FPF2G120BF07AS

Fairchild/ON Semiconductor FPF2G120BF07AS

Part Number:
FPF2G120BF07AS
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2493277-FPF2G120BF07AS
Description:
IC LOAD SWITCH
ECAD Model:
Datasheet:
FPF2G120BF07AS

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Specifications
Fairchild/ON Semiconductor FPF2G120BF07AS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FPF2G120BF07AS.
  • Factory Lead Time
    7 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    Module
  • Number of Pins
    17
  • Weight
    45g
  • Operating Temperature
    -40°C~150°C TJ
  • Published
    2014
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • HTS Code
    8542.39.00.01
  • Max Power Dissipation
    156W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Configuration
    3 Independent
  • Power - Max
    156W
  • Input
    Standard
  • Collector Emitter Voltage (VCEO)
    2.2V
  • Max Collector Current
    40A
  • Current - Collector Cutoff (Max)
    250μA
  • Collector Emitter Breakdown Voltage
    650V
  • Isolation Voltage
    2.5kV
  • Vce(on) (Max) @ Vge, Ic
    2.2V @ 15V, 40A
  • IGBT Type
    Field Stop
  • NTC Thermistor
    Yes
  • RoHS Status
    ROHS3 Compliant
Description
FPF2G120BF07AS Description
FPF2G120BF07AS belongs to the family of 3ch boost modules with NTC. The 3ch boost topology is specifically designed to provide an optimized solution for multi-string solar applications. The integrated high-speed field stop IGBTs and SiC diodes are able to deliver lower conduction and switching losses. A fast and reliable mounting method is provided by the screw clamp.

FPF2G120BF07AS Features
Low conduction losses Low switching losses High efficiency High-speed field stop IGBT Fast and reliable mounting method

FPF2G120BF07AS Applications
Solar inverter
FPF2G120BF07AS More Descriptions
Power Integrated Module (PIM), F2, SiC Diode IGBT, 650 V, 40 A
Trans IGBT Module N=-CH 650V 40A 156000mW 17-Pin Case F2 Tray
HPM(High Power Module) - HPM F2 PKG, 32LD, SOLDERING TERMINAL, 3CH BOOST MODULE
Insulated Gate Bipolar Transistor, 40A I(C), 650V V(BR)CES, N-Channel
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
IGBT Modules High Power Module
The FPF2G120BF07AS is the 3ch boost topology which is providing an optimized solution for the multi-string solar application.And the integrated high speed field stop IGBTs and SiC diodes are providing lower conduction and switching losses. Furthermore, the screw clamp provides a fast and reliable mounting method.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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