Diodes Incorporated FZT1149ATA
- Part Number:
- FZT1149ATA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2464057-FZT1149ATA
- Description:
- TRANS PNP 25V 4A SOT-223
- Datasheet:
- FZT1149ATA
Diodes Incorporated FZT1149ATA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FZT1149ATA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Voltage - Rated DC-25V
- Max Power Dissipation2.5W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Current Rating-4A
- Frequency135MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFZT1149A
- Pin Count4
- Qualification StatusNot Qualified
- Number of Elements1
- Voltage25V
- Element ConfigurationSingle
- Current4A
- Power Dissipation2.5W
- Case ConnectionCOLLECTOR
- Gain Bandwidth Product135MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)25V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 500mA 2V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic350mV @ 140mA, 4A
- Collector Emitter Breakdown Voltage25V
- Transition Frequency135MHz
- Collector Emitter Saturation Voltage-230mV
- Max Breakdown Voltage25V
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)5V
- Continuous Collector Current-4A
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FZT1149ATA Overview
In this device, the DC current gain is 250 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -230mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 140mA, 4A.Maintaining the continuous collector voltage at -4A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4A).135MHz is present in the transition frequency.An input voltage of 25V volts is the breakdown voltage.Maximum collector currents can be below 4A volts.
FZT1149ATA Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of -230mV
the vce saturation(Max) is 350mV @ 140mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 135MHz
FZT1149ATA Applications
There are a lot of Diodes Incorporated
FZT1149ATA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 250 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -230mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 140mA, 4A.Maintaining the continuous collector voltage at -4A is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4A).135MHz is present in the transition frequency.An input voltage of 25V volts is the breakdown voltage.Maximum collector currents can be below 4A volts.
FZT1149ATA Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of -230mV
the vce saturation(Max) is 350mV @ 140mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 135MHz
FZT1149ATA Applications
There are a lot of Diodes Incorporated
FZT1149ATA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FZT1149ATA More Descriptions
Power Bipolar Transistor, 4A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
Trans GP BJT PNP 25V 4A 3000mW 4-Pin(3 Tab) SOT-223 T/R
FZT1149A Series 25 V 4 A PNP Silicon Planar Medium Power Transistor - SOT-223-3
PNP high gain TX SOT223, FZT1149ATA | Diodes Inc FZT1149ATA
Trans GP BJT PNP 25V 4A 3000mW 4-Pin(3 Tab) SOT-223 T/R
FZT1149A Series 25 V 4 A PNP Silicon Planar Medium Power Transistor - SOT-223-3
PNP high gain TX SOT223, FZT1149ATA | Diodes Inc FZT1149ATA
The three parts on the right have similar specifications to FZT1149ATA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsVoltageElement ConfigurationCurrentPower DissipationCase ConnectionGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)Continuous Collector CurrentHeightLengthWidthREACH SVHCRoHS StatusLead FreeTerminationSubcategoryJESD-30 CodeTransistor ApplicationhFE MinHTS CodeConfigurationRadiation HardeningView Compare
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FZT1149ATA15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)-25V2.5WDUALGULL WING260not_compliant-4A135MHz40FZT1149A4Not Qualified125VSingle4A2.5WCOLLECTOR135MHzPNPPNP25V4A250 @ 500mA 2V100nA350mV @ 140mA, 4A25V135MHz-230mV25V30V5V-4A1.65mm6.7mm3.7mmNo SVHCROHS3 CompliantLead Free---------
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15 WeeksSurface MountSurface MountTO-261-4, TO-261AA37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2001e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)75V2.5WDUALGULL WING260not_compliant4.5A140MHz40FZT1053A4Not Qualified1-Single-2.5WCOLLECTOR140MHzNPNNPN75V4.5A300 @ 500mA 2V10nA440mV @ 200mA, 4.5A75V140MHz440mV75V150V7.5V4.5A1.65mm6.7mm3.7mmNo SVHCROHS3 CompliantLead FreeSMD/SMTOther TransistorsR-PDSO-G4SWITCHING300---
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-Surface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3-Obsolete1 (Unlimited)4EAR99MATTE TIN10V2.5WDUALGULL WING260unknown5A-40FZT1047A4Not Qualified1----COLLECTOR150MHzNPNNPN350mV5A300 @ 1A 2V10nA350mV @ 25mA, 5A10V150MHz--35V5V5A----RoHS CompliantLead Free--R-PDSO-G4SWITCHING-8541.29.00.75SINGLE-
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15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3noActive1 (Unlimited)4EAR99Matte Tin (Sn)60V2.5WDUALGULL WING260-5A155MHz40FZT1051A4-1-Single-2.5WCOLLECTOR155MHzNPNNPN40V5A270 @ 1A 2V10nA340mV @ 100mA, 5A40V155MHz--150V5V5A1.65mm6.7mm3.7mmNo SVHCROHS3 CompliantLead Free---SWITCHING---No
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