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FSB660A

Fairchild/ON Semiconductor FSB660A

Part Number:
FSB660A
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2463063-FSB660A
Description:
TRANS PNP 60V 2A SSOT-3
ECAD Model:
Datasheet:
FSB660A

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Specifications
Fairchild/ON Semiconductor FSB660A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FSB660A.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    20 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    30mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2017
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -60V
  • Max Power Dissipation
    500mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    -2A
  • Frequency
    75MHz
  • Base Part Number
    FSB660
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    500mW
  • Gain Bandwidth Product
    75MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    2A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    250 @ 500mA 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 200mA, 2A
  • Collector Emitter Breakdown Voltage
    60V
  • Transition Frequency
    75MHz
  • Collector Emitter Saturation Voltage
    300mV
  • Max Breakdown Voltage
    60V
  • Collector Base Voltage (VCBO)
    -60V
  • Emitter Base Voltage (VEBO)
    -5V
  • hFE Min
    250
  • Height
    940μm
  • Length
    2.92mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FSB660A Overview
This device has a DC current gain of 250 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 2A volts is possible.

FSB660A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz


FSB660A Applications
There are a lot of ON Semiconductor
FSB660A applications of single BJT transistors.


Inverter
Interface
Driver
Muting
FSB660A More Descriptions
Bipolar Transistors - BJT PNP Transistor Low Saturation
Trans GP BJT PNP 60V 2A 500mW 3-Pin SOT-23 T/R / TRANS PNP 60V 2A SSOT-3
FSB660A Series 60 V 500 mW PNP Low Saturation Transistor - SuperSOT-3
Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
Transistor, BIPOL, PNP, -60V, SOT-23-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:75MHz; Power
These devices are designed with high current gain and low saturation voltage with collector currents up to 2 A continuous.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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