1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free----
-
15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)--60V3WDUALGULL WING260-5A120MHz40FZT9511Single3WCOLLECTORSWITCHING120MHzPNPPNP60V5A100 @ 2A 1V50nA ICBO460mV @ 500mA, 5A60V120MHz-370mV-100V-7V-1.65mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free----
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