Diodes Incorporated FZT1049ATA
- Part Number:
- FZT1049ATA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2462959-FZT1049ATA
- Description:
- TRANS NPN 25V 5A SOT-223
- Datasheet:
- FZT1049ATA
Diodes Incorporated FZT1049ATA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated FZT1049ATA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1997
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- TerminationSMD/SMT
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC30V
- Max Power Dissipation2.5W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Current Rating5A
- Frequency180MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberFZT1049A
- Pin Count4
- JESD-30 CodeR-PDSO-G4
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2.5W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product180MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)25V
- Max Collector Current5A
- DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1A 2V
- Current - Collector Cutoff (Max)10nA
- Vce Saturation (Max) @ Ib, Ic330mV @ 50mA, 5A
- Collector Emitter Breakdown Voltage25V
- Transition Frequency180MHz
- Collector Emitter Saturation Voltage330mV
- Max Breakdown Voltage25V
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- hFE Min300
- Continuous Collector Current5A
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FZT1049ATA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 330mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 330mV @ 50mA, 5A.Continuous collector voltages of 5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 180MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 5A volts.
FZT1049ATA Features
the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of 330mV
the vce saturation(Max) is 330mV @ 50mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 5A
a transition frequency of 180MHz
FZT1049ATA Applications
There are a lot of Diodes Incorporated
FZT1049ATA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 330mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 330mV @ 50mA, 5A.Continuous collector voltages of 5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 180MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 5A volts.
FZT1049ATA Features
the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of 330mV
the vce saturation(Max) is 330mV @ 50mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 5A
a transition frequency of 180MHz
FZT1049ATA Applications
There are a lot of Diodes Incorporated
FZT1049ATA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
FZT1049ATA More Descriptions
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
FZT1049A Series NPN 5 A 30 V SMT Silicon Medium Power Transistor - SOT-223
Trans GP BJT NPN 25V 5A 3000mW 4-Pin(3 Tab) SOT-223 T/R
NPN Transistor,5A,25V, SOT223 | Diodes Inc FZT1049ATA
TRANSISTOR, NPN, REEL 1K; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:30V; Typ Gain Bandwidth ft:180MHz; Power Dissipation Pd:2.5W; DC Collector Current:5A; DC Current Gain hFE:450; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-223; Case Style:SOT-223; Current Ic @ Vce Sat:5A; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Max Current Ic:5A; Max Current Ic Continuous a:5A; Max Power Dissipation Ptot:2.5W; Max Voltage Vce Sat:330mV; Min Hfe:300; No. of Transistors:1; Power Dissipation:2.5W; Pulsed Current Icm:20A; Reel Quantity:1000; SMD Marking:FZT1049A; Tape Width:12mm; Termination Type:SMD; Transistor Type:Bipolar; Voltage Vcbo:80V
FZT1049A Series NPN 5 A 30 V SMT Silicon Medium Power Transistor - SOT-223
Trans GP BJT NPN 25V 5A 3000mW 4-Pin(3 Tab) SOT-223 T/R
NPN Transistor,5A,25V, SOT223 | Diodes Inc FZT1049ATA
TRANSISTOR, NPN, REEL 1K; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:30V; Typ Gain Bandwidth ft:180MHz; Power Dissipation Pd:2.5W; DC Collector Current:5A; DC Current Gain hFE:450; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-223; Case Style:SOT-223; Current Ic @ Vce Sat:5A; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Max Current Ic:5A; Max Current Ic Continuous a:5A; Max Power Dissipation Ptot:2.5W; Max Voltage Vce Sat:330mV; Min Hfe:300; No. of Transistors:1; Power Dissipation:2.5W; Pulsed Current Icm:20A; Reel Quantity:1000; SMD Marking:FZT1049A; Tape Width:12mm; Termination Type:SMD; Transistor Type:Bipolar; Voltage Vcbo:80V
The three parts on the right have similar specifications to FZT1049ATA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRoHS StatusLead FreeHTS CodeConfigurationRadiation HardeningView Compare
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FZT1049ATA15 WeeksSurface MountSurface MountTO-261-4, TO-261AA37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)1997e3noActive1 (Unlimited)4SMD/SMTEAR99Matte Tin (Sn)Other Transistors30V2.5WDUALGULL WING260not_compliant5A180MHz40FZT1049A4R-PDSO-G4Not Qualified1Single2.5WCOLLECTORSWITCHING180MHzNPNNPN25V5A300 @ 1A 2V10nA330mV @ 50mA, 5A25V180MHz330mV25V80V5V3005A1.65mm6.7mm3.7mmNo SVHCROHS3 CompliantLead Free----
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15 WeeksSurface MountSurface MountTO-261-4, TO-261AA37.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2001e3noActive1 (Unlimited)4SMD/SMTEAR99Matte Tin (Sn)Other Transistors75V2.5WDUALGULL WING260not_compliant4.5A140MHz40FZT1053A4R-PDSO-G4Not Qualified1Single2.5WCOLLECTORSWITCHING140MHzNPNNPN75V4.5A300 @ 500mA 2V10nA440mV @ 200mA, 4.5A75V140MHz440mV75V150V7.5V3004.5A1.65mm6.7mm3.7mmNo SVHCROHS3 CompliantLead Free---
-
-Surface MountSurface MountTO-261-4, TO-261AA-7.994566mgSILICON-55°C~150°C TJTape & Reel (TR)-e3-Obsolete1 (Unlimited)4-EAR99Matte Tin (Sn)-17.5V2.5WDUALGULL WING260-5A-40FZT1048A4R-PDSO-G4Not Qualified1--COLLECTORSWITCHING150MHzNPNNPN350mV5A300 @ 1A 2V10nA350mV @ 25mA, 5A17.5V150MHz--50V5V-5A---No SVHCRoHS CompliantLead Free8541.29.00.75SINGLE-
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15 WeeksSurface MountSurface MountTO-261-4, TO-261AA47.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3noActive1 (Unlimited)4-EAR99Matte Tin (Sn)-60V2.5WDUALGULL WING260-5A155MHz40FZT1051A4--1Single2.5WCOLLECTORSWITCHING155MHzNPNNPN40V5A270 @ 1A 2V10nA340mV @ 100mA, 5A40V155MHz--150V5V-5A1.65mm6.7mm3.7mmNo SVHCROHS3 CompliantLead Free--No
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